Abstract: An interconnect structure on a semiconductor die includes: a lower conductive layer; an upper conductive layer disposed above the lower conductive layer; and a VIA disposed between the lower conductive layer and the upper conductive layer. The VIA includes: a primary interconnect structure and a sacrificial stress barrier ring disposed around the primary interconnect structure and separated a distance from the primary interconnect structure. A fabrication method for the interconnect structure includes: forming a dielectric layer over a lower conductive layer; patterning photoresist (PR) layer over the dielectric layer to define a location for a plurality of VIA trenches, wherein the patterning includes patterning the PR layer to provide a center opening for the VIA trenches that is surrounded by a ring opening for the VIA trenches, wherein the center opening and the ring opening are spaced apart.

Abstract: An electric motor has a stator comprising a plurality of permanent magnets disposed on an interior surface of the stator and an armature comprising a plurality of pole segments equally spaced apart on a shaft. Each pole segment is wound with a coil, which is powered to induce a magnetic field to interact with one of the permanent magnets in the stator. Four of the armature coils provide magnetized poles to interact with the plurality of poles of the stator at a time, to produce a powerful torque for rotating the armature.