Abstract: An E-paper display panel including an E-paper display layer, a first substrate, a pixel array layer, a common electrode layer, and a driving circuit is provided. The first substrate is disposed at a first side of the E-paper display layer. The pixel array substrate is disposed between the first substrate and the E-paper display layer and includes touch electrodes and driving pixels arranged in an array. Each driving pixel includes a first pixel electrode and a second pixel electrode. The touch electrodes, the first pixel electrode, and the second pixel electrode are overlapped with each other. The common electrode layer is disposed at a second side of the E-paper display layer. The first side is opposite to the second side. The driving circuit is in signal communication with the common electrode layer and the pixel array layer. The touch electrodes are individually in signal communication with the driving circuit.

Abstract: Provided is a memory device including a substrate, a plurality of word-line structures, a plurality of cap structures, and a plurality of air gaps. The word-line structures are disposed on the substrate. The cap structures are respectively disposed on the word-line structures. A material of the cap structures includes a nitride. The nitride has a nitrogen concentration decreasing along a direction near to a corresponding word-line structure toward far away from the corresponding word-line structure. The air gaps are respectively disposed between the word-line structures. The air gaps are in direct contact with the word-line structures. A method of forming a memory device is also provided.

Abstract: Provided is a memory device including a substrate, a plurality of word-line structures, a plurality of cap structures, and a plurality of air gaps. The word-line structures are disposed on the substrate. The cap structures are respectively disposed on the word-line structures. A material of the cap structures includes a nitride. The nitride has a nitrogen concentration decreasing along a direction near to a corresponding word-line structure toward far away from the corresponding word-line structure. The air gaps are respectively disposed between the word-line structures. The air gaps are in direct contact with the word-line structures. A method of forming a memory device is also provided.

Abstract: Provided is a memory device including a substrate, a plurality of word-line structures, a plurality of cap structures, and a plurality of air gaps. The word-line structures are disposed on the substrate. The cap structures are respectively disposed on the word-line structures. A material of the cap structures includes a nitride. The nitride has a nitrogen concentration decreasing along a direction near to a corresponding word-line structure toward far away from the corresponding word-line structure. The air gaps are respectively disposed between the word-line structures. The air gaps are in direct contact with the word-line structures. A method of forming a memory device is also provided.

Abstract: Provided is a memory device including a substrate, a plurality of word-line structures, a plurality of cap structures, and a plurality of air gaps. The word-line structures are disposed on the substrate. The cap structures are respectively disposed on the word-line structures. A material of the cap structures includes a nitride. The nitride has a nitrogen concentration decreasing along a direction near to a corresponding word-line structure toward far away from the corresponding word-line structure. The air gaps are respectively disposed between the word-line structures. The air gaps are in direct contact with the word-line structures. A method of forming a memory device is also provided.

Abstract: A memory device and a manufacturing method of the memory device are provided. The manufacturing method includes steps below. A plurality of stack structures including a tunneling dielectric layer and a floating gate are formed on a substrate. A liner material layer including a nitride liner layer is formed on the substrate. A top surface of the nitride liner layer is lower than a top surface of the floating gate and is higher than a top surface of the tunneling dielectric layer. An isolation material layer covering the liner material layer is formed on the substrate. The isolation material layer is oxidized, and a portion of the isolation material layer is removed to form an isolation structure. An inter-gate dielectric layer covering the stack structures and the isolation structure is formed on the substrate. A control gate covering the inter-gate dielectric layer is formed on the substrate.

Abstract: A method of manufacturing a semiconductor device, which includes the steps of forming a gate stack structure made up of a floating gate, an inter-poly dielectric, a control gate and a metal layer on a substrate, forming a conformal liner on the gate stack structure, covering a mask layer on the liner, where the mask layer is lower than the metal layer so that a portion of the liner is exposed, and performing a nitridation treatment to transform the exposed liner into a nitrided liner, so that at least the portion of the metal layer in the gate stack structure is covered by the nitrided liner.

Abstract: A method of manufacturing a semiconductor device, which includes the steps of forming a gate stack structure made up of a floating gate, an inter-poly dielectric, a control gate and a metal layer on a substrate, forming a conformal liner on the gate stack structure, covering a mask layer on the liner, where the mask layer is lower than the metal layer so that a portion of the liner is exposed, and performing a nitridation treatment to transform the exposed liner into a nitrided liner, so that at least the portion of the metal layer in the gate stack structure is covered by the nitrided liner.