Abstract: A method for forming a three-dimensional memory device includes disposing a material layer over a substrate, forming a plurality of channel-forming holes and a plurality of sacrificial holes around the plurality of channel-forming holes in an array-forming region of the material layer, and forming a plurality of semiconductor channels based on the channel-forming holes and at least one gate line slit (GLS) based on at least one of the plurality of sacrificial holes. A location of the at least one GLS overlaps with the at least one of the plurality of sacrificial holes.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.

Abstract: A mask frame, comprises a central conduit connection aperture and lateral arms having a 3-D curvature. The lateral arms extend: outwardly from a center of the frame, rearwardly, towards the patients ears, and upwardly, along a vector passing from below the nose to a point between the temple the top of the ear. The lateral arms “twist” along their length, such that a bottom margin of an end of each lateral arm is positioned further away from a notional vertical plane passing through the centre of the conduit connection aperture than a top margin. Also provided is an anti-rotation feature which limits or prevents rotation between straps of a headgear, and the mask frame. Further provided is a buckle for a closed loop headgear the buckle being formed with a plurality of openings and posts configured to form an angled headgear strap path through the buckle through which part of a headgear strap loop can pass.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.

Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.

Abstract: A computer implemented method, computer system and computer program product are provided for lost detection for paired mobile devices. According to the method, a processor receives behavior data of paired mobile devices from one or more sensors of the paired mobile devices, wherein the behavior data comprising one or more parameters that reflect current status of the paired mobile devices. And the processor compares the received behavior data with human behavior data model. And, in response to the received behavior data being not matched with the human behavior data model, the processor determines that at least one of the paired mobile devices is lost.

Abstract: A mask assembly including a mask frame with a central conduit connection aperture and lateral arms having a 3-D curvature. The lateral arms extend: outwardly from a center of the frame, rearwardly, towards the patients ears, and upwardly, along a vector passing from below the nose to a point between the temple the top of the ear. The mask assembly can include an anti-rotation feature which limits or prevents rotation between straps of a headgear, and the mask frame. The mask assembly can include a buckle for a closed loop headgear, the buckle being formed with a plurality of openings and posts configured to form an angled headgear strap path through the buckle through which part of a headgear strap loop can pass.

Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.

Abstract: A patient interface includes a frame, an inflatable seal, and a deformable insert. The frame includes an outer portion, an inner portion, and an opening extending therebetween. The inflatable seal is secured to the inner portion of the frame. The inflatable seal defines an internal volume and has at least one aperture. The deformable insert includes an outer surface, an inner surface and a passageway extending therebetween. The deformable insert is positioned within the internal volume of the seal and aligned with at least a portion of the frame inner portion. The passageway is aligned with the frame opening to define a gas flow path from the frame outer portion to the at least one aperture of the seal.

Abstract: A ballooning patient interface has a frame that supports a sealing member. The frame and/or the sealing member is secured to the head of a user with headgear, such as a strap. Various features of the sealing member improve comfort for the user in the nares of the users as well as on facial surfaces in contact with the sealing member.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.

Abstract: Embodiments of 3D memory devices and fabricating methods are disclosed. The disclosed 3D memory device comprises: an alternating conductor/dielectric stack on a substrate; a channel hole penetrating the alternating dielectric stack; an epitaxial layer on a bottom of the channel hole and in contact with the substrate; a functional layer covering a sidewall of the channel hole; and a channel structure covering the functional layer, and being in electrical contact with the epitaxial layer through a top surface of the epitaxial layer as well as a sidewall and a bottom surface of a recess in the epitaxial layer.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.

Abstract: A patient interface includes a frame, an inflatable seal, and a deformable insert. The frame includes an outer portion, an inner portion, and an opening extending therebetween. The inflatable seal is secured to the inner portion of the frame. The inflatable seal defines an internal volume and has at least one aperture. The deformable insert includes an outer surface, an inner surface and a passageway extending therebetween. The deformable insert is positioned within the internal volume of the seal and aligned with at least a portion of the frame inner portion. The passageway is aligned with the frame opening to define a gas flow path from the frame outer portion to the at least one aperture of the seal.

Abstract: A ballooning patient interface has a frame that supports a sealing member. The frame and/or the sealing member is secured to the head of a user with headgear, such as a strap. Various features of the sealing member improve comfort for the user in the nares of the users as well as on facial surfaces in contact with the sealing member.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.

Abstract: Embodiments of 3D memory devices and fabricating methods are disclosed. The method can comprise: forming an alternating dielectric stack on a substrate; forming a channel hole penetrating the alternating dielectric stack to expose a surface of the substrate; forming an epitaxial layer on a bottom of the channel hole; forming a functional layer covering a sidewall of the channel hole and a top surface of the epitaxial layer; forming a protecting layer covering the functional layer; removing portions of the functional layer and the protecting layer to form an opening to expose a surface of the epitaxial layer; expanding the opening laterally to increase an exposed area of the epitaxial layer at the bottom of the channel hole; and forming a channel structure on the sidewall of the channel hole and being in electrical contact with the epitaxial layer through the expanded opening.

Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.