Patents by Inventor Wen-Feng Hsieh

Wen-Feng Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Titanium dioxide film co-doped with yttrium and erbium and method for producing the same
    Patent number: 6602338
    Abstract: A precursor composition of TiO2 doped with erbium (Er) and yttrium (Y) for forming a film used in a planar optical waveguide amplifier. The precursor composition includes 100 mol % TiO2 precursor compound, about 0.1-10 mol % erbium ion (Er3+) precursor compound, and about 1-50 mol % yttrium ion (Y3+) precursor compound, thereby forming a doped TiO2 film co-doped with erbium and yttrium an amorphous structure to achieve the enhancing effect on photoluminescence properties.
    Type: Grant
    Filed: April 11, 2001
    Date of Patent: August 5, 2003
    Assignee: National Science Council
    Inventors: San-Yuan Chen, Wen-Feng Hsieh, Chu-Chi Ting
  • Titanium dioxide film co-doped with yttrium and erbium and method for procucing the same
    Publication number: 20020056831
    Abstract: A doped TiO2 material for forming a film used in a planar optical waveguide amplifier. The doped TiO2 material includes 100 mol % TiO2 precursor compound, 0.1˜10 mol % erbium ion (Er3+) precursor compound, and 1˜50 mol % yttrium ion (Y3+) precursor compound, thereby forming the doped TiO2 film co-doped with erbium and yttrium as an amorphous structure to achieve the enhancing effect on photoluminescence properties.
    Type: Application
    Filed: April 11, 2001
    Publication date: May 16, 2002
    Inventors: San-Yuan Chen, Wen-Feng Hsieh, Chu-Chi Ting