Abstract: An independent graphics card system comprises an expansion motherboard, a system power supply, at least one expansion graphics card and a fan assembly. The system power supply is electrically connected to the expansion motherboard. The at least one expansion graphics card is plugged into the expansion motherboard through an adapter card. The at least one expansion graphics card is parallel with the expansion motherboard. The fan assembly dissipates heat of the at least one expansion graphics card.

Abstract: A thermally conductive board includes a first metal layer, a second metal layer, and a thermally conductive layer. The material of the first metal layer includes copper, and the first metal layer has a first top surface and a first bottom surface opposite to the first top surface. A first metal coating layer covers the first bottom surface. The material of the second metal layer includes copper, and the second metal layer has a second top surface and a second bottom surface opposite to the second top surface. A second metal coating layer covers the second top surface and faces the first metal coating layer. The thermally conductive layer is an electrically insulator laminated between the first metal coating layer and the second metal coating layer.

Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

Abstract: An insulated metal substrate (IMS) and a method for manufacturing the same are disclosed. The IMS includes an electrically conductive line pattern layer, an encapsulation layer, a first adhesive layer, a second adhesive layer, and a heat sink element. The encapsulation layer fills a gap between a plurality of electrically conductive lines of the electrically conductive line pattern layer. An upper surface of the encapsulation layer is flush with an upper surface of the electrically conductive line pattern layer. The first and second adhesive layer are disposed between the electrically conductive line pattern layer and the heat sink element. A bonding strength between the first adhesive layer and the second adhesive layer is greater than 80 kg/cm2.

Abstract: An insulated metal substrate (IMS) and a method for manufacturing the same are disclosed. The IMS includes an electrically conductive line pattern layer, an encapsulation layer, a first adhesive layer, a second adhesive layer, and a heat sink element. The encapsulation layer fills a gap between a plurality of electrically conductive lines of the electrically conductive line pattern layer. An upper surface of the encapsulation layer is flush with an upper surface of the electrically conductive line pattern layer. The first and second adhesive layer are disposed between the electrically conductive line pattern layer and the heat sink element. A bonding strength between the first adhesive layer and the second adhesive layer is greater than 80 kg/cm2.

Abstract: An insulated metal substrate (IMS) and a method for manufacturing the same are disclosed. The IMS includes an electrically conductive line pattern layer, an encapsulation layer, a first adhesive layer, a second adhesive layer, and a heat sink element. The encapsulation layer fills a gap between a plurality of electrically conductive lines of the electrically conductive line pattern layer. An upper surface of the encapsulation layer is flush with an upper surface of the electrically conductive line pattern layer. The first and second adhesive layer are disposed between the electrically conductive line pattern layer and the heat sink element. A bonding strength between the first adhesive layer and the second adhesive layer is greater than 80 kg/cm2.

Abstract: A PTC device comprises a laminated substrate, a first PTC material layer, a second PTC material layer, a first metal layer and a second metal layer. The laminated substrate comprises a first conductive layer, a second conductive layer and an insulating layer laminated between the first and second conductive layers. The first PTC material layer is disposed on the first conductive layer, and the second PTC material layer is disposed on the second conductive layer. The first metal layer is disposed on the first PTC material layer, and the second metal layer is disposed on the second PTC material layer. The insulating layer has a through hole filled with PTC material to form a PTC connecting member of which one end connects to the first PTC material layer and another end connects to the second PTC material layer.

Abstract: A PTC device comprises a current and temperature sensing element, a first insulating layer, a second insulating layer, a first electrode layer and a second electrode layer. The current and temperature sensing device is a laminated structure comprising a first conductive layer, a second conductive layer and a PTC material layer. The first and second conductive layers are disposed on first and second surfaces of the PTC material layer, respectively. The second surface is opposite to the first surface. The first and second insulating layers are disposed on the first and second conductive layers, respectively. The first electrode layer is disposed on the first insulating layer and electrically connects to the first conductive layer. The second electrode layer is disposed on the second insulating layer and electrically connects to the second conductive layer. Corners of the current and temperature sensing device are provided with insulating members.

Abstract: A PTC device comprises a current and temperature sensing element, a first insulating layer, a second insulating layer, a first electrode layer and a second electrode layer. The current and temperature sensing device is a laminated structure comprising a first conductive layer, a second conductive layer and a PTC material layer. The first and second conductive layers are disposed on first and second surfaces of the PTC material layer, respectively. The second surface is opposite to the first surface. The first and second insulating layers are disposed on the first and second conductive layers, respectively. The first electrode layer is disposed on the first insulating layer and electrically connects to the first conductive layer. The second electrode layer is disposed on the second insulating layer and electrically connects to the second conductive layer. Corners of the current and temperature sensing device are provided with insulating members.

Abstract: A surface mountable over-current protection device comprises a PTC material layer, first and second conductive layers, left and right electrodes, left and right conductive members, and left and right insulating members. The PTC material layer comprises a left notch at a left end and a right notch at a right end. The first conductive layer comprises a primary portion disposed on an upper surface of the PTC material layer and a secondary portion extending over the left notch, and the second conductive layer comprises a primary portion disposed on a lower surface of the PTC material layer and a secondary portion extending over the underside of the right notch. The left conductive member connects to the left electrode and the first conductive layer and isolates from the second conductive layer. The right conductive member connects to the right electrode and the second conductive layer and isolates from the first conductive layer.

Abstract: A surface mountable over-current protection device comprises a PTC material layer, first and second conductive layers, left and right electrodes, left and right conductive members, and left and right insulating members. The PTC material layer comprises a left notch at a left end and a right notch at a right end. The first conductive layer comprises a primary portion disposed on an upper surface of the PTC material layer and a secondary portion extending over the left notch, and the second conductive layer comprises a primary portion disposed on a lower surface of the PTC material layer and a secondary portion extending over the underside of the right notch. The left conductive member connects to the left electrode and the first conductive layer and isolates from the second conductive layer. The right conductive member connects to the right electrode and the second conductive layer and isolates from the first conductive layer.

Abstract: An over-current protection device adapted to be soldered onto a circuit board comprises a PTC material layer, a first electrode foil, a second electrode foil, a bonding section and a metal connecting member. The PTC material layer has opposite first and second surfaces. The first electrode foil is in physical contact with the first surface, and the second electrode foil electrically connects to the second surface. Both the second electrode foil and the bonding section are disposed on bottom of the device, and the bonding section is separated from the second electrode foil. The metal connecting member is disposed on the lateral surface of the device. The second electrode foil is adapted to be soldered onto an electrode section of the circuit board. The bonding section and the metal connecting member connect to corresponding joint section of the circuit board.

Abstract: An over-current protection device, which can be surface-mounted and stand upright on a circuit board and withstand 60 to 600 volts, comprises a PTC device, first and second electrodes. The PTC device is a laminated structure comprising first and second conductive layers and a PTC material layer. The first and second conductive layers are in physical contact with first and second planar surfaces of the PTC material layer, respectively. The first electrode is disposed on the first conductive layer. The second electrode is disposed on the second conductive layer and is separated from the first electrode. The first electrode, the second electrode and the PTC device commonly form an end surface which is substantially perpendicular to the first and second planar surfaces. The first electrode and the second electrode at the end surface serve as interfaces electrically connecting to the circuit board.

Abstract: An over-current protection device adapted to be soldered onto a circuit board comprises a PTC material layer, a first electrode foil, a second electrode foil, a bonding section and a metal connecting member. The PTC material layer has opposite first and second surfaces. The first electrode foil is in physical contact with the first surface, and the second electrode foil electrically connects to the second surface. Both the second electrode foil and the bonding section are disposed on bottom of the device, and the bonding section is separated from the second electrode foil. The metal connecting member is disposed on the lateral surface of the device. The second electrode foil is adapted to be soldered onto an electrode section of the circuit board. The bonding section and the metal connecting member connect to corresponding joint section of the circuit board.

Abstract: A surface mountable over-current protection device comprises one PTC material layer, first and second conductive layers, first and second electrodes, and an insulating layer. The PTC material layer comprises crystalline polymer and conductive filler dispersed therein. The first and second conductive layers are disposed on first and second planar surfaces of the PTC material layer, respectively. The first and second electrodes are electrically connected to the first and second conductive layers. The insulating layer is disposed between the first and the second electrodes for insulation. At the melting point of the crystalline polymer, the CTE of the crystalline polymer is greater than 100 times the CTE of the first or second conductive layer, and the first and/or second conductive layers has a thickness which is large enough to obtain a resistance jump value R3/Ri less than 1.4.

Abstract: An over-current protection device has a PTC device, first and second electrodes and an insulation layer. The PTC device comprises first and second electrically conductive members and a PTC layer laminated between the first and second electrically conductive members. The first and second electrodes are electrically connected to the first and second electrically conductive members, respectively. The insulation layer is disposed on a surface of the first electrically conductive member. The device is a stack structure extending along a first direction, and comprises at least one hole extending along a second direction substantially perpendicular to the first direction. The value of the covered area of the hole divided by the area of the form factor of the over-current protection device is not less than 2%, and the value of the thickness of the device divided by the number of the PTC devices is less than 0.7 mm.

Abstract: An over-current protection device, which can be surface-mounted and stand upright on a circuit board and withstand 60 to 600 volts, comprises a PTC device, first and second electrodes. The PTC device is a laminated structure comprising first and second conductive layers and a PTC material layer. The first and second conductive layers are in physical contact with first and second planar surfaces of the PTC material layer, respectively. The first electrode is disposed on the first conductive layer. The second electrode is disposed on the second conductive layer and is separated from the first electrode. The first electrode, the second electrode and the PTC device commonly form an end surface which is substantially perpendicular to the first and second planar surfaces. The first electrode and the second electrode at the end surface serve as interfaces electrically connecting to the circuit board.

Abstract: A surface mountable over-current protection device comprises one PTC material layer, first and second conductive layers, first and second electrodes, and an insulating layer. The PTC material layer comprises crystalline polymer and conductive filler dispersed therein. The first and second conductive layers are disposed on first and second planar surfaces of the PTC material layer, respectively. The first and second electrodes are electrically connected to the first and second conductive layers. The insulating layer is disposed between the first and the second electrodes for insulation. At the melting point of the crystalline polymer, the CTE of the crystalline polymer is greater than 100 times the CTE of the first or second conductive layer, and the first and/or second conductive layers has a thickness which is large enough to obtain a resistance jump value R3/Ri less than 1.4.

Abstract: An over-current protection device has a PTC device, first and second electrodes and an insulation layer. The PTC device comprises first and second electrically conductive members and a PTC layer laminated between the first and second electrically conductive members. The first and second electrodes are electrically connected to the first and second electrically conductive members, respectively. The insulation layer is disposed on a surface of the first electrically conductive member. The device is a stack structure extending along a first direction, and comprises at least one hole extending along a second direction substantially perpendicular to the first direction. The value of the covered area of the hole divided by the area of the form factor of the over-current protection device is not less than 2%, and the value of the thickness of the device divided by the number of the PIC devices is less than 0.7 mm.

Abstract: The present invention discloses a radio frequency identification device implemented with a metal-gate semiconductor fabrication process, wherein the charge capacitor, which is formed by the special parasitic N-type and P-type guard rings in the chip fabricated with the metal-gate process, incorporated with the original P-type and N-type transistors of metal oxide semiconductor (PMOS/NMOS) not only can provide a horizontal surface current but also can provide a rectified current for the performance of the entire circuit, which can advance the metal gate process to RFID industry in cooperation with an identification code holder circuit and a non-synchronous local oscillation circuit so that the fabrication cost can be lowered and the fabrication time can be shortened.