Abstract: A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

Abstract: According to one embodiment of the invention, a method of modifying a mechanical, physical and/or electrical property of a dielectric layer comprises exposing the dielectric layer to a first dose of electron beam radiation at a first energy level; and thereafter, exposing the dielectric layer to a second dose of electron beam radiation at a second energy level that is different from the first energy level.

Abstract: A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

Abstract: A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen in a chemical vapor deposition chamber. The method further includes exposing the low dielectric constant film to an electron beam having an exposure dose less than about 400 &mgr;C/cm2 at conditions sufficient to increase the hardness of the low dielectric constant film.

Abstract: A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided by reacting a gas mixture including one or more organosilicon compounds and one or more oxidizing gases. In one aspect, the organosilicon compound comprises a hydrocarbon component having one or more unsaturated carbon-carbon bonds, and in another aspect, the gas mixture further comprises one or more aliphatic hydrocarbon compounds having one or more unsaturated carbon-carbon bonds. The low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment, and in another aspect, the post-treatment is an annealing process.

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided by using one or more cyclic organic precursors and one or more aliphatic precursors. In one aspect, a cyclic organosilicon compound, an aliphatic organosilicon, and an aliphatic hydrocarbon compound are reacted with an oxidizing gas at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate. The cyclic organosilicon compound includes at least one silicon-carbon bond. The aliphatic organosilicon compound includes a silicon-hydrogen bond or a silicon-oxygen bond.

Abstract: A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.