Patents by Inventor Wen-Han Chu

Wen-Han Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sub-resolution rod in the transition region
    Patent number: 8765329
    Abstract: The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: July 1, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jeng-Shiun Ho, Luke Lo, Ting-Chun Liu, Min-Hung Cheng, Jing-Wei Shih, Wen-Han Chu, Cheng-Cheng Kuo, Hua-Tai Lin, Tsai-Sheng Gau, Ru-Gun Liu, Yu-Hsiang Lin, Shang-Yu Huang
  • SUB-RESOLUTION ROD IN THE TRANSITION REGION
    Publication number: 20120115073
    Abstract: The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.
    Type: Application
    Filed: November 5, 2010
    Publication date: May 10, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jeng-Shiun Ho, Luke Lo, Ting-Chun Liu, Min-Hung Cheng, Jing-Wei Shih, Wen-Han Chu, Cheng-Cheng Kuo, Hua-Tai Lin, Tsai-Sheng Gau, Ru-Gun Liu, Yu-Hsiang Lin, Shang-Yu Huang