Abstract: A semiconductor device includes a substrate, a channel layer, an insulating layer, source/drain contacts, a gate dielectric layer, and a gate electrode. The channel layer over the substrate and includes two dimensional (2D) material. The insulating layer is on the channel layer. The source/drain contacts are over the channel layer. The gate dielectric layer is over the insulating layer and the channel layer. The gate electrode is over the gate dielectric layer and between the source/drain contacts.

Abstract: A semiconductor device includes a substrate, a channel layer, an insulating layer, source/drain contacts, a gate dielectric layer, and a gate electrode. The channel layer over the substrate and includes two dimensional (2D) material. The insulating layer is on the channel layer. The source/drain contacts are over the channel layer. The gate dielectric layer is over the insulating layer and the channel layer. The gate electrode is over the gate dielectric layer and between the source/drain contacts.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a plurality of photodetectors disposed within a substrate. The substrate comprises a front-side surface opposite a back-side surface. An outer isolation structure is disposed in the substrate and laterally surrounds the plurality of photodetectors. The outer isolation structure has a first height. An inner isolation structure is spaced between sidewalls of the outer isolation structure. The inner isolation structure is disposed between adjacent photodetectors in the plurality of photodetectors. The outer isolation structure and the inner isolation structure respectively extend from the back-side surface toward the front-side surface. The inner isolation structure comprises a second height less than the first height.

Abstract: A semiconductor device includes channel region, first and second two-dimensional metallic contacts, a gate structure, and first and second metal contacts. The channel region includes a two-dimensional semiconductor material. The first two-dimensional metallic contact is disposed at a side of the channel region and includes a two-dimensional metallic material. The second two-dimensional metallic contact is disposed at an opposite side of the channel region and includes the two-dimensional metallic material. The gate structure is disposed on the channel region in between the first and second two-dimensional metallic contacts. The first metal contact is disposed at an opposite side of the first two-dimensional metallic contact with respect to the channel region. The second metal contact is disposed at an opposite side of the second two-dimensional metallic contact with respect to the channel region.

Abstract: A semiconductor device includes channel region, first and second two-dimensional metallic contacts, a gate structure, and first and second metal contacts. The channel region includes a two-dimensional semiconductor material. The first two-dimensional metallic contact is disposed at a side of the channel region and includes a two-dimensional metallic material. The second two-dimensional metallic contact is disposed at an opposite side of the channel region and includes the two-dimensional metallic material. The gate structure is disposed on the channel region in between the first and second two-dimensional metallic contacts. The first metal contact is disposed at an opposite side of the first two-dimensional metallic contact with respect to the channel region. The second metal contact is disposed at an opposite side of the second two-dimensional metallic contact with respect to the channel region.

Abstract: A semiconductor device includes channel region, first and second two-dimensional metallic contacts, a gate structure, and first and second metal contacts. The channel region includes a two-dimensional semiconductor material. The first two-dimensional metallic contact is disposed at a side of the channel region and includes a two-dimensional metallic material. The second two-dimensional metallic contact is disposed at an opposite side of the channel region and includes the two-dimensional metallic material. The gate structure is disposed on the channel region in between the first and second two-dimensional metallic contacts. The first metal contact is disposed at an opposite side of the first two-dimensional metallic contact with respect to the channel region. The second metal contact is disposed at an opposite side of the second two-dimensional metallic contact with respect to the channel region.

Abstract: A method includes depositing a copper layer over a first substrate, annealing the copper layer, depositing a hexagonal boron nitride (hBN) film on the copper layer, and removing the hBN film from the copper layer. The hBN film may be transferred to a second substrate.

Abstract: A semiconductor device includes a substrate, a channel layer, an insulating layer, source/drain contacts, a gate dielectric layer, and a gate electrode. The channel layer over the substrate and includes two dimensional (2D) material. The insulating layer is on the channel layer. The source/drain contacts are over the channel layer. The gate dielectric layer is over the insulating layer and the channel layer. The gate electrode is over the gate dielectric layer and between the source/drain contacts.

Abstract: A semiconductor device includes a substrate, a channel layer, an insulating layer, source/drain contacts, a gate dielectric layer, and a gate electrode. The channel layer over the substrate and includes two dimensional (2D) material. The insulating layer is on the channel layer. The source/drain contacts are over the channel layer. The gate dielectric layer is over the insulating layer and the channel layer. The gate electrode is over the gate dielectric layer and between the source/drain contacts.

Abstract: A method includes depositing a copper layer over a first substrate, annealing the copper layer, depositing a hexagonal boron nitride (hBN) film on the copper layer, and removing the hBN film from the copper layer. The hBN film may be transferred to a second substrate.

Abstract: A semiconductor device includes a substrate, a channel layer, an insulating layer, source/drain contacts, a gate dielectric layer, and a gate electrode. The channel layer over the substrate and includes two dimensional (2D) material. The insulating layer is on the channel layer. The source/drain contacts are over the channel layer. The gate dielectric layer is over the insulating layer and the channel layer. The gate electrode is over the gate dielectric layer and between the source/drain contacts.

Abstract: A method of forming a single-crystal group-III nitride is provided in the present invention. In some embodiments, the method includes the following steps. First, a molybdenum disulfide (MoS2) is formed on a remote substrate. Then, the MoS2 is transferred onto a substrate. Next, a sputtering operation is performed to epitaxially grow a single-crystal group-III nitride layer on the MoS2, so as to form the single-crystal group-III nitride layer on the substrate such as a Si substrate or a flexible substrate.

Abstract: An electronic control apparatus including motion sensors is integrated in a portable electronic device to responsively control a media content stored in the portable electronic device, in response to motion sensor signals to flip, zoom, displace images/pages of the media content displayed on a display field of a display thereof. Accordingly, a responsive control method includes the steps of: presetting a first threshold angle; sensing an first rotation angle of the portable electronic device to send out a first rotation sensing signal as a rotation of a yaw, pitch or roll of a portable electronic device detected by a sensing module including motion sensors; and receiving the first rotation sensing signal to calculate and determine whether the first rotation angle is greater than the first threshold angle to responsively control a media content stored in an electronic control apparatus be flipped, zoomed or displaced when the first rotation angle is greater than the first threshold angle.

Abstract: An electronic control apparatus including motion sensors is integrated in a portable electronic device to responsively control a media content stored in the portable electronic device, in response to motion sensor signals to flip, zoom, displace images/pages of the media content displayed on a display field of a display thereof. Accordingly, a responsive control method includes the steps of: presetting a first threshold angle; sensing an first rotation angle of the portable electronic device to send out a first rotation sensing signal as a rotation of a yaw, pitch or roll of a portable electronic device detected by a sensing module including motion sensors; and receiving the first rotation sensing signal to calculate and determine whether the first rotation angle is greater than the first threshold angle to responsively control a media content stored in an electronic control apparatus be flipped, zoomed or displaced when the first rotation angle is greater than the first threshold angle.

Abstract: An electronic control apparatus including motion sensors is integrated in a portable electronic device to responsively control a media content stored in the portable electronic device, in response to motion sensor signals to flip, zoom, displace images/pages of the media content displayed on a display field of a display thereof. Accordingly, a responsive control method includes the steps of: presetting a first threshold angle; sensing an first rotation angle of the portable electronic device to send out a first rotation sensing signal as a rotation of a yaw, pitch or roll of a portable electronic device detected by a sensing module including motion sensors; and receiving the first rotation sensing signal to calculate and determine whether the first rotation angle is greater than the first threshold angle to responsively control a media content stored in an electronic control apparatus be flipped, zoomed or displaced when the first rotation angle is greater than the first threshold angle.

Abstract: A system and method efficiently deletes a file from secure storage, i.e., a cryptainer, served by a storage system. The cryptainer is configured to store a plurality of files, each of which stores an associated file key within a special metadata portion of the file. Notably, special metadata is created by a security appliance coupled to the storage system and attached to each file to thereby create two portions of the file: the special metadata portion and the main, “file data” portion. The security appliance then stores the file key within the specially-created metadata portion of the file. A cryptainer key is associated with the cryptainer. Each file key is used to encrypt the file data portion within its associated file and the cryptainer key is used to encrypt the part of the special metadata portion of each file. To delete the file from the cryptainer, the file key of the file is deleted and the special metadata portions of all other files stored in the cryptainer are re-keyed using a new cryptainer key.

Abstract: A method for distributing a shared secret key among a plurality of nodes is described. Each node establishes a secret key, the number of nodes being more than two nodes. A node distributes by a ring protocol executing over computer network connections an encrypted version of the secret key of each node to other nodes of the plurality of nodes. Each node decrypts the secret keys of other nodes so that each node has the secret key of other nodes. Each node combines the secret keys of other nodes to form a shared secret key available to other nodes.

Abstract: A split knowledge protocol adapted to establish an initial key for use in authenticating a first computer to a second computer. The second computer initiates the split knowledge protocol by generating a bit sequence and splitting the sequence into a predetermined number of segments. The second computer then encrypts each segment with a predetermined key associated with each segment before transmitting each encrypted segment to the first computer. In response, the first computer decrypts each encrypted segment using the associated key. The first computer then recovers the bit sequence from the decrypted segments. Accordingly, the first and second computers have knowledge of (i.e., access to) the same bit sequence, which may thus be used as the initial key.

Abstract: An apparatus and method for managing the distribution and expansion of public keys held by a group or array of systems in white lists. The addition of a new system to the array entails a manual input to authorize the introduction of the new system to one trusted system in the array. After the introduction the new system is trusted by the one member and the white list of the one member is loaded into the white list of the new system. The new system then requests joining each of the other systems in the array. For each system in the array asked by the new system, the systems in the array ask if any other systems in the array already trust the new member. In response, a system of the array that trusts the new system responds by sending its white list (containing the public key of the new system) to the requesting system. Eventually the public key of the new system is in the white lists of all the systems in the array.

Abstract: A system and method for authorizing administrative operations in a computer is provided. The computer initiates the split knowledge protocol upon an attempt by an administrator to invoke the operations. The administrator identifies a predetermined number of entities designated to authorize the operation. The computer creates a bit sequence and splits the bit sequence into a number of segments equal to the predetermined number of entities. Each entity thereafter decrypts a respective element to essentially authorize invocation of the operations. In response, the computer processes the decrypted segments to re-create the bit sequence. As an added level of security, the computer coma) pares the re-created bit sequence with the originally created sequence and, if they match, performs the operations.