Abstract: A semiconductor structure and method for forming the semiconductor structure are provided. The method includes: providing a semiconductor substrate, which has a plurality of independent active areas that are isolated from each other by shallow trench isolation areas; forming trenches by etching the active areas and the shallow trench isolation areas, the trenches include first trenches and second trenches, the first trenches are located in the active areas, the second trenches are located in the shallow trench isolation areas, and the first trenches have a width greater than a width of the second trenches; forming word lines in the trenches, the word lines include first word lines and second word lines, each first word line is located in the respective first trench, each second word line is located in the respective second trench, and the first word lines have a width greater than a width of the second word lines.

Abstract: The present application relates to the technical field of semiconductor manufacturing, in particular to a method for forming a film layer with uniform thickness distribution and a semiconductor structure. The method for forming a film layer with uniform thickness distribution comprises: providing a substrate, a non-flat surface for forming a film layer being provided in the substrate; forming a first sub-layer on the non-flat surface at a first temperature by an in-situ steam generation process; and, forming a second sub-layer on a surface of the first sub-layer at a second temperature by an in-situ steam generation process, the film layer at least comprising the first sub-layer and the second sub-layer, the second temperature being higher than the first temperature.

Abstract: A semiconductor structure and method for forming the semiconductor structure are provided. The method includes: providing a semiconductor substrate, which has a plurality of independent active areas that are isolated from each other by shallow trench isolation areas; forming trenches by etching the active areas and the shallow trench isolation areas, the trenches include first trenches and second trenches, the first trenches are located in the active areas, the second trenches are located in the shallow trench isolation areas, and the first trenches have a width greater than a width of the second trenches; forming word lines in the trenches, the word lines include first word lines and second word lines, each first word line is located in the respective first trench, each second word line is located in the respective second trench, and the first word lines have a width greater than a width of the second word lines.

Abstract: A memory and a method for forming the same are provided. In the method, a word line trench is formed in active regions and an isolation layer. The formed word line trench includes a first partial word line trench located in the active regions and a second partial word line trench located in the isolation layer. The width and depth of the second partial word line trench are greater than the width and depth of the first partial word line trench respectively. Therefore, when a word line structure is formed in the word line trench, the formed word line structure also includes a first partial word line structure located in the first partial word line trench and a second partial word line structure located in the second partial word line trench.

Abstract: A method and apparatus for moving the focus between the window area and the tool bar, said focus movement can be performed on an information apparatus, such as a set top box (STB). The present invention enables a user to control the focus, the window area, and the tool bar via directional buttons only. When one directional button is pressed, the focus may move within the window area, within the tool bar area, from the window area to the tool bar, or from the tool bar to the window area.

Abstract: A method and apparatus for moving the focus between the window area and the tool bar, said focus movement can be performed on an information apparatus, such as a set top box (STB). The present invention enables a user to control the focus, the window area, and the tool bar via directional buttons only. When one directional button is pressed, the focus may move within the window area, within the tool bar area, from the window area to the tool bar, or from the tool bar to the window area.

Abstract: A method and apparatus for moving the focus within a window, the focus movement can be performed on an information apparatus, such as a set top box (STB). The present invention enables a user to control the focus to move within a window via directional buttons. When a directional button is pressed, determining if there is a link along the direction of the directional button pressed by the user, if yes, then move the focus to the link. If there is no link, then further determine if there is any content. If yes, then scroll the active sub-window along the direction of the directional button. If there is no content, then further determine if there is a sub-window, if yes, then move the focus to the sub-window.

Abstract: A method and apparatus for scrolling a display, the scrolling corresponding to the movement of a cursor, which scrolling can be performed on an information apparatus, such as a set top box (STB). The present invention enables a user to control the cursor on the screen via an input device so the cursor moves in an active window having display content. When the cursor is moved to the edge of the window, the window is scrolled to change the displaying region, and the cursor is moved sequentially to about the middle position of the new window.