Abstract: Embodiments described herein relate to an optical device and methods of forming an optical device. The optical device includes a substrate, an illumination source, a capping layer, an encapsulation layer, and a passivation layer. The encapsulation layer includes a first atomic layer deposition (ALD) layer, a chemical vapor deposition (CVD) layer, and a second ALD layer. The method includes disposing a capping layer over an illumination layer, the illumination layer disposed over a substrate in a processing chamber; disposing a first atomic layer deposition (ALD) layer over the capping layer; disposing a chemical vapor deposition (CVD) layer over the first ALD layer; disposing a second ALD layer over the CVD layer; and disposing a passivation layer over the second ALD layer.

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. In one example, a device includes a substrate, pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality of overhang structures. The first sub-pixel includes a first anode, OLED material, a first cathode, and a first encapsulation layer having a gap defined by a first portion of the first encapsulation layer disposed over the first cathode, a second portion of the first encapsulation layer disposed over a sidewall of the body structure, and a third portion of the first encapsulation layer under an underside surface of the top extension of the top structure, the first portion of the first encapsulation layer contacting the third portion of the first encapsulation layer.

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display, such as an organic light-emitting diode (OLED) display, are provided. In one example, a sub-pixel includes a substrate, adjacent overhang structures, an anode, an OLED material, a cathode, an encapsulation layer stack. The encapsulation layer stack includes a first layer, a second layer disposed over the first layer, and a third layer. The first layer and the second layer have a first portion disposed over the cathode, a second portion disposed over a sidewall of each overhang structure, and a third portion disposed under an underside surface of an extension of each overhang structure. A gap is defined by contact of the first portion of the second layer and the third portion of the second layer. The third layer is disposed over the second layer outside of the gap.

Abstract: The present disclosure generally provides an apparatus and method for gas diffuser support structure for a vacuum chamber. The gas diffuser support structure comprises a backing plate having a central bore, and a gas deflector having a length and a width unequal to the length coupled to the backing plate by a plurality of outward fasteners coupled to a plurality of outward threaded holes formed in the backing plate, in which a spacer is disposed between the backing plate and the gas deflector, and in which a length to width ratio of the gas deflector is about 0.1:1 to about 10:1.

Abstract: Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed on and extending laterally past a base structure disposed on the PDL structure. Each second overhang is defined by a top structure disposed on and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed on the HIL material and extends under the first overhang.

Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

Abstract: A resistor structure includes a resistor body; and a first electrode structure disposed at and being in electric contact with a first end of the resistor body, and a second electrode structure disposed at and being in electric contact with a second end opposite to the first end of the resistor body. Each of the first electrode structure and the second electrode structure has at least one conductive protrusion. The at least one conductive protrusion of the first electrode structure and the at least one conductive protrusion of the second electrode structure both serve as voltage-sensing terminals for electric connection to an external voltage measurement device, or both serve as current-sensing terminals for electric connection to a current measurement device.

Abstract: Embodiments of the present disclosure generally relate to methods for forming an organic light emitting diode (OLED) device. Forming the OLED device comprises depositing a first barrier layer on a substrate having an OLED structure disposed thereon. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer comprises generating water from the mixed gas plasma in a process chamber in which the curing occurs. The deposition of the first sublayer and the curing of the first sublayer is repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.

Abstract: Examples disclosed herein relate to device. The device includes a substrate, a plurality of adjacent pixel-defining layer (PDL structures disposed over the substrate, and a plurality of sub-pixels. The PDL structure have a top surface coupled to adjacent sidewalls of the PDL structure. The plurality of sub-pixels are defined by the PDL structures. Each sub-pixel includes an anode, an organic light emitting diode (OLED), a cathode, and an encapsulation layer. The organic light emitting diode (OLED) material disposed over the anode. The OLED material extends over the top surface of the PDL structure past the adjacent sidewalls. The cathode is disposed over the OLED material. The cathode extends over the top surface of the PDL structure past the adjacent sidewalls. The encapsulation layer is disposed over the cathode. The encapsulation layer has a first sidewall and a second sidewall.

Abstract: Embodiments described herein relate to sub-pixel circuits, displays including sub-pixel circuits, and a method of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. Some configurations of the displays described herein, include the sub-pixel circuits and at least one sensor opening adjacent to the overhang structure and an adjacent sub-pixel circuit. The at least one sensor opening includes a sensor disposed thereunder. Other configurations displays described herein, include sub-pixel circuits including OLED sub-pixels and a transparent sub-pixel such that a sensor is disposed thereunder. The configurations described herein utilize sensors that are integrated to increase the transmittance of the display while eliminating the need for bezels and reducing dead zones in the display.

Abstract: A resistor structure includes a resistor body; and a first electrode structure disposed at and being in electric contact with a first end of the resistor body, and a second electrode structure disposed at and being in electric contact with a second end opposite to the first end of the resistor body. Each of the first electrode structure and the second electrode structure has at least one conductive protrusion. The at least one conductive protrusion of the first electrode structure and the at least one conductive protrusion of the second electrode structure both serve as voltage-sensing terminals for electric connection to an external voltage measurement device, or both serve as current-sensing terminals for electric connection to a current measurement device.

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. In one example, a device includes a substrate, pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality of overhang structures. The first sub-pixel includes a first anode, OLED material, a first cathode, and a first encapsulation layer having a gap defined by a first portion of the first encapsulation layer disposed over the first cathode, a second portion of the first encapsulation layer disposed over a sidewall of the body structure, and a third portion of the first encapsulation layer under an underside surface of the top extension of the top structure, the first portion of the first encapsulation layer contacting the third portion of the first encapsulation layer.

Abstract: Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed on and extending laterally past a base structure disposed on the PDL structure. Each second overhang is defined by a top structure disposed on and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed on the HIL material and extends under the first overhang.

Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

Abstract: A method and apparatus for forming an encapsulation layer on an organic light emitting diode (OLED) patterned substrate are described. A sidewall planarization layer fills voids in a scalloped sidewall of a wall feature on the OLED patterned substrate. The sidewall planarization layer is cured in the same chamber as the deposition of the sidewall planarization layer. A barrier layer is formed on the sidewall planarization layer. The sidewall planarization layer provides a planarized surface for good adhesion of the barrier layer over the sidewall planarization layer which minimizes the possibility of defects to the OLED patterned substrate from moisture of oxygen penetrating the OLED patterned substrate.

Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

Abstract: Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed over and extending laterally past a base structure disposed over the PDL structure. Each second overhang is defined by a top structure disposed over and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed over the HIL material and extends under the first overhang.

Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

Abstract: Packaging materials and methods of manufacture are disclosed. The packaging material comprises a substrate surface and film coating selected from the group consisting of an elastomer, a polymer, an inorganic material and combinations thereof. The film coating includes a first layer and a second layer, the first layer deposited on the second layer. The first layer has a formula of SiOxNyCz, where x is in a range from 1.9 to 2.15, y is in a range from 0.01 to 0.08, and z is in a range from 0.10 to 0.40.

Abstract: Embodiments of the present disclosure generally relate to an organic light emitting diode device, and more particularly, to moisture barrier films utilized in an OLED device. The OLED device comprises a thin film encapsulation structure and/or a thin film transistor. A moisture barrier film is used as a first barrier layer in the thin film encapsulation structure and as a passivation layer and/or a gate insulating layer in the thin film transistor. The moisture barrier film comprises a silicon oxynitride material having a low refractive index of less than about 1.5, a low water vapor transmission rate of less than about 5.0×10?5 g/m2/day, and low hydrogen content of less than about 8%.