Abstract: The present invention relates to a light-emitting diode structure for increasing the equivalent conductivity of the light-emitting diode and does not necessary to change the thickness of the epitaxy. The structure of the present invention comprises inserting a higher electrical n-type conductivity layer in the epitaxial structure of the light-emitting diode. Furthermore, a tunneling layer made of higher density p-type and n-type materials is inserted in between. Under voltage bias, the current will run through electrode and across the low resistance layer by means of bias/tunneling effect, and finally reach the easily conductive n-type GaN layer, then the current is moving along the p/n junction and arrive at the bottom of the emitting layer. Then after a breakdown/tunneling effect, the current enter into p-type GaN layer and then into the emitting layer for recombination and radiation.

Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Abstract: A method for manufacturing GaN-based LED (Gallium-Nitride based Light-Emitting Diode) is provided for remedy of the defect of central notch in the far field beam pattern of a conventional GaN-based LED by relocating a pair of P-and N-electrodes and reforming the shape of an illuminating surface thereof.