Patents by Inventor Wen-Hsien Kuo

Wen-Hsien Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250096153
    Abstract: An electronic package and a manufacturing method thereof are provided, in which an electronic component is disposed on a substrate and covered with an encapsulation layer, and a frame body is embedded in the encapsulation layer and protrudes from the substrate. Therefore, the frame body can disperse thermal stress, thereby preventing warping from occurring to the electronic package.
    Type: Application
    Filed: January 30, 2024
    Publication date: March 20, 2025
    Inventors: Chih-Hsien CHIU, Wen-Jung TSAI, Chien-Cheng LIN, Chun-Chong CHIEN, Shih-Shiung KUO
  • Publication number: 20240257871
    Abstract: A phase-change memory (PCM) cell is provided to include a first electrode, a second electrode, and a phase-change feature disposed between the first electrode and the second electrode. The phase-change feature is configured to change its data state based on a write operation performed on the PCM cell. The write operation includes a reset stage and a set stage. In the reset stage, a plurality of reset current pulses are applied to the PCM cell, and the reset current pulses have increasing current amplitudes. In the set stage, a plurality of set current pulses are applied to the PCM cell, and the set current pulses exhibit an increasing trend in current amplitude. The current amplitudes of the set current pulses are smaller than those of the reset current pulses.
    Type: Application
    Filed: April 11, 2024
    Publication date: August 1, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Huei LEE, Chun-Wei CHANG, Jian-Hong LIN, Wen-Hsien KUO, Pei-Chun LIAO, Chih-Hung NIEN
  • Publication number: 20240249792
    Abstract: A method of extending a lifetime of a memory cell is provided. The method includes detecting, by a memory controller, whether a memory cell has failed or not; repairing, by the memory controller, the memory cell by applying a first pulse having a first amplitude to the memory cell, in response to determining that the memory cell has failed; and writing, by the memory controller, input data to the memory cell by applying a second pulse having a second amplitude less than the first amplitude, in response to repairing the memory cell. In one expect, the detecting includes writing, by the memory controller, additional input data to the memory cell; reading, by the memory controller, data stored by the memory cell; comparing, by the memory controller, the data stored by the memory cell with the additional input data; and determining whether the memory cell has failed according to the comparison.
    Type: Application
    Filed: April 3, 2024
    Publication date: July 25, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yung-Huei Lee, Pei-Chun Liao, Jian-Hong Lin, Dawei Heh, Wen Hsien Kuo
  • Patent number: 11978511
    Abstract: A phase-change memory (PCM) cell is provided to include a first electrode, a second electrode, and a phase-change feature disposed between the first electrode and the second electrode. The phase-change feature is configured to change its data state based on a write operation performed on the PCM cell. The write operation includes a reset stage and a set stage. In the reset stage, a plurality of reset current pulses are applied to the PCM cell, and the reset current pulses have increasing current amplitudes. In the set stage, a plurality of set current pulses are applied to the PCM cell, and the set current pulses exhibit an increasing trend in current amplitude. The current amplitudes of the set current pulses are smaller than those of the reset current pulses.
    Type: Grant
    Filed: January 21, 2022
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Huei Lee, Chun-Wei Chang, Jian-Hong Lin, Wen-Hsien Kuo, Pei-Chun Liao, Chih-Hung Nien
  • Publication number: 20230027575
    Abstract: A phase-change memory (PCM) cell is provided to include a first electrode, a second electrode, and a phase-change feature disposed between the first electrode and the second electrode. The phase-change feature is configured to change its data state based on a write operation performed on the PCM cell. The write operation includes a reset stage and a set stage. In the reset stage, a plurality of reset current pulses are applied to the PCM cell, and the reset current pulses have increasing current amplitudes. In the set stage, a plurality of set current pulses are applied to the PCM cell, and the set current pulses exhibit an increasing trend in current amplitude. The current amplitudes of the set current pulses are smaller than those of the reset current pulses.
    Type: Application
    Filed: January 21, 2022
    Publication date: January 26, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Huei LEE, Chun-Wei CHANG, Jian-Hong LIN, Wen-Hsien KUO, Pei-Chun LIAO, Chih-Hung NIEN
  • Patent number: 6050441
    Abstract: A sealing container, which includes a container body, an internally ribbed split locating ring mounted around the container body, a clamp fastened to flanged ends of the split locating ring to fix the split locating ring to the container body, a cover pivoted to the flanged ends of the split locating ring, a rubber seal ring fastened to the cover at a bottom side for sealing the container body, a lever pivoted to the a fixed block at the split locating ring, and a locking plate pivoted to the lever and controlled by the lever to lock the cover after closing of the cover on the container body.
    Type: Grant
    Filed: August 23, 1999
    Date of Patent: April 18, 2000
    Inventor: Wen-Hsien Kuo