Patents by Inventor Wen-Hsin HSU

Wen-Hsin HSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor memory device and fabrication method thereof
    Patent number: 11706933
    Abstract: A semiconductor memory device includes a substrate, a dielectric layer on the substrate, and a contact plug in the dielectric layer. An upper portion of the contact plug protrudes from a top surface of the dielectric layer. The upper portion of the contact plug acts as a first electrode. A buffer layer is disposed on the dielectric layer and beside the upper portion of the contact plug. A resistive-switching layer is disposed beside the buffer layer. A second electrode is disposed beside the resistive-switching layer.
    Type: Grant
    Filed: April 7, 2021
    Date of Patent: July 18, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Hsin Hsu, Ko-Chi Chen, Tzu-Yun Chang, Chung-Tse Chen
  • SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20220293679
    Abstract: A semiconductor memory device includes a substrate, a dielectric layer on the substrate, and a contact plug in the dielectric layer. An upper portion of the contact plug protrudes from a top surface of the dielectric layer. The upper portion of the contact plug acts as a first electrode. A buffer layer is disposed on the dielectric layer and beside the upper portion of the contact plug. A resistive-switching layer is disposed beside the buffer layer. A second electrode is disposed beside the resistive-switching layer.
    Type: Application
    Filed: April 7, 2021
    Publication date: September 15, 2022
    Inventors: Wen-Hsin Hsu, Ko-Chi Chen, Tzu-Yun Chang, Chung-Tse Chen
  • Temperature detection device
    Patent number: 10458859
    Abstract: A temperature detection device includes a circuit board, a temperature sensor, and at least one signal transmission line. The temperature sensor is disposed on the circuit board and overlapped with a light source module, and the temperature sensor and the light source module forms a heat conduction path. The signal transmission line is connected to the circuit board to output a sensing signal of the temperature sensor.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: October 29, 2019
    Assignee: YOUNG OPTICS INC.
    Inventors: Chih-Yung Shih, Jia-Bin Huang, Wen-Hsin Hsu
  • Resistive memory and method for manufacturing the same
    Patent number: 10074692
    Abstract: A semiconductor structure includes a memory unit structure. The memory unit structure includes a transistor, a first electrode, two second electrode, and two resistive random access memory (RRAM) elements. The first electrode and the two second electrodes are disposed in a horizontal plane. The first electrode is disposed between the two second electrodes. The first electrode and the two second electrodes are disposed in parallel. The first electrode is coupled to a source region of the transistor. One of the two RRAM elements is disposed between the first electrode and one of the two second electrodes. The other one of the two RRAM elements is disposed between the first electrode and the other one of the two second electrodes.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: September 11, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Hsin Hsu, Ko-Chi Chen, Tzu-Yun Chang
  • RESISTIVE MEMORY AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20180175110
    Abstract: A semiconductor structure includes a memory unit structure. The memory unit structure includes a transistor, a first electrode, two second electrode, and two resistive random access memory (RRAM) elements. The first electrode and the two second electrodes are disposed in a horizontal plane. The first electrode is disposed between the two second electrodes. The first electrode and the two second electrodes are disposed in parallel. The first electrode is coupled to a source region of the transistor. One of the two RRAM elements is disposed between the first electrode and one of the two second electrodes. The other one of the two RRAM elements is disposed between the first electrode and the other one of the two second electrodes.
    Type: Application
    Filed: January 31, 2018
    Publication date: June 21, 2018
    Inventors: Wen-Hsin Hsu, Ko-Chi Chen, Tzu-Yun Chang
  • Resistive memory and method for manufacturing the same
    Patent number: 9923028
    Abstract: A semiconductor structure includes a memory unit structure. The memory unit structure includes a transistor, a first electrode, two second electrode, and two resistive random access memory (RRAM) elements. The first electrode and the two second electrodes are disposed in a horizontal plane. The first electrode is disposed between the two second electrodes. The first electrode and the two second electrodes are disposed in parallel. The first electrode is coupled to a source region of the transistor. One of the two RRAM elements is disposed between the first electrode and one of the two second electrodes. The other one of the two RRAM elements is disposed between the first electrode and the other one of the two second electrodes.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: March 20, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Hsin Hsu, Ko-Chi Chen, Tzu-Yun Chang
  • TEMPERATURE DETECTION DEVICE
    Publication number: 20180073937
    Abstract: A temperature detection device includes a circuit board, a temperature sensor, and at least one signal transmission line. The temperature sensor is disposed on the circuit board and overlapped with a light source module, and the temperature sensor and the light source module forms a heat conduction path. The signal transmission line is connected to the circuit board to output a sensing signal of the temperature sensor.
    Type: Application
    Filed: April 18, 2017
    Publication date: March 15, 2018
    Inventors: Chih-Yung SHIH, Jia-Bin HUANG, Wen-Hsin HSU