Abstract: Microelectromechanical devices and methods of manufacture are presented. Embodiments include bonding a mask substrate to a first microelectromechanical system (MEMS) device. After the bonding has been performed, the mask substrate is patterned. A first conductive pillar is formed within the mask substrate, and a second conductive pillar is formed within the mask substrate, the second conductive pillar having a different height from the first conductive pillar. The mask substrate is then removed.

Abstract: A semiconductor device includes a substrate, at least one via, a liner layer and a conductive layer. The substrate includes an electronic circuitry. The at least one via passes through the substrate. The at least one via includes a plurality of concave portions on a sidewall thereof. The liner layer fills in the plurality of concave portions of the at least one via. The conductive layer is disposed on the sidewall of the at least one via, covers the liner layer, and extends onto a surface of the substrate. The thickness of the conductive layer on the sidewall of the at least one via is varied.

Abstract: A cable connector includes a casing, a connecting portion, at least one pressing button, and at least one hook module. The connecting portion is disposed on a first direction surface of the casing for coupling with an electronic device connector, the pressing button is disposed on a third direction surface of the casing, and the hook module is disposed between the connecting portion and the pressing button. In addition, when the pressing button is pressed in the third direction, a hook end of the hook module is moved along a second direction on a protective shell of the connecting portion for separating from the electronic device connector.

Abstract: A cable connector includes a casing, a connecting portion, at least one pressing button, and at least one hook module. The connecting portion is disposed on a first direction surface of the casing for coupling with an electronic device connector, the pressing button is disposed on a third direction surface of the casing, and the hook module is disposed between the connecting portion and the pressing button. In addition, when the pressing button is pressed in the third direction, a hook end of the hook module is moved along a second direction on a protective shell of the connecting portion for separating from the electronic device connector.

Abstract: A semiconductor structure for operation at high current related to a small volume of semiconductor structure that could enhance the rated current of the prior art, especially used in high-power cells of integrated circuits like transistors in the power supply. The semiconductor structure uses the third metal layer for enhancing the rated current of the circuit of the prior through parallel connected the circuit of the prior.