Patents by Inventor Wen-Hsuan Chao
Wen-Hsuan Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230203680Abstract: An anode catalyst material has a chemical formula of FeaNibMcNdOe, wherein M is Mo, W, Sn, Si, Nb, V, Cr, Ta or a combination thereof. a+b+c+d+e=1, a>0, b>0, c>0, d?0, and e?0. The anode catalyst material can be used in a water electrolysis device for hydrogen evolution, which includes an anode and a cathode disposed in an alkaline aqueous solution, and the anode includes the described anode catalyst material.Type: ApplicationFiled: June 14, 2022Publication date: June 29, 2023Applicant: Industrial Technology Research InstituteInventors: Wen-Hsuan CHAO, Kuo-Hsin LIN, Hsiao-Chun HUANG, Shih-Chang CHEN, Han-Jung LI, Li-Duan TSAI
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Patent number: 11142836Abstract: A method for manufacturing catalyst material is provided, which includes putting an M? target and an M? target into a nitrogen-containing atmosphere, in which M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M? is Nb, Ta, or a combination thereof. Powers are provided to the M? target and the M? target, respectively. Providing ions to bombard the M? target and the M? target to sputtering deposit M?aM?bN2 on a substrate, wherein 0.7?a?1.7, 0.3?b?1.3, and a+b=2, wherein M?aM?bN2 is a cubic crystal system.Type: GrantFiled: November 29, 2018Date of Patent: October 12, 2021Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin Lin, Li-Duan Tsai, Wen-Hsuan Chao, Yu-Ming Lin, Pin-Hsin Yang, Hsiao-Chun Huang, Chiu-Ping Huang, Jiunn-Nan Lin
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Publication number: 20210095383Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyZ2 is cubic crystal system or amorphous.Type: ApplicationFiled: November 30, 2020Publication date: April 1, 2021Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin LIN, Li-Duan TSAI, Wen-Hsuan CHAO, Chiu-Ping HUANG, Pin-Hsin YANG, Hsiao-Chun HUANG, Jiunn-Nan LIN, Yu-Ming LIN
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Patent number: 10914012Abstract: A membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and an anionic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer has a chemical structure of M?aM?bN2 or M?cM?dCe, wherein M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, M? is Nb, Ta, or a combination thereof, 0.7?a?1.7, 0.3?b?1.3, a+b=2, 0.24?c?1.7, 0.3?d?1.76, and 0.38?e?3.61, wherein M?aM?bN2 is a cubic crystal system and M?cM?d Ce is a cubic crystal system or amorphous.Type: GrantFiled: November 30, 2018Date of Patent: February 9, 2021Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin Lin, Li-Duan Tsai, Yu-Ming Lin, Wen-Hsuan Chao, Chiu-Ping Huang, Pin-Hsin Yang, Hsiao-Chun Huang, Jiunn-Nan Lin
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Patent number: 10914011Abstract: A method for hydrogen evolution by electrolysis includes soaking a membrane electrode assembly into an alkaline aqueous solution. The membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and a cationic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer, the second catalyst layer, or both of the above has a chemical structure of MxRuyN2, wherein M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyN2 is cubic crystal system or amorphous. The method also applies a voltage to the anode and the cathode for electrolysis of the alkaline aqueous solution, thereby producing hydrogen at the cathode and producing oxygen at the anode.Type: GrantFiled: November 30, 2018Date of Patent: February 9, 2021Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin Lin, Li-Duan Tsai, Yu-Ming Lin, Wen-Hsuan Chao, Chiu-Ping Huang, Pin-Hsin Yang, Hsiao-Chun Huang, Jiunn-Nan Lin
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Patent number: 10900133Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyZ2 is cubic crystal system or amorphous.Type: GrantFiled: November 30, 2018Date of Patent: January 26, 2021Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin Lin, Li-Duan Tsai, Wen-Hsuan Chao, Chiu-Ping Huang, Pin-Hsin Yang, Hsiao-Chun Huang, Jiunn-Nan Lin, Yu-Ming Lin
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Publication number: 20200173043Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0<x<1.3, 0.Type: ApplicationFiled: November 30, 2018Publication date: June 4, 2020Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin LIN, Li-Duan TSAI, Wen-Hsuan CHAO, Chiu-Ping HUANG, Pin-Hsin YANG, Hsiao-Chun HUANG, Jiunn-Nan LIN, Yu-Ming LIN
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Publication number: 20200173042Abstract: A method for manufacturing catalyst material is provided, which includes putting an M? target and an M? target into a nitrogen-containing atmosphere, in which M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M? is Nb, Ta, or a combination thereof. Powers are provided to the M? target and the M? target, respectively. Providing ions to bombard the M? target and the M? target to sputtering deposit M?aM?bN2 on a substrate, wherein 0.7?a?1.7, 0.3?b?1.3, and a+b=2, wherein M?aM?bN2 is a cubic crystal system.Type: ApplicationFiled: November 29, 2018Publication date: June 4, 2020Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin LIN, Li-Duan TSAI, Wen-Hsuan CHAO, Yu-Ming LIN, Pin-Hsin YANG, Hsiao-Chun HUANG, Chiu-Ping HUANG, Jiunn-Nan LIN
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Publication number: 20200173040Abstract: A membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and an anionic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer has a chemical structure of M?aM?bN2 or M?cM?dCe, wherein M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, M? is Nb, Ta, or a combination thereof, 0.7?a?1.7, 0.3?b?1.3, a+b=2, 0.24?c?1.7, 0.3?d?1.76, and 0.38?e?3.61, wherein M?aM?bN2 is a cubic crystal system and M?cM?d Ce is a cubic crystal system or amorphous.Type: ApplicationFiled: November 30, 2018Publication date: June 4, 2020Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin LIN, Li-Duan TSAI, Yu-Ming LIN, Wen-Hsuan CHAO, Chiu-Ping HUANG, Pin-Hsin YANG, Hsiao-Chun HUANG, Jiunn-Nan LIN
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Publication number: 20200173039Abstract: A method for hydrogen evolution by electrolysis includes soaking a membrane electrode assembly into an alkaline aqueous solution. The membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and a cationic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer, the second catalyst layer, or both of the above has a chemical structure of MxRuyN2, wherein M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyN2 is cubic crystal system or amorphous. The method also applies a voltage to the anode and the cathode for electrolysis of the alkaline aqueous solution, thereby producing hydrogen at the cathode and producing oxygen at the anode.Type: ApplicationFiled: November 30, 2018Publication date: June 4, 2020Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin Lin, Li-Duan Tsai, Yu-Ming Lin, Wen-Hsuan Chao, Chiu-Ping Huang, Pin-Hsin Yang, Hsiao-Chun Huang, Jiunn-Nan Lin
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Patent number: 10566631Abstract: An electrocatalyst is provided. The electrocatalyst includes Pd-containing metal nitride, wherein the metal is Co, Fe, Y, Lu, Sc, Ti, V, Cu, Ni, or a combination thereof. The molar ratio between the metal and Pd is greater than 0 and less than or equal to 0.8. A fuel cell utilizing the above electrocatalyst is further provided.Type: GrantFiled: December 22, 2016Date of Patent: February 18, 2020Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wen-Hsuan Chao, Chiung-Hui Huang, Ping-Hsing Yang, Shan-Haw Chiou, Keng-Yang Chen, Chien-Ming Lai, Li-Duan Tsai
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Publication number: 20180034065Abstract: An electrocatalyst is provided. The electrocatalyst includes Pd-containing metal nitride, wherein the metal is Co, Fe, Y, Lu, Sc, Ti, V, Cu, Ni, or a combination thereof. The molar ratio between the metal and Pd is greater than 0 and less than or equal to 0.8. A fuel cell utilizing the above electrocatalyst is further provided.Type: ApplicationFiled: December 22, 2016Publication date: February 1, 2018Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wen-Hsuan CHAO, Chiung-Hui HUANG, Ping-Hsing YANG, Shan-Haw CHIOU, Keng-Yang CHEN, Chien-Ming LAI, Li-Duan TSAI
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Patent number: 9401433Abstract: A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0<x?0.6, and 1.0?y?2.0. The p-type metal oxide semiconductor material can be applied in a transistor. The transistor may include a gate electrode, a channel layer separated from the gate electrode by a gate insulation layer, and a source electrode and a drain electrode contacting two sides of the channel layer, wherein the channel layer is the p-type metal oxide semiconductor material.Type: GrantFiled: December 29, 2015Date of Patent: July 26, 2016Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Shan-Haw Chiou, Tzu-Chi Chou, Wen-Hsuan Chao, Hsin-Ming Cheng, Mu-Tung Chang, Tien-Heng Huang, Ren-Fong Cai
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Patent number: 8778215Abstract: An embodiment of the present disclosure provides a thermoelectric composite material including: a thermoelectric matrix including a thermoelectric material; and a plurality of nano-carbon material units located in the thermoelectric matrix and spaced apart from each other, wherein a spacing between two neighboring nano-carbon material unit is about 50 nm to 2 ?m.Type: GrantFiled: May 3, 2012Date of Patent: July 15, 2014Assignee: Industrial Technology Research InstituteInventors: Shih-Chun Tseng, Wen-Hsuan Chao, Hsu-Shen Chu
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Publication number: 20130153819Abstract: An embodiment of the present disclosure provides a thermoelectric composite material including: a thermoelectric matrix including a thermoelectric material; and a plurality of nano-carbon material units located in the thermoelectric matrix and spaced apart from each other, wherein a spacing between two neighboring nano-carbon material unit is about 50 nm to 2 ?m.Type: ApplicationFiled: May 3, 2012Publication date: June 20, 2013Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Shih-Chun Tseng, Wen-Hsuan Chao, Hsu-Shen Chu
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Patent number: 7648783Abstract: A cadmium tin oxide (Cd1?xSnxO) multi-layer laminate is disclosed. The laminate comprises: a substrate; and a layer of Cd1?xSnxO which is not an epitaxial structure; wherein, the composition of Sn/(Cd+Sn) is 1˜20%. The method for producing the Cd1?xSnxO multi-layer laminate is also described here. The method comprises steps of: (a) providing metal or oxide targets for sputtering films of Cd1?xSnxO; and (b) sputtering films of Cd1?xSnxO from the targets onto the substrate; wherein the composition of Sn/(Cd+Sn) is 1˜20%.Type: GrantFiled: December 20, 2005Date of Patent: January 19, 2010Assignees: Industrial Research Technology Institute, Toth Information System, Inc.Inventors: Tien-Heng Huang, Ren-Jye Wu, Wen-Hsuan Chao, Lih-Ping Wang, Hung-Chiao Cheng, Jassy Shian-Jy Wang, Shu-Hei Wang, John R. Rodgers
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Publication number: 20090266788Abstract: The invention discloses a method for fabricating a conductive pattern on a flexible substrate. A flexible substrate having a conductive layer thereon is provided. A protective ink is screen printed on the conductive layer, wherein a portion of the conductive layer is exposed through the protective ink. The exposed portion of the conductive layer is removed by etching using the protective ink as a mask. The protective ink is then removed, thus providing a conductive pattern with a minimum line width of not greater than 150 ?m. The invention also discloses a composition for the protective ink.Type: ApplicationFiled: July 16, 2008Publication date: October 29, 2009Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Shinn-Jen CHANG, Feng-Mei Wu, Wen-Hsuan Chao, Shih-Hsien Liu
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Publication number: 20060141266Abstract: A cadmium tin oxide (Cd1-xSnxO) multi-layer laminate is disclosed. The laminate comprises: a substrate; and a layer of Cd1-xSnxO which is not an epitaxial structure; wherein, the composition of Sn/(Cd+Sn) is 1˜20%. The method for producing the Cd1-xSnxO multi-layer laminate is also described here. The method comprises steps of: (a) providing metal or oxide targets for sputtering films of Cd1-xSnxO; and (b) sputtering films of Cd1-xSnxO from the targets onto the substrate; wherein the composition of Sn/(Cd+Sn) is 1˜20%.Type: ApplicationFiled: December 20, 2005Publication date: June 29, 2006Applicants: Industrial technology Research Institute, Toth Information System, Inc.Inventors: Tien-Heng Huang, Ren-Jye Wu, Wen-Hsuan Chao, Lih-Ping Wang, Hung-Chiao Cheng, Jassy Wang, Shu-Hei Wang, John Rodgers
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Publication number: 20030073246Abstract: A triangular combinatorial chemchip and its preparation method are disclosed. Such a triangular combinatorial chemchip is a systematically arrangement of distinct defined regions formed by combinatorially sputtering with masks on the surface of a substrate. This arrangement coordinates compositions or concentrations of different species inside the chip. By using such triangular chemchips, one can quickly and efficiently screen adequate compositions and recipes of sample materials.Type: ApplicationFiled: June 4, 2002Publication date: April 17, 2003Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Jack Ting, Ren-Jye Wu, Wen-Hsuan Chao, Tien-Heng Huang