Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Abstract: A preparation method of shuttle spokes that includes these steps: providing a forging die comprising of an upper die and a lower die with the upper die and lower die having a joint angle of the shuttle spoke structure and an arch radius as well as a gap between the upper die and the lower die; inserting the blank of a round spoke into the gap between the upper die and lower die for stamping; using a plurality of nip molding rollers to eliminate the burr at both ends of the shuttle spoke structure; and applying a plurality of straightening rollers to straightness adjustment of the curved spoke body so that when the wheel parts are rolling, less air vortex can minimize air resistance.

Abstract: A spoke includes a spoke body that has two ends respectively forming a terminal section and the threaded section and includes a neck section arranged below the terminal section; a first flattened section set at a location below the neck section; and a second flattened section set at a location below the first flattened section in such a way that the second flattened section and the first flattened section are at different horizontal plane. In assembling the spoke body to a wheel hub and a wheel rim, the combination of the first flattened section and the second flattened section helps set the spoke body at a correct position and direction for assembly and force taking, whereby the first flattened section may absorb torsion and the second flattened section helps transfer tension and allows for change of the angle of bending.

Abstract: A spoke includes a spoke body that has two ends respectively forming a terminal section and the threaded section and includes a neck section arranged below the terminal section; a first flattened section set at a location below the neck section; and a second flattened section set at a location below the first flattened section in such a way that the second flattened section and the first flattened section are at different horizontal plane. In assembling the spoke body to a wheel hub and a wheel rim, the combination of the first flattened section and the second flattened section helps set the spoke body at a correct position and direction for assembly and force taking, whereby the first flattened section may absorb torsion and the second flattened section helps transfer tension and allows for change of the angle of bending.

Abstract: Spoke nipple structure for reducing rupture of spoke thread, which could maintain the straightness of the spoke thread by improving spoke and mated nipple; the spoke comprises: a spoke body as well as head and threaded portion set separately at both ends of the spoke body; the head is pulled or bent in practice to mate with the hub, and the threaded portion is provided with a threaded section of certain length; especially, a cyclic bulge is shaped on the spoke body adjacent to the threaded portion; the max. OD of the bulge is less than or equal to the ID of the nipple's large hole for tight coupling; the locking effect of cyclic bulge could maintain the straightness of the threaded portion and eliminate the bending point formed in the threaded portion of spoke arising from the transversal stress.

Abstract: An anti-shock spoke nipple comprises: a nipple body, having a big opening and a small opening connected with each other, with a groove formed on the side of the small opening; a big opening untapped area, located inside the big opening; a clamping area, located inside the small opening and on the lateral side of the groove; and a small opening tapped area, located inside the small opening and configured between the big opening and the clamping area; wherein, when the spoke goes into the clamping area, threads are formed inside the clamping area to clamp the spoke.

Abstract: A loose resistant bolt structure is disclosed which includes a bolt unit and a buffer portion. The bolt unit includes an intermediate portion, a head portion at an end of the intermediate portion, and a threaded portion at an opposite end of the intermediate portion. The buffer portion surrounds the threaded portion and is located adjacent to an end of the bolt unit to form a distinct pitch on the threaded portion. When the threaded portion engages with a nut, the buffer portion is drawn, shrunk or twisted, producing elastic stress and torsion force, thereby securing the threaded portion to the nut and resisting loose therebetween, and will be able to avoid an inner thread of the nut caused damage during assembly.

Abstract: A color wheel includes a motor and a color filter. The motor includes a rotating casing and a rotating shaft protruding outward from a center of a side of the rotating casing. An external thread is formed on the rotating shaft. The color filter defines an internal thread. The color filter is engaged with the motor by engaging the external thread of the rotating shaft with the internal thread of the color filter.

Abstract: A method for manufacturing a spoke with diverse diameters is disclosed. A wire is drawn, and at least two rollers sequentially press the wire to form diverse diameters with circular, oval or flat cross section. A multi-layer spoke with diverse diameters and good roundness is achieved. This method is efficient and reduces manufacturing cost.

Abstract: A method for increasing structural strength of spokes of a bicycle or a motorcycle, which adopts a mechanically processing measure to increase the structural strength of the bending section of the spoke. The spoke is many times compressed to process and harden the bending section of the spoke so as to enhance the metal strength (shearing strength) of the bending section. At the same time, the wire diameter of the spoke (cross-sectional area) is increased due to compression in accordance with the principle that shearing load=shearing strength×cross-sectional area. With least metal material and lower processing cost, the spoke can have highest structural strength.

Abstract: A method for increasing structural strength of spokes of a bicycle or a motorcycle, which adopts a mechanically processing measure to increase the structural strength of the bending section of the spoke. The spoke is many times compressed to process and harden the bending section of the spoke so as to enhance the metal strength (shearing strength) of the bending section. At the same time, the wire diameter of the spoke (cross-sectional area) is increased due to compression in accordance with the principle that shearing load=shearing strength×cross-sectional area. With least metal material and lower processing cost, the spoke can have highest structural strength.