Patents by Inventor Wen-Hu Hung

Wen-Hu Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • E-FUSE STRUCTURE FOR AN INTEGRATED CIRCUIT PRODUCT
    Publication number: 20150340319
    Abstract: An e-fuse device disclosed herein includes an anode and a cathode that are conductively coupled to the doped region formed in a substrate, wherein the anode includes a first metal silicide region positioned on the doped region and a first conductive metal-containing contact that is positioned above and coupled to the first metal silicide region, and the cathode includes a second metal silicide region positioned on the doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to the second metal silicide region. A method disclosed herein includes forming a doped region in a substrate for an e-fuse device and performing at least one common process operation to form a first conductive structure on the doped region of the e-fuse device and a second conductive structure on a source/drain region of a transistor.
    Type: Application
    Filed: August 4, 2015
    Publication date: November 26, 2015
    Inventors: Xiaoqiang Zhang, O Sung Kwon, Jianghu Yan, Wen-Hu Hung, Roderick Miller, HongLiang Shen
  • Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structure
    Patent number: 9159667
    Abstract: An e-fuse device disclosed herein includes an anode and a cathode that are conductively coupled to the doped region formed in a substrate, wherein the anode includes a first metal silicide region positioned on the doped region and a first conductive metal-containing contact that is positioned above and coupled to the first metal silicide region, and the cathode includes a second metal silicide region positioned on the doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to the second metal silicide region. A method disclosed herein includes forming a doped region in a substrate for an e-fuse device and performing at least one common process operation to form a first conductive structure on the doped region of the e-fuse device and a second conductive structure on a source/drain region of a transistor.
    Type: Grant
    Filed: July 26, 2013
    Date of Patent: October 13, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Xiaoqiang Zhang, O Sung Kwon, Jianghu Yan, Wen-Hu Hung, Roderick Miller, HongLiang Shen
  • METHODS OF FORMING AN E-FUSE FOR AN INTEGRATED CIRCUIT PRODUCT AND THE RESULTING E-FUSE STRUCTURE
    Publication number: 20150028447
    Abstract: An e-fuse device disclosed herein includes an anode and a cathode that are conductively coupled to the doped region formed in a substrate, wherein the anode includes a first metal silicide region positioned on the doped region and a first conductive metal-containing contact that is positioned above and coupled to the first metal silicide region, and the cathode includes a second metal silicide region positioned on the doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to the second metal silicide region. A method disclosed herein includes forming a doped region in a substrate for an e-fuse device and performing at least one common process operation to form a first conductive structure on the doped region of the e-fuse device and a second conductive structure on a source/drain region of a transistor.
    Type: Application
    Filed: July 26, 2013
    Publication date: January 29, 2015
    Applicant: GLOBAL FOUNDRIES Inc.
    Inventors: Xiaoqiang Zhang, O Sung Kwon, Jianghu Yan, Wen-Hu Hung, Roderick Miller, HongLiang Shen