Patents by Inventor Wen-Hua WEN

Wen-Hua WEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20240105504
    Abstract: A semiconductor device includes an insulating base layer, a semiconductor layer, an insulating layer, an isolation trench and a gettering site. The semiconductor layer and the insulating layer are disposed on the insulating base layer in sequence, and the isolation trench is disposed in the semiconductor layer and passes through the insulating layer. The isolation trench includes a first cross-section, a second cross-section and a third cross-section from top to bottom. The first cross-section is higher than the bottom surface of the insulating layer, and the second cross-section and the third cross-section are lower than the bottom surface of the insulating layer. The gettering site is disposed in the semiconductor layer and in contact with the isolation trench, and the vertex of the gettering site is lower than the second cross-section.
    Type: Application
    Filed: September 23, 2022
    Publication date: March 28, 2024
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Chrong-Jung Lin, Chia-Shen Liu, Wen-Hua Wen
  • Semiconductor device with conducting structure for reducing parasitic capacitance and improving RC delay
    Patent number: 10910469
    Abstract: A semiconductor device includes a substrate and a conducting structure. The substrate has a first conductivity type and includes a first isolation region, a first implant region, and a second implant region. The first isolation region is disposed along the circumference of the substrate. The first implant region has the first conductivity type, and the second implant region has a second conductivity type that is the opposite of the first conductivity type. The conducting structure is disposed on the substrate, and at least a portion of the conducting structure is located on the first isolation region.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: February 2, 2021
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Wen-Hua Wen, Chia-Shen Liu, Wen-Chung Chen, Chrong-Jung Lin
  • SEMICONDUCTOR DEVICE WITH CONDUCTING STRUCTURE FOR REDUCING PARASITIC CAPACITANCE AND IMPROVING RC DELAY
    Publication number: 20200388676
    Abstract: A semiconductor device includes a substrate and a conducting structure. The substrate has a first conductivity type and includes a first isolation region, a first implant region, and a second implant region. The first isolation region is disposed along the circumference of the substrate. The first implant region has the first conductivity type, and the second implant region has a second conductivity type that is the opposite of the first conductivity type. The conducting structure is disposed on the substrate, and at least a portion of the conducting structure is located on the first isolation region.
    Type: Application
    Filed: June 7, 2019
    Publication date: December 10, 2020
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Wen-Hua WEN, Chia-Shen LIU, Wen-Chung CHEN, Chrong-Jung LIN