Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a first substrate comprising a first semiconductor material. A first light sensor is disposed within the first substrate. The first light sensor is configured to absorb electromagnetic radiation within a first wavelength range. A second light sensor is disposed within an absorption structure underlying the first substrate. The second light sensor is configured to absorb electromagnetic radiation within a second wavelength range different from the first wavelength range. The absorption structure underlies the first light sensor and comprises a second semiconductor material different from the first semiconductor material.

Abstract: Some embodiments relate to an integrated circuit light sensor device. The integrated circuit light sensor device includes a semiconductor substrate, as well as a plurality of first light-absorption regions and a plurality of second light-absorption regions located in the semiconductor substrate. Each of the first light-absorption regions includes an implantation region of the semiconductor substrate. The implantation region and the semiconductor substrate form at least a portion of a corresponding one of a plurality of first photodetectors for a first light wavelength band. Each of the second light-absorption regions includes a semiconductor material different from the semiconductor substrate. The semiconductor material forms at least a portion of a corresponding one of a plurality of second photodetectors for a second light wavelength band different from the first light wavelength band.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a first substrate comprising a first semiconductor material. A first light sensor is disposed within the first substrate. The first light sensor is configured to absorb electromagnetic radiation within a first wavelength range. A second light sensor is disposed within an absorption structure underlying the first substrate. The second light sensor is configured to absorb electromagnetic radiation within a second wavelength range different from the first wavelength range. The absorption structure underlies the first light sensor and comprises a second semiconductor material different from the first semiconductor material.

Abstract: A three-in-one RGB mini-LED device includes a substrate, a second electrical semiconductor layer, a plurality of multiple-quantum well layers, a plurality of first electrical semiconductor layers, and a plurality of mirrors. The second electrical semiconductor layer is disposed on the substrate. The plurality of multiple-quantum well layers are disposed on the second electrical semiconductor layer. An area of each of the plurality of multiple-quantum well layers is smaller than an area of the second electrical semiconductor layer, and a region on the second semiconductor layer is not covered by the plurality of multiple-quantum well layers.

Abstract: Image sensors and methods of forming the same are provided. An image sensor according to the present disclosure includes a silicon substrate, a germanium region disposed in the silicon substrate, a doped semiconductor isolation layer disposed between the silicon substrate and the germanium region, a heavily p-doped region disposed on the germanium region, a heavily n-doped region disposed on the silicon substrate, a first n-type well disposed immediately below the germanium region, a second n-type well disposed immediately below the heavily n-doped region, and a deep n-type well disposed below and in contact with the first n-type well and the second n-type well.

Abstract: A three-in-one RGB mini-LED device includes a substrate, a second electrical semiconductor layer, a plurality of multiple-quantum well layers, a plurality of first electrical semiconductor layers, and a plurality of mirrors. The second electrical semiconductor layer is disposed on the substrate. The plurality of multiple-quantum well layers are disposed on the second electrical semiconductor layer. An area of each of the plurality of multiple-quantum well layers is smaller than an area of the second electrical semiconductor layer, and a region on the second semiconductor layer is not covered by the plurality of multiple-quantum well layers.

Abstract: The method of operation of a meter includes placing a sample on a test strip, assigning a first electrode of the test strip to be a counter electrode, applying a first signal to the test strip during a first period of time, assigning a second electrode of the test strip to be the counter electrode, applying a second signal to the test strip to measure the concentration of an analyte in the sample.

Abstract: The method of operation of a meter includes placing a sample on a test strip, assigning a first electrode of the test strip to be a counter electrode, applying a first signal to the test strip during a first period of time, assigning a second electrode of the test strip to be the counter electrode, applying a second signal to the test strip to measure the concentration of an analyte in the sample.

Abstract: The present invention discloses a biological measuring device with auto coding capabilities. In accordance with one embodiment of the present invention, the biological measuring device with auto coding capabilities may include a test strip associated with a code pattern; and a code reader electrically coupled to the test strip to read the code pattern, wherein the code reader is configured to read an output from the code pattern consisted of a first logical value, a second logical value, and a third logical value.

Abstract: A method of a test strip detecting concentration of an analyte of a sample includes placing the sample in a reaction region of the test strip, wherein the analyte reacts with an enzyme to generate a plurality of electrons, and the plurality of electrons are transferred to a working electrode of the reaction region through a mediator; applying an electrical signal to the working electrode; measuring a first current through the working electrode during a first period; the mediator generating an intermediate according to the electrical signal during a second period; measuring a second current through the working electrode during a third period; calculating initial concentration of the analyte according to the first current; calculating a diffusion factor of the intermediate in the sample according to the second current; and correcting the initial concentration to generate new concentration of the analyte according to the diffusion factor.

Abstract: The present invention discloses a biological measuring device with auto coding capabilities. In accordance with one embodiment of the present invention, the biological measuring device with auto coding capabilities may include a test strip associated with a code pattern; and a code reader electrically coupled to the test strip to read the code pattern, wherein the code reader is configured to read an output from the code pattern consisted of a first logical value, a second logical value, and a third logical value.