Patents by Inventor Wen-Hun Tung

Wen-Hun Tung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR PREVENTING OR REDUCING ANODIC CU CORROSION DURING CMP
    Publication number: 20030211744
    Abstract: A method and apparatus for implementing the method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process the method providing at least one semiconductor wafer polishing surface including copper filled anisotropically etched features; polishing the at least one semiconductor wafer polishing surface according to a CMP process having a polishing pad surface contacting the at least one semiconductor wafer polishing surface at least a portion of the polishing pad in electrically conductive communication with a conductive polishing platen; and, providing at least one electrically conductive pathway from the conductive polishing platen.
    Type: Application
    Filed: May 7, 2002
    Publication date: November 13, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsu Shih, Kun Ku Hung, Wen-Hun Tung, Wen-Chih Chiou
  • Method for preventing or reducing anodic Cu corrosion during CMP
    Patent number: 6638868
    Abstract: A method and apparatus for implementing the method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process the method providing at least one semiconductor wafer polishing surface including copper filled anisotropically etched features; polishing the at least one semiconductor wafer polishing surface according to a CMP process having a polishing pad surface contacting the at least one it semiconductor wafer polishing surface at least a portion of the polishing pad in electrically conductive communication with a conductive polishing platen; and, providing at least one electrically conductive pathway from the conductive polishing platen.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: October 28, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: Tsu Shih, Kun Ku Hung, Wen-Hun Tung, Wen-Chin Chiou