Abstract: An integrated antenna package structure includes a first redistribution structure, a first chip, a heat dissipation structure, a second chip, and an antenna structure. The first chip is located on a first side of the first redistribution structure, and is electrically connected to the first redistribution structure. The heat dissipation structure is thermally connected to the first chip, and the first chip is located between the heat dissipation structure and the first redistribution structure. The second chip is located on a second side of the first redistribution structure opposite to the first side, and is electrically connected to the first redistribution structure. The antenna structure is electrically connected to the first redistribution structure.

Abstract: A chip package structure including a heat dissipation base, a first redistribution layer, a second redistribution layer, at least one chip, at least one metal stack, a plurality of conductive structures, and an encapsulant is provided. The second redistribution layer is disposed on the heat dissipation base and thermally coupled to the heat dissipation base. The chip, the metal stack, and the conductive structures are disposed between the second redistribution layer and the first redistribution layer. An active surface of the chip is electrically connected to the first redistribution layer and an inactive surface of the chip is thermally coupled to the second redistribution layer via the metal stack. The first redistribution layer is electrically connected to the second redistribution layer via the conductive structures. The encapsulant is filled between the second redistribution layer and the first redistribution layer. A manufacturing method of a chip package structure is also provided.

Abstract: An integrated antenna package structure includes a first redistribution structure, a first chip, a heat dissipation structure, a second chip, and an antenna structure. The first chip is located on a first side of the first redistribution structure, and is electrically connected to the first redistribution structure. The heat dissipation structure is thermally connected to the first chip, and the first chip is located between the heat dissipation structure and the first redistribution structure. The second chip is located on a second side of the first redistribution structure opposite to the first side, and is electrically connected to the first redistribution structure. The antenna structure is electrically connected to the first redistribution structure.

Abstract: A light emitting device including a substrate, a first electrode, a light emitting layer, a second electrode, a heat shrinkable film and a first adhesive layer is provided. The first electrode is disposed on the substrate. The light emitting layer is disposed on the first electrode. The second electrode is disposed on the light emitting layer. The first electrode, the light emitting layer, and the second electrode are sequentially stacked on the substrate to form a light emitting cell. The heat shrinkable film is disposed on the light emitting cell. The first adhesive layer is disposed between the heat shrinkable film and the second electrode.

Abstract: A light emitting device including a substrate, a first electrode, a light emitting layer, a second electrode, a heat shrinkable film and a first adhesive layer is provided. The first electrode is disposed on the substrate. The light emitting layer is disposed on the first electrode. The second electrode is disposed on the light emitting layer. The first electrode, the light emitting layer, and the second electrode are sequentially stacked on the substrate to form a light emitting cell. The heat shrinkable film is disposed on the light emitting cell. The first adhesive layer is disposed between the heat shrinkable film and the second electrode.

Abstract: Provided is a barrier film which includes an organo-silicon polymeric composition having Si3—N4 bonds and Si—OH bonds. The peak height of Si4—N4 bonds in an infrared absorption spectrum is represented by A, and the peak height of Si—OH bonds in the infrared absorption spectrum is represented by B; and a ratio of A to B is greater than 2.