Abstract: A field-effect transistor includes a conduction channel between a source terminal and a drain terminal, which channel employs holes as the charge carriers. The conduction channel is disposed within a layer of material comprising a group III-V compound of the periodic table and having a crystalline lattice structure which is stressed in two dimensions by means of epitaxial growth upon a thicker and rigid supporting layer comprising a different group III-V compound having a larger lattice spacing. The layer having the conduction channel is relatively thin being on the order of a few electron wavelength in thickness. The stretching of the layer having the conduction channel shift the energy levels of holes therein to remove the degenerate state thereof, thereby elevating light holes to an energy level characterized by increased mobility.