Patents by Inventor Wen Jan Lin

Wen Jan Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Two step thermal treatment procedure applied to polycide structures deposited using dichlorosilane as a reactant
    Patent number: 5923988
    Abstract: A process for fabricating a polycide SAC structure, for a MOSFET device, has been developed. This process features a polycide SAC structure, comprised of tungsten silicide on in situ doped polysilicon, using tungsten hexafluoride and dichlorosilane as reactants for deposition of tungsten silicide. A first thermal anneal treatment is performed prior to polycide patterning, supplying protection to exposed tungsten silicide sides, during the patterning procedure. A second thermal anneal treatment is performed after polycide patterning, and prior to a silicon oxide deposition, offering protection to the exposed top surface of tungsten silicide, during the silicon oxide deposition.
    Type: Grant
    Filed: May 15, 1998
    Date of Patent: July 13, 1999
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Hsien Cheng, Chi-Di An, Wen Jan Lin, Hung-Che Liao, Jer-Yuan Sheu