Abstract: A novel scheme for screening weak memory cell includes a cell coupled to a leakage stress delivery circuitry (LSDC), which, in turn, is coupled to an induced leakage adjustment control (ILAC). The LSDC includes a combination of PMOS transistors, NMOS transistors or both PMOS and NMOS transistors that are controlled by a plurality of stress inducing signals. The PMOS and/or NMOS transistors of the LSDC are coupled to a pair of complementary data lines. The complementary data lines are inputs to a sense amplifier and are outputs of a write driver. The ILAC controls the quantity of the leakage stress applied through the LSDC to the pair of complementary data lines. The ILAC further includes a leakage varying circuitry that is configured to adjust the leakage stress applied to the complementary data lines through the LSDC.

Abstract: A method is provided for accurately determining the propagation delay of a gate under consideration in a static timing analyzer. This is accomplished by determining both the output load and input rise time of the gate under consideration. These values are then compared with a load versus rise time grid having previously determined values of propagation delay (points) for specified combinations of load and input rise time. These points are then used to interpolate a value of propagation delay for the gate under consideration by an interpolation technique that accounts for at least one of the following non-linear effects: the feed forward capacitance of a gate, soft switching, gate resistance, source and drain resistance, and/or other non-linear effects. The method accounts for each non-linear effect by imparting a corresponding component to propagation delay only in that range of output load and input rise time for which that non-linear effect is most pronounced.