Abstract: A process for fabricating a micro-optical lens comprises forming a wall post structure on a substrate, coating with a polymeric film on the wall post, then making it adhering over both sides of the wall post structure by a transverse etching on the substrate around the base of posts. After an isolating process and a proper heating treatment, said polymeric film cohering to form a plano-convex lens. By controlling the respective amount of the polymeric film on both sides of said wall post structure, the polymeric film can combine with the wall post structure to form a composite material biconvex micro-lens, plano-convex micro-lens and the like. Alternatively, a single material micro-lens can be formed by imaging the profile of the polymeric micro-lens on the wall post structure via an etching process.

Abstract: A process for fabricating a micro-optical lens comprises forming a wall post structure on a substrate, coating with a high molecular weight polymeric film on the wall post, then making it adhering over both sides of the wall post structure by a transverse etching on the substrate around the base of posts. After an isolating process and a proper heating treatment, said high molecular weight polymeric film cohering to form a plano-convex lens. By controlling the respective amount of the high molecular weight polymeric film on both sides of said wall post structure, the high molecular weight polymeric film can combine with the wall post structure to form a composite material biconvex micro-lens, plano-convex micro-lens and the like. Alternatively, a single material micro-lens can be formed by imaging the profile of the high molecular weight polymeric micro-lens on the wall post structure via an etching process.

Abstract: An edge-coupled photodetector, especially a compound semiconductor edge-coupled photodetectors, has a light funnel integrated right in front of the coupling aperture for enhancing the optical coupling efficiency. The light funnel is formed utilizing either a wet etched, crystallographically defined semiconductor slope or a dry etched, resist-profile-defined semiconductor slope covered by the planarized dielectrics. The funnel internals can be partially or fully metallized for total mirror reflection. The lightwave entering the funnel and propagating along the optical axis converges through mirror reflection or total internal reflection. Through such an invention, the edge-coupled photodetector can have both high operation speed and high quantum efficiency with enlarged alignment tolerance.

Abstract: The present invention is related to a method for fabricating a surface-emitting laser diode with a metal reflector. It is mainly the use of a combination of a metal reflector and wafer bonding technology to replace the traditional epiwafer process or high-temperature high-pressure wafer bonding technology in fabricating VCSEL Bragg Reflector. The metal reflector has high reflectance with its material selected to form ohmic contact with VCSEL material. Besides, the substrate for the metal reflector can be selected for cheap price and good heat dissipation. Further advantages include simple process, low production cost and good VCSEL characteristic etc.

Abstract: The present invention is related to a method for fabricating a surface-emitting laser diode with a metal reflector. It is mainly the use of a combination of a metal reflector and wafer bonding technology to replace the traditional epiwafer process or high-temperature high-pressure wafer bonding technology in fabricating VCSEL Bragg Reflector. The metal reflector has high reflectance with its material selected to form ohmic contact with VCSEL material. Besides, the substrate for the metal reflector can be selected for cheap price and good heat dissipation. Further advantages include simple process, low production cost and good VCSEL characteristic etc.

Abstract: A self-aligned fabrication method utilizes dielectric planarization process for fabricating ridge waveguide semiconductor lasers. The dielectric planarization process starts with depositing a thick dielectric film onto the ridge-structured semiconductor wafer surface, and then the resulting corrugated dielectric surface is polished into a flat surface in a self-terminated manner. This dielectric flat surface is able to uniformly expose its semiconductor ridge tops by an overall etch-back process.

Abstract: A bandwidth enhancement method by adding a peaking capacitor to a transimpedance amplifier for creating peaking effect is to add a peaking capacitor to a transimpedance amplifier for obtaining an extra pole that can alter circuit phase and enhance bandwidth of the transimpedance amplifier without changing the framework and DC gain of the original amplifier circuit.