Patents by Inventor Wen-Jeng Hsueh

Wen-Jeng Hsueh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Robust conjugated-symmetric optical apparatus and design method thereof
    Patent number: 11520104
    Abstract: A robust conjugate symmetric optical apparatus is disclosed. The robust conjugate symmetric optical apparatus comprises a first optical cell set and a second optical cell set. The first optical cell set includes a first plurality of cells, each of which includes a first left half cell and a first right half cell, and the respective first right half cell and the corresponding first left half cells form a first symmetric structure therebetween.
    Type: Grant
    Filed: January 14, 2021
    Date of Patent: December 6, 2022
    Assignee: National Taiwan University
    Inventors: Wen-Jeng Hsueh, Yu-Chuan Lin, Shih-Han Chou
  • ROBUST CONJUGATED-SYMMETRIC OPTICAL APPARATUS AND DESIGN METHOD THEREOF
    Publication number: 20210223472
    Abstract: A robust conjugate symmetric optical apparatus is disclosed. The robust conjugate symmetric optical apparatus comprises a first optical cell set and a second optical cell set. The first optical cell set includes a first plurality of cells, each of which includes a first left half cell and a first right half cell, and the respective first right half cell and the corresponding first left half cells form a first symmetric structure therebetween.
    Type: Application
    Filed: January 14, 2021
    Publication date: July 22, 2021
    Inventors: Wen-Jeng Hsueh, Yu-Chuan Lin, Shih-Han Chou
  • Method and device for huge magnetoresistance in graphene-based magnetic tunnel junctions with segmented potentials
    Patent number: 9537089
    Abstract: A graphene-based magnetic tunnel junction is disclosed. The magnetic tunnel junction can enhance the tunnel magnetoresistance ratio and a device including the magnetic tunnel junction. The magnetic tunnel junction includes: a pinned layer; a free layer; and a graphene with segmented potentials configured between the pinned layer and the free layer. The magnetic tunnel junction may be a series or parallel connection of the above-mentioned basic form. The device including a magnetic tunnel junction may be a magnetic random access memory bit cell, a magnetic tunnel junction transistor device, a magnetic field sensor, etc.
    Type: Grant
    Filed: October 20, 2015
    Date of Patent: January 3, 2017
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Wen-Jeng Hsueh, Chang-Hung Chen
  • Magnetic tunnel junction with superlattice barriers
    Patent number: 9437655
    Abstract: A magnetic tunnel junction is provided. The magnetic tunnel junction can enhance the tunnel magnetoresistance ratio and a device including the magnetic tunnel junction. The magnetic tunnel junction includes: a pinned layer; a free layer; and a superlattice barrier, the barrier configured between the pinned layer and the free layer. The magnetic tunnel junction may be a series or parallel connection of the above-mentioned basic form. The device including a magnetic tunnel junction may be a magnetic random access memory bit cell, a magnetic tunnel junction transistor device, a magnetic field sensor, etc.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: September 6, 2016
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Wen-Jeng Hsueh, Chang-Hung Chen
  • Method and Device for Huge Magnetoresistance in Graphene-Based Magnetic Tunnel Junctions with Segmented Potentials
    Publication number: 20160111633
    Abstract: A graphene-based magnetic tunnel junction is disclosed. The magnetic tunnel junction can enhance the tunnel magnetoresistance ratio and a device including the magnetic tunnel junction. The magnetic tunnel junction includes: a pinned layer; a free layer; and a graphene with segmented potentials configured between the pinned layer and the free layer. The magnetic tunnel junction may be a series or parallel connection of the above-mentioned basic form. The device including a magnetic tunnel junction may be a magnetic random access memory bit cell, a magnetic tunnel junction transistor device, a magnetic field sensor, etc.
    Type: Application
    Filed: October 20, 2015
    Publication date: April 21, 2016
    Inventors: Wen-Jeng Hsueh, Chang-Hung Chen
  • MAGNETIC TUNNEL JUNCTION WITH SUPERLATTICE BARRIERS
    Publication number: 20150214275
    Abstract: A magnetic tunnel junction is provided. The magnetic tunnel junction can enhance the tunnel magnetoresistance ratio and a device including the magnetic tunnel junction. The magnetic tunnel junction includes: a pinned layer; a free layer; and a superlattice barrier, the barrier configured between the pinned layer and the free layer. The magnetic tunnel junction may be a series or parallel connection of the above-mentioned basic form. The device including a magnetic tunnel junction may be a magnetic random access memory bit cell, a magnetic tunnel junction transistor device, a magnetic field sensor, etc.
    Type: Application
    Filed: August 15, 2014
    Publication date: July 30, 2015
    Inventors: Wen-Jeng Hsueh, Chang-Hung Chen