Abstract: A method for fabricating a landing pad is described in which a transistor is formed on the substrate, wherein the transistor comprises a gate and source/drain regions at both sides of the gate in the substrate. A cap layer and a spacer are formed on the gate and at the sidewall of the gate respectively. A protective layer is formed to cover the substrate. The protective layer is then defined to form an opening to expose the source/drain region. A polysilicon landing pad is then formed in the opening and on the protective layer at the periphery of the opening. Silicidation is then conducted on the polysilicon landing pad to form a metal silicide landing pad and to destroy any native oxide at the source/drain region.

Abstract: The invention provides a manufacturing method of forming a bottom plate for a capacitor on a substrate, wherein the substrate comprises a MOS transistor having a gate and a pair of source/drain regions. A crown-liked conductive plate is formed over an insulation oxide layer and a contact plug. The crown-liked conductive plate penetrates the insulation layer and the stop layer, wherein the bottom of the crown-like conductive plate is electrically connected to the contact plug. The crown-like conductive plate, served as the bottom plate for a DRAM capacitor, is composed of tungsten silicide or a combination of a tungsten nitride layer and a tungsten layer.

Abstract: A method for forming inter-metal dielectric is disclosed. The method normally includes the following steps. First of all, a semiconductor wafer is provided. Then, forming a first metal layer on a portion of the substrate is carried out. A first dielectric layer is formed on the first metal layer and the substrate. Consequentially a tantalum nitride layer is formed on the first dielectric layer. A first photoresist layer can be formed on the tantalum nitride layer, especially first photoresist layer has a first pattern defining a trench area located over the first metal layer, and has a second pattern defining an etch stop area. The tantalum nitride layer will be etched by the first photoresist layer. A second dielectric layer is formed over the etched tantalum nitride layer and the first dielectric layer.

Abstract: An improved formation method produces a metallic fuse capable of lowering the laser power needed for carrying out circuit repair. The method includes forming a metallic fuse when the penultimate metallic layer is formed. Since the metallic fuse is not too far away from the top surface, the power of the laser beam necessary for repairing the circuit can be moderate. Furthermore, the laser beam is more focused because it travels a shorter distance to reach the fuse, thereby avoiding unnecessary dispersion through intermediate material. Moreover, since the metallic fuse itself is not too thick, only a low-power laser beam is needed to melt the metallic fuse.

Abstract: A solid state memory fabrication method of DRAM chips with a self-alignment of field plate/BL isolation process includes using oxide-poly-oxide etch followed by oxidation or sidewall deposition (LPTEOS) to isolate the field plate and BL. This process uses a first etchant and a second etchant in etching the BL/N.sup.+ contact in the fabrication process. During the etch of BL/N.sup.+ contact (2C etch), a low selectivity etchant etches away Ploy-3 first. This first etchant is applied for approximately one hundred eighty seconds. And then a second etchant process is performed using a high Si selectivity etchant, which etches a way the residual oxide. The second etchant is applied for approximately ninety seconds. The exposed poly on the sidewall is isolated from the contact hole by oxidation or deposition (LPTEOS). The oxide formed on the substrate during oxidation is etched away by anisotropic etch. The self-alignment of BL/3P is thus achieved.

Abstract: A copolyamide composition prepared from hexamethylene diamine and either mixtures of adipic acid and terephthalic acid, or mixtures of adipic acid, terephthalic acid and isophthalic acid, has a melting point below 320.degree. C., a glass transition temperature between 100.degree. C. and 120.degree. C. and physical properties similar to nylon 66.

Abstract: A copolyamide composition prepared from hexamethylene diamine and mixtures of adipic acid, terephthalic acid and isophthalic acid, has a melting point below 300.degree. C., a glass transition temperature between 100.degree. C. and 130.degree. C. and physical properties similar to nylon 66.

Abstract: A catalyst composition for use in the preparation of poly(butylene terephthalate) from dimethyl terephthalate, comprising: (a) a titanium compound primary catalyst, from about 0.0005 PHR to about 5 PHR; (b) a first co-catalyst containing at least one of Zn, Co, Mn, Mg, Ca, or Pb series compounds, between about 0.0001 PHR and 5 PHR; and (c) a second co-catalyst containing an alkali metal phosphate, an alkali metal phosphite, an alkali hypophosphite, or an alkali metal polyphosphate between about 0.0001 PHR and 5 PHR; wherein PHR represents parts of the primary catalyst or the co-catalyst per one hundred parts, by weight, of dimethyl terephthalate. Preferred titanium compounds include tetrabutyl titanate or tetra(isopropyl)titanate. Preferred metal compounds for use as first co-catalyst are metal acetates. The alkali metal phosphate can be a phosphate salt containing one, two, or three metal groups; and the alkali metal phosphite can be a phosphite salt containing one or two metal groups.

Abstract: A catalyst composition for use in the preparation of poly(butylene terephthalate) from dimethyl terephthalate, comprising: (a) a titanium compound primary catalyst, from about 0.01 PHR to about 1 PHR; and (b) an alkali metal phosphate or alkali metal phosphite co-catalyst, from about 0.001 PHR to about 1 PHR; wherein PHR represents parts of the primary catalyst or the co-catalyst per one hundred parts, by weight, of dimethyl terephthalate. Preferred titanium compounds include tetrabutyl titanate or tetra(isopropyl) titanate; the alkali metal phosphate can be a phosphate salt containing one, two, or three metal groups; and the alkali metal phosphite can be a phosphite salt containing one or two metal groups. With this catalyst composition, the transesterification rate was increased by 10 percent or more. Furthermore, the reaction product poly(butylene terephthalate) shows an increased intrinsic viscosity over those without the co-catalyst, indicating a greater degree of polymerization.