Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode layer on the p-type semiconductor layer, and patterning the gate electrode layer to form a gate electrode. Preferably, the gate electrode includes an inclined sidewall.

Abstract: An apparatus for cleaning a glass sheet moving along a conveyed direction is disclosed herein. The apparatus comprises a first plurality of spraying devices coupled to a water supply and positioned away from a first surface of the glass sheet in a first angle measured from the first surface of the glass sheet, and a control unit configured to supply water from the water supply into the first plurality of spraying devices such that the first plurality of spraying devices spray water from the water supply in a first plurality of spraying sections at the first angle over an edge of the glass sheet, thereby forming a first cleaning zone on the first surface of the glass sheet.