Patents by Inventor Wen-Jia HSIEH
Wen-Jia HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11694924Abstract: A device includes an isolation structure, a source/drain epi-layer, a contact, a first dielectric layer, and a second dielectric layer. The isolation structure is embedded in a substrate. The source/drain epi-layer is embedded in the substrate and is in contact with the isolation structure. The contact is over the source/drain epi-layer. The first dielectric layer wraps the contact. The second dielectric layer is between the contact and the first dielectric layer. The first and second dielectric layers include different materials, and a portion of the source/drain epi-layer is directly between a bottom portion of the second dielectric layer and a top portion of the isolation structure.Type: GrantFiled: July 1, 2021Date of Patent: July 4, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Jia Hsieh, Long-Jie Hong, Chih-Lin Wang, Kang-Min Kuo
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Publication number: 20220231143Abstract: A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over the semiconductor substrate, a first work function metal layer disposed over the gate dielectric layer and lining a bottom surface of an inner sidewall of the spacer, and a filling metal partially wrapped by the first work function metal layer. The filling metal includes a first portion and a second portion, wherein the first portion is between the second portion and the semiconductor substrate, and the second portion is wider than the first portion.Type: ApplicationFiled: April 4, 2022Publication date: July 21, 2022Inventors: Bo-Wen HSIEH, Yi-Chun LO, Wen-Jia HSIEH
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Patent number: 11296201Abstract: A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over the semiconductor substrate, a first work function metal layer disposed over the gate dielectric layer and lining a bottom surface of an inner sidewall of the spacer, and a filling metal partially wrapped by the first work function metal layer. The filling metal includes a first portion and a second portion, wherein the first portion is between the second portion and the semiconductor substrate, and the second portion is wider than the first portion.Type: GrantFiled: June 15, 2020Date of Patent: April 5, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Bo-Wen Hsieh, Yi-Chun Lo, Wen-Jia Hsieh
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Publication number: 20210335662Abstract: A device includes an isolation structure, a source/drain epi-layer, a contact, a first dielectric layer, and a second dielectric layer. The isolation structure is embedded in a substrate. The source/drain epi-layer is embedded in the substrate and is in contact with the isolation structure. The contact is over the source/drain epi-layer. The first dielectric layer wraps the contact. The second dielectric layer is between the contact and the first dielectric layer. The first and second dielectric layers include different materials, and a portion of the source/drain epi-layer is directly between a bottom portion of the second dielectric layer and a top portion of the isolation structure.Type: ApplicationFiled: July 1, 2021Publication date: October 28, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Jia HSIEH, Long-Jie HONG, Chih-Lin WANG, Kang-Min KUO
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Publication number: 20210305387Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate. The gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below the gate electrode structure. In addition, the first portion of the gate electrode structure is located over the second portion of the gate electrode structure, and a width of a top surface of the first portion of the gate electrode structure is greater than a width of a bottom surface of the second portion of the gate electrode structure.Type: ApplicationFiled: June 14, 2021Publication date: September 30, 2021Inventors: Bo-Wen HSIEH, Wen-Jia HSIEH, Yi-Chun LO, Mi-Hua LIN
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Patent number: 11056384Abstract: The semiconductor device includes a substrate, an epi-layer, a first etch stop layer, an interlayer dielectric (ILD) layer, a second etch stop layer, a protective layer, a liner, a silicide cap and a contact plug. The substrate has a first portion and a second portion. The epi-layer is disposed in the first portion. The first etch stop layer is disposed on the second portion. The ILD layer is disposed on the first etch stop layer. The second etch stop layer is disposed on the ILD layer, in which the first etch stop layer, the ILD layer and the second etch stop layer form a sidewall surrounding the first portion. The protective layer is disposed on the sidewall. The liner is disposed on the protective layer. The silicide cap is disposed on the epi-layer. The contact plug is disposed on the silicide cap and surrounded by the liner.Type: GrantFiled: November 8, 2019Date of Patent: July 6, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Jia Hsieh, Long-Jie Hong, Chih-Lin Wang, Kang-Min Kuo
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Patent number: 11038035Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate. The gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below the gate electrode structure. In addition, the first portion of the gate electrode structure is located over the second portion of the gate electrode structure, and a width of a top surface of the first portion of the gate electrode structure is greater than a width of a bottom surface of the second portion of the gate electrode structure.Type: GrantFiled: November 20, 2018Date of Patent: June 15, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Bo-Wen Hsieh, Wen-Jia Hsieh, Yi-Chun Lo, Mi-Hua Lin
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Publication number: 20200312972Abstract: A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over the semiconductor substrate, a first work function metal layer disposed over the gate dielectric layer and lining a bottom surface of an inner sidewall of the spacer, and a filling metal partially wrapped by the first work function metal layer. The filling metal includes a first portion and a second portion, wherein the first portion is between the second portion and the semiconductor substrate, and the second portion is wider than the first portion.Type: ApplicationFiled: June 15, 2020Publication date: October 1, 2020Inventors: Bo-Wen HSIEH, Yi-Chun LO, Wen-Jia HSIEH
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Patent number: 10686049Abstract: A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over the semiconductor substrate, a first work function metal layer disposed over the gate dielectric layer and lining a bottom surface of an inner sidewall of the spacer, and a filling metal partially wrapped by the first work function metal layer. The filling metal includes a first portion and a second portion, wherein the first portion is between the second portion and the semiconductor substrate, and the second portion is wider than the first portion.Type: GrantFiled: June 3, 2019Date of Patent: June 16, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Bo-Wen Hsieh, Yi-Chun Lo, Wen-Jia Hsieh
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Publication number: 20200075401Abstract: The semiconductor device includes a substrate, an epi-layer, a first etch stop layer, an interlayer dielectric (ILD) layer, a second etch stop layer, a protective layer, a liner, a silicide cap and a contact plug. The substrate has a first portion and a second portion. The epi-layer is disposed in the first portion. The first etch stop layer is disposed on the second portion. The ILD layer is disposed on the first etch stop layer. The second etch stop layer is disposed on the ILD layer, in which the first etch stop layer, the ILD layer and the second etch stop layer form a sidewall surrounding the first portion. The protective layer is disposed on the sidewall. The liner is disposed on the protective layer. The silicide cap is disposed on the epi-layer. The contact plug is disposed on the silicide cap and surrounded by the liner.Type: ApplicationFiled: November 8, 2019Publication date: March 5, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Jia HSIEH, Long-Jie HONG, Chih-Lin WANG, Kang-Min KUO
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Patent number: 10475699Abstract: The semiconductor device includes a substrate, an epi-layer, a first etch stop layer, an interlayer dielectric (ILD) layer, a second etch stop layer, a protective layer, a liner, a silicide cap and a contact plug. The substrate has a first portion and a second portion. The epi-layer is disposed in the first portion. The first etch stop layer is disposed on the second portion. The ILD layer is disposed on the first etch stop layer. The second etch stop layer is disposed on the ILD layer, in which the first etch stop layer, the ILD layer and the second etch stop layer form a sidewall surrounding the first portion. The protective layer is disposed on the sidewall. The liner is disposed on the protective layer. The silicide cap is disposed on the epi-layer. The contact plug is disposed on the silicide cap and surrounded by the liner.Type: GrantFiled: February 5, 2018Date of Patent: November 12, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Jia Hsieh, Long-Jie Hong, Chih-Lin Wang, Kang-Min Kuo
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Publication number: 20190288085Abstract: A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over the semiconductor substrate, a first work function metal layer disposed over the gate dielectric layer and lining a bottom surface of an inner sidewall of the spacer, and a filling metal partially wrapped by the first work function metal layer. The filling metal includes a first portion and a second portion, wherein the first portion is between the second portion and the semiconductor substrate, and the second portion is wider than the first portion.Type: ApplicationFiled: June 3, 2019Publication date: September 19, 2019Inventors: Bo-Wen HSIEH, Yi-Chun LO, Wen-Jia HSIEH
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Patent number: 10312338Abstract: A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over the semiconductor substrate, a first work function metal layer disposed over the gate dielectric layer and lining a bottom surface of an inner sidewall of the spacer, and a filling metal partially wrapped by the first work function metal layer. The filling metal includes a first portion and a second portion, wherein the first portion is between the second portion and the semiconductor substrate, and the second portion is wider than the first portion.Type: GrantFiled: June 22, 2018Date of Patent: June 4, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Bo-Wen Hsieh, Yi-Chun Lo, Wen-Jia Hsieh
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Patent number: 10262894Abstract: Provided is a FinFET device including a substrate having at least one fin of the FinFET device, a gate stack, a spacer, a strained layer, a composite etching stop layer, a dielectric layer and a connector. The gate stack is across the at least one fin of the FinFET device. The spacer is on a sidewall of the gate stack. The strained layer is in the substrate aside the gate stack. The composite etching stop layer is on the spacer and on the strained layer. Besides, the composite etching stop layer is thicker on the spacer but thinner on the strained layer. The dielectric layer is on the composite etching stop layer. The connector is over and electrically connected to the strained layer. A first upper portion of a first sidewall of the connector is in contact with the composite etching stop layer, and a second upper portion of a second sidewall of the connector is separate from the composite etching stop layer by the dielectric layer therebetween.Type: GrantFiled: February 5, 2018Date of Patent: April 16, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Jia Hsieh, Yi-Chun Lo
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Publication number: 20190109198Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate. The gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below the gate electrode structure. In addition, the first portion of the gate electrode structure is located over the second portion of the gate electrode structure, and a width of a top surface of the first portion of the gate electrode structure is greater than a width of a bottom surface of the second portion of the gate electrode structure.Type: ApplicationFiled: November 20, 2018Publication date: April 11, 2019Inventors: Bo-Wen HSIEH, Wen-Jia HSIEH, Yi-Chun LO, Mi-Hua LIN
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Patent number: 10170554Abstract: A semiconductor device includes: a gate structure on a substrate; a raised source/drain region adjacent to the gate structure; a channel region under the gate structure; and a protection layer between the substrate and the raised source/drain region. The protection layer is interposed between the substrate and the raised source/drain region. An atom stacking arrangement of the protection layer is different from the substrate and the raised source/drain region.Type: GrantFiled: December 26, 2014Date of Patent: January 1, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Wen-Jia Hsieh, Hsin-Hung Chen, Yi-Chun Lo, Jung-You Chen
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Patent number: 10141416Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate. The gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below the gate electrode structure. In addition, the first portion of the gate electrode structure is located over the second portion of the gate electrode structure, and a width of a top surface of the first portion of the gate electrode structure is greater than a width of a bottom surface of the second portion of the gate electrode structure.Type: GrantFiled: August 25, 2017Date of Patent: November 27, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Bo-Wen Hsieh, Wen-Jia Hsieh, Yi-Chun Lo, Mi-Hua Lin
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Patent number: 10008574Abstract: A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over the semiconductor substrate, a first work function metal layer disposed over the gate dielectric layer and lining a bottom surface of an inner sidewall of the spacer, and a filling metal partially wrapped by the first work function metal layer. The filling metal includes a first portion and a second portion, wherein the first portion is between the second portion and the semiconductor substrate, and the second portion is wider than the first portion.Type: GrantFiled: October 13, 2016Date of Patent: June 26, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Bo-Wen Hsieh, Wen-Jia Hsieh, Yi-Chun Lo
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Publication number: 20180158727Abstract: The semiconductor device includes a substrate, an epi-layer, a first etch stop layer, an interlayer dielectric (ILD) layer, a second etch stop layer, a protective layer, a liner, a silicide cap and a contact plug. The substrate has a first portion and a second portion. The epi-layer is disposed in the first portion. The first etch stop layer is disposed on the second portion. The ILD layer is disposed on the first etch stop layer. The second etch stop layer is disposed on the ILD layer, in which the first etch stop layer, the ILD layer and the second etch stop layer form a sidewall surrounding the first portion. The protective layer is disposed on the sidewall. The liner is disposed on the protective layer. The silicide cap is disposed on the epi-layer. The contact plug is disposed on the silicide cap and surrounded by the liner.Type: ApplicationFiled: February 5, 2018Publication date: June 7, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Jia HSIEH, Long-Jie HONG, Chih-Lin WANG, Kang-Min KUO
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Publication number: 20180158729Abstract: Provided is a FinFET device including a substrate having at least one fin of the FinFET device, a gate stack, a spacer, a strained layer, a composite etching stop layer, a dielectric layer and a connector. The gate stack is across the at least one fin of the FinFET device. The spacer is on a sidewall of the gate stack. The strained layer is in the substrate aside the gate stack. The composite etching stop layer is on the spacer and on the strained layer. Besides, the composite etching stop layer is thicker on the spacer but thinner on the strained layer. The dielectric layer is on the composite etching stop layer. The connector is over and electrically connected to the strained layer. A first upper portion of a first sidewall of the connector is in contact with the composite etching stop layer, and a second upper portion of a second sidewall of the connector is separate from the composite etching stop layer by the dielectric layer therebetween.Type: ApplicationFiled: February 5, 2018Publication date: June 7, 2018Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Jia Hsieh, Yi-Chun Lo