Patents by Inventor Wen-Jia Huang

Wen-Jia Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240161343
    Abstract: An image processing method includes following operations: receiving, by a processor, an input image from a camera; performing, by the processor, a top-view calibration process to generate a top-view calibrated image according to the input image; performing, by the processor, an object extraction process on the top-view calibrated image to generate at least one target object frame; performing, by the processer, a centering process on the at least one target object frame to generate a centered image; and outputting, by the processor, the centered image for a display panel to display.
    Type: Application
    Filed: June 7, 2023
    Publication date: May 16, 2024
    Inventors: Yi-Hsuan HUANG, Yao-Jia KUO, Yu-Chi TSAI, Wen-Tsung HUANG
  • Patent number: 8304787
    Abstract: A light-emitting device having a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts, while the light-emitting epitaxy structure is reverse-biased at a current density of ?10 ?A/mm2, and has a luminous efficiency not less than 50 lumen/Watt, while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm2.
    Type: Grant
    Filed: June 7, 2010
    Date of Patent: November 6, 2012
    Assignee: Epistar Corporation
    Inventors: Chung-Ying Chang, Wen-Jia Huang, Chao-Hsu Lai, Tien Kun Lin
  • Publication number: 20100308348
    Abstract: The disclosure provides a light-emitting device comprising a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts while the light-emitting epitaxy structure is reverse-biased at a current density of ?10 ?A/mm2, and has a luminous efficiency not less than 50 lumen/Watt while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm2. Another aspect of the present disclosure provides a manufacturing method for a light-emitting device.
    Type: Application
    Filed: June 7, 2010
    Publication date: December 9, 2010
    Inventors: Chung-Ying Chang, Wen-Jia Huang, Chao-Hsu Lai, Tien Kun Lin