Abstract: An LED light source comprises a lower substrate having an upper surface which is formed with a groove and covered with an insulating layer in an area outside the groove, wherein the insulating layer is partially covered with a metal layer; an upper substrate disposed on a top of the insulating layer and formed with an opening in an area corresponding to the groove; a plurality of sub-substrates disposed on an inner bottom portion of the groove, wherein each said sub-substrate has a surface covered with a circuit layer, adjacent said sub-substrates are electrically connected to each other at respective adjacent ends thereof by a first metal lead, and each said sub-substrate is provided thereon with a plurality of LED chips, in which each said LED chip is connected by a second metal lead to a corresponding electrical connection point; and a light-transmitting colloid filled in the groove and the opening.

Abstract: A light-emitting diode packaging structure includes a thermally conductive substrate; a circuit layer provided on one surface of the substrate and having an electric connection element; at least one chip mounted on the circuit layer to electrically connect to the electric connection element; alight-reflective case enclosing at least part of the substrate and being formed of a window, via which light emitted by the chip is projected outward; and a light-pervious colloidal seal fitted in the window of the case to form a protection around the chip. With the above structure, heat produced by the chip during operation thereof may be effectively radiated and dissipated via the thermally conductive substrate.

Abstract: An LED includes a substrate, a first type doping semiconductor layer, a first electrode, a light emitting layer, a second type doping semiconductor layer, a second electrode, a first dielectric layer and a first conductive plug. The first type doping semiconductor layer is formed on the substrate, and the light emitting layer, the second type doping semiconductor layer and the second electrode are formed on a portion of the first type doping semiconductor layer in sequence. The first dielectric layer is formed on another portion of the first type doping semiconductor layer where is not covered by the light emitting layer. The first electrode formed on the first dielectric layer is electrically connected with the first type doping semiconductor layer through the first conductive plug formed in the first dielectric layer. Furthermore, the second electrode is electrically connected with the second type doping semiconductor layer.

Abstract: The present invention related to a method of manufacturing an LED, including the steps of: first, forming a tape coppery metal strip; then, continuously pressing circuits on the tape coppery metal strip so as to form a carrier having circuit patterns of electric contacts on which the diode dies can be placed; next, electroplating a plurality of metal layers on the surface of the carrier; then, performing continuous injection molding on the carrier so as to form a protector having a designated shape; and curing and fixing the diode die on the carrier to connect to the terminal contact of the carrier via metal wire. A conductive or non-conductive adhesive is dropped onto the bonding position between the metal wire and the terminal of the carrier, and a soft paste is Anther applied to cover the diode die, the metal wire and the terminal.