Abstract: A semiconductor package includes a first substrate, a first layer structure, a second layer structure, a first antenna layer and an electronic component. The first antenna layer is formed on at least one of the first layer structure and the second layer structure, wherein the first antenna layer has an upper surface flush with a layer upper surface of the first layer structure or the second layer structure. The electronic component is disposed on a substrate lower surface of the first substrate and exposed from the first substrate. The first layer structure is formed between the first substrate and the second layer structure.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: Provided is an optical cable module, comprising an optical fiber cable, and an optical transceiver module. The optical transceiver module comprises a substrate; at least one optical transmitting device connected to the substrate; a plurality of optical receiving devices connected to the substrate, wherein the optical receiving devices are cylindrical optical receiving devices, and an air tightness of each of the cylindrical optical receiving devices is in a range of 1×10-12 atm*cc/sec to 5*10-7 atm*cc/sec; at least one optical receiving holder configured to assemble the optical receiving devices, wherein the optical receiving devices are secured in the optical receiving holder.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: A method of manufacturing a semiconductor device includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, and forming a sacrificial film over the first semiconductor layer and the second semiconductor layer. The sacrificial film fills an area between the first semiconductor layer and the second semiconductor layer. The method further includes forming a space in the sacrificial film between the first semiconductor layer and the second semiconductor layer and removing the sacrificial film.

Abstract: A method of manufacturing a semiconductor device includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, and forming a sacrificial film over the first semiconductor layer and the second semiconductor layer. The sacrificial film fills an area between the first semiconductor layer and the second semiconductor layer. The method further includes forming a space in the sacrificial film between the first semiconductor layer and the second semiconductor layer and removing the sacrificial film.

Abstract: A driving method suitable for a head mounted device (HMD) is provided. The driving method includes the following operations: moving a first image capture unit and a second image capture unit of the HMD to respectively capture two left-eye images and two right-eye images; calculating a first eye relief according to at least one left-eye feature in the two left-eye images; calculating a second eye relief according to at least one right-eye feature in the two right-eye images; calculating an interpupillary distance (IPD) according to the first eye relief and the second eye relief; and adjusting, according to the IPD, a distance between a first lens and a second lens of the HMD.

Abstract: A driving method suitable for a head mounted device (HMD) is provided. The driving method includes the following operations: moving a first image capture unit and a second image capture unit of the HMD to respectively capture two left-eye images and two right-eye images; calculating a first eye relief according to at least one left-eye feature in the two left-eye images; calculating a second eye relief according to at least one right-eye feature in the two right-eye images; calculating an interpupillary distance (IPD) according to the first eye relief and the second eye relief; and adjusting, according to the IPD, a distance between a first lens and a second lens of the HMD.

Abstract: An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, and a plurality of pixel units, each of the pixel units formed between every neighboring two of the scan lines and data lines is provided. Each of the pixel units includes a first active device, a first pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device, a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device and a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the second active device. The first pixel electrode has a surface area different from that of the second pixel electrode.

Abstract: An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, and a plurality of pixel units, each of the pixel units formed between every neighboring two of the scan lines and data lines is provided. Each of the pixel units includes a first active device, a first pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device, a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device and a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the second active device. The first pixel electrode has a surface area different from that of the second pixel electrode.

Abstract: An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, and a plurality of pixel units, each of the pixel units formed between every neighboring two of the scan lines and data lines is provided. Each of the pixel units includes a first active device, a first pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device, a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device and a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the second active device. The first pixel electrode has a surface area different from that of the second pixel electrode.

Abstract: An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, and a plurality of pixel units, each of the pixel units formed between every neighboring two of the scan lines and data lines is provided. Each of the pixel units includes a first active device, a first pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device, a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device and a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the second active device. The first pixel electrode has a surface area different from that of the second pixel electrode.

Abstract: An active device array substrate, including a substrate, a plurality of scan lines, a plurality of data lines and a plurality of pixel units is provided. The scan lines, data lines and pixel units are disposed on the substrate. Each of the pixel units includes a first active device, a first pixel electrode, a first resistive device, a second active device, and a second pixel electrode. The first pixel electrode is electrically connected to a corresponding scan line and a corresponding data line through the first active device. The first resistive device is electrically connected between the first active device and the first pixel electrode. Additionally, the second pixel electrode is electrically connected to a corresponding scan line and a corresponding data line through the second active device.

Abstract: An active device array substrate, including a substrate, a plurality of scan lines, a plurality of data lines and a plurality of pixel units is provided. The scan lines, data lines and pixel units are disposed on the substrate. Each of the pixel units includes a first active device, a first pixel electrode, a first resistant device, a second active device, and a second pixel electrode. The first pixel electrode is electrically connected to a corresponding scan line and a corresponding data line through the first active device. The first resistant device is electrically connected between the first active device and the first pixel electrode. Additionally, the second pixel electrode is electrically connected to a corresponding scan line and a corresponding data line through the second active device.