Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: A method for forming a semiconductor structure is provided.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming first and second fin structures, wherein each of the first and the second fin structurez include first semiconductor layers and second semiconductor layers alternatingly stacked, and forming a first mask structure to cover the second fin structure. The first mask structure includes a first dielectric layer and a second dielectric layer over the first mask structure, and the first dielectric layer and the second dielectric layer are made of different materials. The method also includes forming a first source/drain feature in the first fin structure, removing the first mask structure, forming a second source/drain feature in the second fin structure, removing the first semiconductor layers of the first fin structure and the second fin structure, thereby forming first nanostructures and second nanostructures, and forming a gate stack around the first and second nanostructures.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: A method includes forming a first gate stack over a first semiconductor region, depositing a spacer layer on the first gate stack, and depositing a dummy spacer layer on the spacer layer. The dummy spacer layer includes a metal-containing material. An anisotropic etching process is performed on the dummy spacer layer and the spacer layer to form a gate spacer and a dummy sidewall spacer, respectively. The first semiconductor region is etched to form a recess extending into the first semiconductor region. The first semiconductor region is etched using the first gate stack, the gate spacer, and the dummy sidewall spacer as an etching mask. The method further includes epitaxially growing a source/drain region in the recess, and removing the dummy sidewall spacer after the source/drain region is grown.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming first and second fin structures, wherein each of the first and the second fin structurez include first semiconductor layers and second semiconductor layers alternatingly stacked, and forming a first mask structure to cover the second fin structure. The first mask structure includes a first dielectric layer and a second dielectric layer over the first mask structure, and the first dielectric layer and the second dielectric layer are made of different materials. The method also includes forming a first source/drain feature in the first fin structure, removing the first mask structure, forming a second source/drain feature in the second fin structure, removing the first semiconductor layers of the first fin structure and the second fin structure, thereby forming first nanostructures and second nanostructures, and forming a gate stack around the first and second nanostructures.

Abstract: A parallel optical scanning inspection device, comprising a light source unit, an interference unit, a beam splitting unit, an optical path adjustment unit, a plurality of scanning units and a receiving unit. The light source unit provides initial light to an interference unit. The interference unit divides the initial light into reference light and sampling light. The beam splitting unit splits the sampling light into a plurality of sampling light beams. The optical path adjustment unit adjusts the plurality of sampling light beams into scanning light beams with different optical paths. Each of the scanning units receives one of the scanning light beams. A sample is scanned by the scanning light beams such that each of the scanning units receives detection light reflected or scattered from different positions of the sample. The receiving unit receives and coheres the reference light and the detection light, respectively, to generate optical information.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: A method of manufacturing a semiconductor device includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, and forming a sacrificial film over the first semiconductor layer and the second semiconductor layer. The sacrificial film fills an area between the first semiconductor layer and the second semiconductor layer. The method further includes forming a space in the sacrificial film between the first semiconductor layer and the second semiconductor layer and removing the sacrificial film.

Abstract: A method of manufacturing a semiconductor device includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, and forming a sacrificial film over the first semiconductor layer and the second semiconductor layer. The sacrificial film fills an area between the first semiconductor layer and the second semiconductor layer. The method further includes forming a space in the sacrificial film between the first semiconductor layer and the second semiconductor layer and removing the sacrificial film.

Abstract: A driving method suitable for a head mounted device (HMD) is provided. The driving method includes the following operations: moving a first image capture unit and a second image capture unit of the HMD to respectively capture two left-eye images and two right-eye images; calculating a first eye relief according to at least one left-eye feature in the two left-eye images; calculating a second eye relief according to at least one right-eye feature in the two right-eye images; calculating an interpupillary distance (IPD) according to the first eye relief and the second eye relief; and adjusting, according to the IPD, a distance between a first lens and a second lens of the HMD.

Abstract: A driving method suitable for a head mounted device (HMD) is provided. The driving method includes the following operations: moving a first image capture unit and a second image capture unit of the HMD to respectively capture two left-eye images and two right-eye images; calculating a first eye relief according to at least one left-eye feature in the two left-eye images; calculating a second eye relief according to at least one right-eye feature in the two right-eye images; calculating an interpupillary distance (IPD) according to the first eye relief and the second eye relief; and adjusting, according to the IPD, a distance between a first lens and a second lens of the HMD.

Abstract: An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, and a plurality of pixel units, each of the pixel units formed between every neighboring two of the scan lines and data lines is provided. Each of the pixel units includes a first active device, a first pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device, a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device and a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the second active device. The first pixel electrode has a surface area different from that of the second pixel electrode.

Abstract: An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, and a plurality of pixel units, each of the pixel units formed between every neighboring two of the scan lines and data lines is provided. Each of the pixel units includes a first active device, a first pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device, a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device and a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the second active device. The first pixel electrode has a surface area different from that of the second pixel electrode.