Abstract: An electronic package is provided, in which electronic elements and at least one packaging module including a semiconductor chip and a shielding structure covering the semiconductor chip are disposed on a carrier structure, an encapsulation layer encapsulates the electronic elements and the packaging module, and a shielding layer is formed on the encapsulation layer and in contact with the shielding structure. Therefore, the packaging module includes the semiconductor chip and the shielding structure and has a chip function and a shielding wall function simultaneously.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: A method of forming a semiconductor device includes providing a substrate including a circuit region and a well strap region, forming a mandrel extending from the circuit region to the well strap region, depositing mandrel spacers on sidewalls of the mandrel, removing the mandrel in the circuit region, while the mandrel in the well strap region remains intact, patterning the substrate with the mandrel spacers in the circuit region and the mandrel in the well strap region as an etch mask, thereby forming at least a first fin in the circuit region and a second fin in the well strap region, and epitaxially growing a first epitaxial feature over the first fin in the circuit region and a second epitaxial feature over the second fin in the well strap region. A width of the second fin is larger than a width of the first fin.

Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode layer on the p-type semiconductor layer, and patterning the gate electrode layer to form a gate electrode. Preferably, the gate electrode includes an inclined sidewall.

Abstract: A nonlinear optical crystal has a chemical formula Li2X4TiOSi4O12, wherein X=K or Rb. The nonlinear optical crystal belongs to tetragonal system With space group P4nc and Z=2. The unit cell parameters of Li2K4TiOSi4O12 are a=b=11.3336(5) ?, c=5.0017(2) ?; and the unit cell parameters of Li2Rb4TiOSi4O12 are a=b=11.5038(6) ?. The two crystals are thermally stable and show strong second harmonic generation with high laser damage threshold.

Abstract: A nonlinear optical crystal has a chemical formula Li2X4TiOSi4O12, wherein X=K or Rb. The nonlinear optical crystal belongs to tetragonal system with space group P4nc and Z=2. The unit cell parameters of Li2K4TiOSi4O12 are a=b=11.3336(5) ?, c=5.0017(2) ?; and the unit cell parameters of Li2Rb4TiOSi4O12 are a=b=11.5038(6) ?, c=5.1435(3) ?. The two crystals are thermally stable and show strong second harmonic generation with high laser damage threshold.

Abstract: An enclosure includes a cover body for covering a housing, and a switch device that includes a lock plate connected pivotally to the cover body and connected to an operating plate mounted movably on the cover body via a connecting bolt extending through the operating plate, the cover body and an inclined guide slot in the lockplate. To switch the enclosure from a locked state, where the lock plate engages a retaining recess in the housing, to an unlocked state, where the lock plate extends into a notch in the housing, the operating plate is moved in a direction so that the lock plate is rotated to disengage the retaining recess, and the cover body is then moved in the direction until the lock plate extends into the notch. When the lock plate extends into the notch, removal of the cover body is allowed.

Abstract: A wireless remote-control cooler assembly adapted to be used with a motherboard include a fan, and a circuit unit electrically connected with the fan and adapted to be electrically connected with the motherboard for obtaining power supply from the motherboard. A first signal transceiver module is electrically connected to the circuit unit and provided with a first transmitter for transmitting a feedback signal indicating the operation status of the fan, and a first receiver. A second signal transceiver module is adapted to be electrically connected to the motherboard and provided with a second receiver for receiving the feedback signal, and a second transmitter for transmitting a control signal to the first receiver to regulate the operation status of the fan via the circuit unit.

Abstract: A wire connecting device is adapted for connecting a plurality of wires, and includes a base seat having at least one mounting portion, a cover body coupled to the base seat and covering the mounting portion, a conducting unit, and a resilient pusher unit. The conducting unit is disposed between the base seat and the cover body, and includes at least one conductive plate that is mounted on the at least one mounting portion and that has a first through hole and at least one second through hole. Each of the first and second through holes is adapted for extension of an exposed conductor of a respective one of the wires into the corresponding first or second recess in the base seat. The resilient pusher unit is provided between the cover body and the conducting unit, and cooperates with the conducting unit to clamp the wires therebetween.