Abstract: An electronic package is provided, in which electronic elements and at least one packaging module including a semiconductor chip and a shielding structure covering the semiconductor chip are disposed on a carrier structure, an encapsulation layer encapsulates the electronic elements and the packaging module, and a shielding layer is formed on the encapsulation layer and in contact with the shielding structure. Therefore, the packaging module includes the semiconductor chip and the shielding structure and has a chip function and a shielding wall function simultaneously.

Abstract: A temperature-sensing and humidity-controlling fiber includes a hydrophilic material and a temperature-sensing material. The temperature-sensing material has a lower critical solution temperature (LCST) between 31.2° C. and 32.5° C. when a light transmittance thereof is in a range from 3% to 80%, in which a wavelength of the light is between 450 nm and 550 nm.

Abstract: Disclosed is a method for forming a crystalline protective polysilicon layer which does not create defective voids during subsequent processes so as to provide effective protection to devices underneath. In one embodiment, a method for forming a semiconductor device, includes: depositing a protective coating on a first polysilicon layer; forming an epitaxial layer on the protective coating; and depositing a second polysilicon layer over the epitaxial layer, wherein the protective coating comprises a third polysilicon layer, wherein the third polysilicon layer is deposited at a first temperature in a range of 600-700 degree Celsius, and wherein the third polysilicon layer in the protect coating is configured to protect the first polysilicon layer when the second polysilicon layer is etched.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode layer on the p-type semiconductor layer, and patterning the gate electrode layer to form a gate electrode. Preferably, the gate electrode includes an inclined sidewall.

Abstract: A temperature-sensing and humidity-controlling fiber includes a hydrophilic material and a temperature-sensing material. The temperature-sensing material has a lower critical solution temperature (LCST) between 31.2° C. and 32.5° C. when a light transmittance thereof is in a range from 3% to 80%, in which a wavelength of the light is between 450 nm and 550 nm.

Abstract: A temperature-sensing and humidity-controlling fiber includes a hydrophilic material and a temperature-sensing material. The temperature-sensing material has a lower critical solution temperature (LCST) between 31.2° C. and 32.5° C. when a light transmittance thereof is in a range from 3% to 80%, in which a wavelength of the light is between 450 nm and 550 nm.

Abstract: A mixing light module includes a matrix, a fluorescent film, and a plurality of micro-structures. The matrix includes an incidence surface, an emission surface and a reflective surface. The fluorescent film disposed on or above the emission surface has an upper surface and a lower surface and includes a plurality of fluorescent particles. The matrix receives a first light having a first wavelength, and the reflective surface reflects the first light to make the first light to be emitted from the emission surface. Since the plurality of fluorescent particles receives a part of the first light from the emission surface, the plurality of fluorescent particles is excited to emit a second light having a second wavelength. The second light and the first light are mixed into a predetermined light. The plurality of micro-structures is used to make the first light or the second light uniform.

Abstract: A mixing light module includes a matrix, a fluorescent film, and a plurality of micro-structures. The matrix includes an incidence surface, an emission surface and a reflective surface. The fluorescent film disposed on or above the emission surface has an upper surface and a lower surface and includes a plurality of fluorescent particles. The matrix receives a first light having a first wavelength, and the reflective surface reflects the first light to make the first light to be emitted from the emission surface. Since the plurality of fluorescent particles receives a part of the first light from the emission surface, the plurality of fluorescent particles is excited to emit a second light having a second wavelength. The second light and the first light are mixed into a predetermined light. The plurality of micro-structures is used to make the first light or the second light uniform.

Abstract: An abrasion-resistant transfer printing structure to transfer patterns and texts to a targeted object surface by press printing includes a hardened protecting layer and a release base layer. The hardened protection layer includes a first surface and a second surface. The first surface allows a transfer printing glue to be bonded to the targeted object to cover at least an area corresponding to the patterns and texts. The release base layer is located on the second surface of the hardened protection layer by a releasable manner and can be separated from the hardened protection layer by applying a release force after the press printing process is finished. Thus the hardened protection layer is exposed to isolate the patterns and texts from in contact with the exterior. The surface of the targeted object also is abrasion resistant.

Abstract: A virtual channel platform is disclosed. Said virtual channel platform comprises two spaced electrode plates, which can provide an electric field, and a voltage source electrically connected to the two electrode plates. Said plates define a virtual reservoir and a virtual channel. When the voltage source provides a voltage between the electrode plates, the electric field generates a force to drive a driven fluid streaming from the virtual reservoir to the virtual channel, allowing the virtual channel to be filled with the driven fluid fully.

Abstract: A virtual channel platform is disclosed. Said virtual channel platform comprises two electrode plates, which can provide an electric field, and two spacers set between said plates. Said plates are separated by said spacers for forming a passageway. A driven fluid is injected into said passageway. When applying electric signals of different frequencies in said plates, said plates form said electric field to drive said working fluid in a virtual channel.

Abstract: An abrasion-resistant transfer printing structure to transfer patterns and texts to a targeted object surface by press printing includes a hardened protecting layer and a release base layer. The hardened protection layer includes a first surface and a second surface. The first surface allows a transfer printing glue to be bonded to the targeted object to cover at least an area corresponding to the patterns and texts. The release base layer is located on the second surface of the hardened protection layer by a releasable manner and can be separated from the hardened protection layer by applying a release force after the press printing process is finished. Thus the hardened protection layer is exposed to isolate the patterns and texts from in contact with the exterior. The surface of the targeted object also is abrasion resistant.

Abstract: The present invention relates to a synthesis method of thionate diamine by the reaction of alkali metal isethionate with diols to form alkali metal isethionate ethoxylate having the following structural formula:HO(CH.sub.2 CH.sub.2 O).sub.n CH.sub.2 CH.sub.2 SO.sub.3 AThe above isethionate ethoxylate is then reacted with aliphatic diamine having a Carbon number of 2 to 6 to form a series of N-(2-aminoalkyl)-2-aminoethyoxylate ethane sulfonate having the following structure formula:H.sub.2 N--(CH.sub.2).sub.m --NH--(CH.sub.2 CH.sub.2 O).sub.n CH.sub.2 CH.sub.2 SO.sub.