Abstract: A method of forming a semiconductor device includes providing a substrate including a circuit region and a well strap region, forming a mandrel extending from the circuit region to the well strap region, depositing mandrel spacers on sidewalls of the mandrel, removing the mandrel in the circuit region, while the mandrel in the well strap region remains intact, patterning the substrate with the mandrel spacers in the circuit region and the mandrel in the well strap region as an etch mask, thereby forming at least a first fin in the circuit region and a second fin in the well strap region, and epitaxially growing a first epitaxial feature over the first fin in the circuit region and a second epitaxial feature over the second fin in the well strap region. A width of the second fin is larger than a width of the first fin.

Abstract: A remote control for controlling an electronic device includes a housing, a remote control module installed inside the housing for controlling the electronic device according to an input signal, and a body temperature measuring module installed inside the housing, for sensing body temperature by infrared rays.

Abstract: The present disclosure provides a system and method for providing improved film uniformity from an ion metal plasma source. The system includes a deposition chamber and a coil. The coil is comprised of a first metal and includes opposite terminal ends disposed within the deposition chamber. At least one of the opposite terminal ends of the coil is angled less than ninety degrees.