Abstract: A method of maintaining a strong endpoint detection signal, for RIE processes, has bean developed. After numerous RIE procedures have been performed, in a specific RIE chamber, an insitu dry cleaning procedure is implemented to remove polymer from a window in the RIE tool, a window that is used for monitoring endpoint. The insitu dry cleaning procedure is performed using oxygen or chlorine, in the etching chamber of a single wafer RIE tool, while wafers, waiting to be etched, reside in a different chamber of the single wafer RIE tool. The ability to insitu dry clean, results in little interruption in the utilization of the etching function of this tool.

Abstract: A method for substantially improving the electrical characteristics of contact surfaces in contact holes and via holes that are formed in semiconductor substrates is disclosed. The method involves, in particular, the introduction of an "after-etch" process, subsequent to the application of prior art methods of "main-etch," "over-etch," and "soft-etch" that are employed in opening holes in semiconductors, in general. The said process uses an isotropic dry etch assisted by argon gas ions in such a way that the area of the contact surfaces are increased manyfold through the formation of three-dimensional structures. It is shown that the resulting electrical contact resistance of the surfaces is reduced, and therefore, improved substantially.

Abstract: A method for sterilizing solid hyaluronic acid includes autoclaving solid hyaluronic acid, whereby the solid hyaluronic acid is exposed to saturated steam at positive gauge pressure for a period of time that is sufficient to sterilize the solid hyaluronic acid. In one embodiment, autoclaving includes exposing the solid hyaluronic acid to saturated steam at a gauge pressure of about one atmosphere for a period of time between about fifteen and thirty minutes.

Abstract: A method of forming buried contact holes is described. A layer of silicon oxide is provided overlying a semiconductor substrate. A layer of polysilicon is deposited overlying the silicon oxide layer. The polysilicon layer is covered with a layer of photoresist which is exposed and developed to provide a photoresist mask. The polysilicon layer is etched away where it is not covered by the photoresist mask wherein a polymer buildup is formed on the sidewalls of the polysilicon layer. Ions are implanted into the silicon oxide layer not covered by the photoresist mask. The photoresist mask is removed whereby the polymer buildup is also removed. Thereafter, the silicon oxide layer not covered by the polysilicon layer is etched away to complete the formation of the buried contact hole with reduced polymer buildup in the fabrication of an integrated circuit.

Abstract: This invention describes a method for preparing water-insoluble biocompatible gels, films and sponges by reacting hyaluronic acid, or a salt thereof, with a carbodiimide in the absence of a nucleophile or a polyanionic polysaccharide. The water-insoluble gels, films and sponges of this invention may be used as surgical aids to prevent adhesions of body tissues and as drug delivery vehicles.

Abstract: This invention describes a method for preparing water-insoluble biocompatible gels, films and sponges by reacting hyaluronic acid, or a salt thereof, with a carbodiimide in the absence of a nucleophile or a polyanionic polysaccharide. The water-insoluble gels, films and sponges of this invention may be used as surgical aids to prevent adhesions of body tissues and as drug delivery vehicles.

Abstract: A method of treating a wound site wherein a porous, adhesive backed dressing is utilized. A vacuum and/or heat is applied to the wound site through the dressing so as to draw the tissue adjacent the wound site to the dressing so as to minimize trauma to the wound and increase the adherence of the adhesive.