Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; depositing a mask layer over the substrate; forming a mandrel pattern over the mask layer; forming a spacer pattern around the mandrel pattern; removing the mandrel pattern; and applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a semiconductor fin structure including first semiconductor layers and second semiconductor layers alternatingly stacked, laterally recessing the first semiconductor layers of the semiconductor fin structure to form first notches in the first semiconductor layers, forming first passivation layers on first sidewalls of the first semiconductor layers exposed from the first notches, and forming first inner spacer layers in the first notches.

Abstract: A semiconductor device includes a first type of light sensing units, where each instance of the first type of light sensing units is operable to receive a first amount of radiation; and a second type of light sensing units, where each instance of the second type of light sensing units is operable to receive a second amount of radiation, and the second type of light sensing units is arranged in an array with the first type of light sensing units to form a pixel sensor. The first amount of radiation is smaller than the second amount of radiation, and at least a first instance of the first type of light sensing units is adjacent to a second instance first type of light sensing unit.

Abstract: A method of forming a semiconductor device includes: forming a via in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; forming an opening in the second dielectric layer, where the opening exposes an upper surface of the via; selectively forming a capping layer over the upper surface of the via, where the capping layer has a curved upper surface that extends above a first upper surface of the first dielectric layer distal from the substrate; after forming the capping layer, forming a barrier layer in the opening over the capping layer and along sidewalls of the second dielectric layer exposed by the opening; and filling the opening by forming an electrically conductive material over the barrier layer.

Abstract: Disclosed is an electronic device including a display module, a touch light-emitting module, and a processing unit. The touch light-emitting module includes a light-transmitting unit, a touch unit, and a light-emitting unit. The touch unit is disposed under the light-transmitting unit and is adapted to generate a touch signal based on touch of the user on the light-transmitting unit. The light-emitting unit is disposed on the touch unit. The light-emitting unit is adapted to provide an illumination beam to the light-transmitting unit according to an illumination signal. The processing unit is electrically connected to the display module and the touch light-emitting module. When the electronic device is switched to a touch mode, the processing unit disables the light-10 emitting unit. When the electronic device is switched to a content input mode, the processing unit enables the light-emitting unit to provide the illumination beam to the light-transmitting unit.

Abstract: Provided is a method of accurate and sensitive characterization and prognosis of prostate cancer in a subject. The method includes obtaining a biological sample from the subject and determining the level of identified biomarkers.

Abstract: A roller module includes a scroll wheel, a magnetization member, a swinging element and a pole-reversible magnetic element. The magnetization member is synchronously rotated with the scroll wheel. The swinging element includes a pivotal part, a first magnetic element and a second magnetic element. The first magnetic element and the second magnetic element are movable by using the pivotal part as a rotation center. The pole-reversible magnetic element and the first magnetic element interact with each other. Consequently, the second magnetic element is close to or away from the magnetization member.

Abstract: A semiconductor device includes a channel structure, extending along a first lateral direction, that is disposed over a substrate. The semiconductor device includes a gate structure, extending along a second lateral direction perpendicular to the first lateral direction, that straddles the channel structure. The semiconductor device includes an epitaxial structure, coupled to the channel structure, that is disposed next to the gate structure. The semiconductor device includes a first gate spacer and a second gate spacer each comprising a first portion disposed between the gate structure and the epitaxial structure along the first lateral direction. The semiconductor device includes an air gap interposed between the first portion of the first gate spacer and the first portion of the second gate spacer. The air gap exposes a second portion of the first gate spacer that extends in the first lateral direction.

Abstract: A non-coherent noise reduction method, comprising: (a) receiving a plurality of input audio sensing signals by a processor, wherein the input audio sensing signals correspond to a plurality of channels responsive to sensing by a plurality of audio sensors; (b) detecting whether non-coherent noise exists in at least one of the channels by a non-coherent noise detector; (c) estimating at least one noise power of the non-coherent noise by a noise power estimator, if the non-coherent noise exists in at least one of the channels; (d) deriving at least one noise contour of the non-coherent noise by a noise contour estimator, if the non-coherent noise exists in at least one of the channels; and (e) enhancing the input audio sensing signals according to the noise power and the noise contour if the non-coherent noise exists in at least one of the channels.

Abstract: A collaboration system and a collaboration method are provided. The collaboration system includes a first display device and a second display device. The first display device includes a first screen. The first screen displays a first display interface. The first display interface has a first display window and a first function key. The first display window displays a first frame. The second display device includes a second display screen. The second display screen displays a second display interface. The second display interface has a second display window. The second display window displays a second frame. When the first function key is turned on, the first frame moves along with the second frame. When the first function key is turned off, the first frame does not follow the movement of the second frame.

Abstract: A semiconductor device includes an active gate structure extending along a first lateral direction. The semiconductor device includes an inactive gate structure also extending along the first lateral direction. The semiconductor device includes a first epitaxial structure disposed between the active gate structure and the inactive gate structure along a second lateral direction perpendicular to the first lateral direction. The active gate structure wraps around each of a plurality of channel layers that extend along the second direction, and the inactive gate structure straddles a semiconductor cladding layer that continuously extends along a first sidewall of the first epitaxial structure and across the plurality of channel layers.

Abstract: A semiconductor die and the method of forming the same are provided. The semiconductor die includes a first interconnect structure, a second interconnect structure including a conductive feature, and a device layer between the first interconnect structure and the second interconnect structure. The device layer includes a semiconductor fin, a first gate structure on the semiconductor fin, a source/drain region adjacent the first gate structure, and a shared contact extending through the semiconductor fin to be electrically connected to the source/drain region and the first gate structure. The conductive feature contacts the shared contact.

Abstract: An OTP memory capacitor structure includes a semiconductor substrate, a bottom electrode, a capacitor insulating layer and a metal electrode stack structure. The bottom electrode is provided on the semiconductor substrate. The capacitor insulating layer is provided on the bottom electrode. The metal electrode stack structure includes a metal layer, an insulating sacrificial layer and a capping layer stacked in sequence. The metal layer is provided on the capacitor insulating layer and is used as a top electrode. The insulating sacrificial layer is provided between the metal layer and the capping layer. A manufacturing method of the OTP memory capacitor structure is also provided. By the provision of the insulating sacrificial layer, the bottom electrode formed first can be prevented from being damaged by subsequent etching and other processes, so that the OTP memory capacitor structure has better electrical characteristics.

Abstract: In one embodiment, a method of forming metal interconnects uses a direct metal etch approach to form and fill the metal gap. The method may include directly etching a metal layer to form metal patterns. The metal patterns may be spaced apart from one another by recesses. A dielectric spacer may be formed extending along the sidewalls of each of the recesses. The recesses may be filled with a conductive material to form a second set of metal patterns. By directly etching the metal film, the technique allows for reduced line width roughness. The disclosed structure may have the advantages of increased reliability, better RC performance and reduced parasitic capacitance.

Abstract: The present invention provides antibody drug conjugates, wherein an antibody or antibody fragment that specifically binds to human cKIT is linked to a drug moiety, optionally through a linker. The present invention further provides pharmaceutical compositions comprising the antibody drug conjugates; and methods of making and using such pharmaceutical compositions for ablating hematopoetic stem cells in a patient in need thereof.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a gate structure on a substrate, forming a first spacer on the gate structure, forming a patterned mask on the gate structure and one side of the gate structure, removing the first spacer on another side of the gate structure, and then forming a source/drain region adjacent to two sides of the gate structure.

Abstract: An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.

Abstract: A playback application is configured to dynamically generate topology for an interactive media title. The playback application obtains an initial topology and also collects various data associated with a user interacting with the feature. The playback application then modifies the initial topology, based on the collected data, to generate a dynamic topology tailored to the user. The dynamic topology describes the set of choices available to the user during playback as well as which options can be selected by the user when making a given choice. In addition, the playback application also selectively buffers different portions of the interactive media title, based on the collected data, in anticipation of the user selecting particular options for available choices.

Abstract: A system and method for cleaning ring frames is disclosed. In one embodiment, a ring frame processing system includes: a plurality of blades for mechanically removing tapes and tape residues from surfaces of a ring frame; a plurality of wheel brushes for conditioning the surfaces of the ring frame; and a transport mechanism for transporting the ring frame.