Abstract: A servo motor, comprising a stator and a rotor disposed within the stator. The rotor has a core and magnets, covering the periphery of the core, forming a plurality of axially extending rotor poles. The rotor poles comprise a plurality of the magnets arranged axially, and the centers of adjacent magnets of a rotor pole are staggered by a mechanical angle in the circumferential direction of the rotor.

Abstract: A stator for an electric motor has a laminated stator core 10 formed from a plurality of stacked laminations, and a stator winding formed from a plurality of coils 20 wound on bobbins 30. The stator core 10 has a plurality of teeth 40 which extend radially and alternately spaced between and connected to circumferentially extending yokes 50. The yokes and the teeth are separately formed with each yoke 50 being a stack of yoke laminations 12 and each tooth 40 being a stack of tooth laminations 14. The teeth 40 are inserted through the bobbins 30 and arranged in a cylindrical form with each tooth 40 extending radially. Yokes 50 are then fixed between radially outer ends 144 of adjacent teeth to complete the radially outer portion of the stator core. Each tooth 40 has a radial location surface 144b which contacts an inner surface of the adjacent yokes 50. The yokes 50 and teeth 40 are fixed together by welding the yokes 50 to the outer ends 144 of the teeth 40.

Abstract: A light-emitting device and a method for manufacturing the same are described, by forming a SiN/Al1-x-yInxGayN(0?x?1, 0?y?1, x+y?1) superlattice layer between a substrate and an undoped GaN as a buffer layer, so as to reduce dislocation density of the buffer layer. In the SiN/Al1-x-yInxGayN(0?x?1, 0?y?1, x+y?1) superlattice layer, Al1-x-yInxGayN(0?x?1, 0?y?1, x+y?1) can be n-type, p-type or undoped.

Abstract: A light emitting diode (LED) having an anti-reflection layer and a method of making the same are disclosed. The present invention is featured in forming an anti-reflection layer on a window layer of the LED, thereby reducing the chance of the photons generated by the LED to be totally reflected at the interface between the window layer and air. The process used for forming the anti-reflection layer can be such as plasma enhanced chemical vapor deposition (PECVD), sputtering, thermal evaporation or electron-beam evaporation, etc. Furthermore, the refractive index of the aforementioned anti-reflection layer is between 3 and 1.5, and the material forming the anti-reflection layer can be such as Si3N4 or ZnSe, etc.

Abstract: A light emitting diode. The light emitting diode has a substrate that has two surfaces. On one surface, a distributed Bragg reflector, an n-type confining layer, an active layer, a p-type confining layer, a current spreading layer, a meshed Ohmic contact layer, a transparent conductive oxide layer and a front side electrode are formed. The other surface has a rear side electrode formed thereon. Via the meshed structure, the absorbing area of the Ohmic contact layer is reduced to avoid the light emitting from the active layer being greatly absorbed by the Ohmic contact layer. In contrast, the light intensity of the light emitting diode is increased.

Abstract: A light emitting diode. The light emitting diode has a substrate that has two surfaces. On one surface, a distributed Bragg reflector, an n-type confining layer, an active layer, a p-type confining layer, a current spreading layer, a meshed Ohmic contact layer, a transparent conductive oxide layer and a front side electrode are formed. The other surface has a rear side electrode formed thereon. Via the meshed structure, the absorbing area of the Ohmic contact layer is reduced to avoid the light emitting from the active layer being greatly absorbed by the Ohmic contact layer. In contrast, the light intensity of the light emitting diode is increased.

Abstract: A method for forming a metal bridge in a hetero-junction bipolar transistor. The method includes etching away a portion of the semiconductor layers under a metallic layer so that a device region and a contact pad region on the semiconductor substrate are isolated from each other. The invention not only can produce small area hetero-junction bipolar transistors with ease, the invention can also fabricate large area and small area hetero-junction bipolar transistors at the same time. By clearing away contact pad capacitance, hetero-junction bipolar transistors suitable for high frequency applications can be manufactured with a few simple steps. In addition, the metal bridge of this invention can be fabricated on a semiconductor layer, which can serve as a support for increasing the strength of the metal bridge.

Abstract: This invention is a new type of GaInP/AlGaInP for a visible separate-confinement-heterostructure strained quantum well(SCH-S-QW) laser with passive wave guides in the cladding layers. By using this structure, we can significantly improve the transverse beam divergence with only a slight increase of the threshold current. With proper choice of parameters, the transverse beam divergence as narrow as 18.degree.. FWHM can be achieved while the threshold current only becomes 1.12 factor than the lasers without the passive waveguide structure. This type of structure has three advantages:(1) It increases the spectrum dissolution rate between the laser and its optic element to increase the efficiency in actual operation.(2) Smaller oval ratio makes the light beams appears circular, and avoids the problem of non-paralleled focusing in optical instruments. It also eliminates cumbersome non-paralleled focusing in traditional GaInP/AlGaInP, and is more cost efficient.