Abstract: A method for fabricating an assemble substrate is provided, including stacking a circuit portion on a plurality of circuit members. The circuit members are spaced apart from one another in a current packaging process to increase a layer area. The assemble substrate thus fabricated meets the requirements for a packaging substrate of a large size, and has a high yield and low fabrication cost.

Abstract: A method for fabricating an assemble substrate is provided, including stacking a circuit portion on a plurality of circuit members. The circuit members are spaced apart from one another in a current packaging process to increase a layer area. The assemble substrate thus fabricated meets the requirements for a packaging substrate of a large size, and has a high yield and low fabrication cost.

Abstract: A method for fabricating an assemble substrate is provided, including stacking a circuit portion on a plurality of circuit members. The circuit members are spaced apart from one another in a current packaging process to increase a layer area. The assemble substrate thus fabricated meets the requirements for a packaging substrate of a large size, and has a high yield and low fabrication cost.

Abstract: A method for avoiding resist poisoning during a damascene process is disclosed. A semiconductor substrate is provided with a low-k dielectric layer (k?2.9) thereon, a SiC layer over the low-k dielectric layer, and a blocking layer over the SiC layer. The blocking layer is used to prevent unpolymerized precursors diffused out from the low-k dielectric layer from contacting an overlying resist. A bottom anti-reflection coating (BARC) layer is formed on the blocking layer. A resist layer is formed on the BARC layer, the resist layer having an opening to expose a portion of the BARC layer. A damascene structure is formed in the low-k dielectric layer by etching the BARC layer, the blocking layer, the SiC layer, and the low-k dielectric layer through the opening.

Abstract: A method for avoiding resist poisoning during a damascene process is disclosed. A semiconductor substrate is provided with a low-k dielectric layer (k?2.9) thereon, a SiC layer over the low-k dielectric layer, and a blocking layer over the SiC layer. The blocking layer is used to prevent unpolymerized precursors diffused out from the low-k dielectric layer from contacting an overlying resist. A bottom anti-reflection coating (BARC) layer is formed on the blocking layer. A resist layer is formed on the BARC layer, the resist layer having an opening to expose a portion of the BARC layer. A damascene structure is formed in the low-k dielectric layer by etching the BARC layer, the blocking layer, the SiC layer, and the low-k dielectric layer through the opening.

Abstract: A two-step stripping method for removing via photoresist during the fabrication of trench-first partial-via dual damascene features is disclosed. In the first cleaning step, inert gas (He, Ar, N2)/fluorocarbon plasma is used to contact the remaining “Via Photo” for a short time period not exceeding 20 seconds. Thereafter, in the second cleaning step, a reducing plasma is used to completely strip the remaining “Via Photo”, thereby preventing the low-k or ultra low-k carbon-containing dielectric layer from potential carbon depletion.