Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: Provided is a novel PDGFR kinase inhibitor, comprising a compound of formula (I) or a pharmaceutically acceptable salt, solvate, ester, acid, metabolite or prodrug thereof. Further provided are use and a method of the compound of formula (I) for preventing or treating conditions associated with PDGFR kinase activity, particularly use and a method for preventing or treating conditions associated with PDGFR? and/or PDGFR? kinase activity.

Abstract: An inhibitor of a wild type and Y641F mutant of human histone methyltransferase EZH2 is provided herein. Particularly, the inhibitor is a compound represented by formula (I) or a pharmaceutically acceptable salt thereof. The inhibitor can be used to treat a cancer or precancerous condition related to EZH2 activity.

Abstract: An inhibitor of a wild type and Y641 F mutant of human histone methyltransferase EZH2 is provided herein. Particularly, the inhibitor is a compound represented by formula (I) or a pharmaceutically acceptable salt thereof. The inhibitor can be used to treat a cancer or precancerous condition related to EZH2 activity.

Abstract: To prevent breakage of the segment of an enameled wire that extends between a pin and a winding groove on an insulating stator base, a tension servo of an automatic wire-winding machine in controlled to first wind the enameled wire tightly around the pin of the insulating stator base and then to loosely wind the enameled wire around the pin to form at least one loose winding with a gap between the enameled wire and the pin. The enameled wire is then drawn into the winding groove of the stator base and tightly wound around the stator core within the winding groove. Optionally at least one first loose winding with a gap between the enameled wire and a bottom of the winding groove may initially be formed before tightly winding additional windings within the winding groove.

Abstract: A modular micro-structure light-guide device, that composed of at least a micro-structure light guide unit. Each said micro-structure light guide unit comprises: a light source; a light coupling element, to transmit lights of said light source in parallel; and a light guide body, including at least two light incident surfaces, a micro-structure light uniformed region, a total reflection region, and a light exit surface. Wherein, said at least two light incident surfaces guide lights separately to said micro-structure light uniformed region and said total reflection region, and that reflects lights to exit from said light exit surface.

Abstract: A novel MOS transistor structure and methods of making the same are provided. The structure includes a MOS transistor formed on a semiconductor substrate of a first conductivity type with a plug region of first conductivity type formed in the drain extension region of second conductivity type (in the case of a high voltage MOS transistor) or in the lightly doped drain (LDD) region of second conductivity type (in the case of a low voltage MOS transistor). Such structure leads to higher on-breakdown voltage. The inventive principle applies to MOS transistors formed on bulky semiconductor substrate and MOS transistors formed in silicon-on-insulator configuration.

Abstract: A servo position/stress detection control system has a servomotor, a servo driver and a controller. The servo driver has a control unit, an absolute angle reading unit and a register. The control unit selectively drives or stops the servomotor and converts torque value of the servomotor to a force value. The absolute angle reading unit reads an absolute angle value of rotation in response to a spindle of the servomotor. The controller respectively converts the absolute angle value and the force value to a linear displacement and a load stress value with a calculating program, establishes a load line in response to different force values and corresponding linear displacements wherein the load line provides corresponding correction basis for the servo driver to automatically detect height variances caused by reacting force and accordingly adjust working status of the servomotor.

Abstract: A servo position/stress detection control system has a servomotor, a servo driver and a controller. The servo driver has a control unit, an absolute angle reading unit and a register. The control unit selectively drives or stops the servomotor and converts torque value of the servomotor to a force value. The absolute angle reading unit reads an absolute angle value of rotation in response to a spindle of the servomotor. The controller respectively converts the absolute angle value and the force value to a linear displacement and a load stress value with a calculating program, establishes a load line in response to different force values and corresponding linear displacements wherein the load line provides corresponding correction basis for the servo driver to automatically detect height variances caused by reacting force and accordingly adjust working status of the servomotor.

Abstract: A novel MOS transistor structure and methods of making the same are provided. The structure includes a MOS transistor formed on a semiconductor substrate of a first conductivity type with a plug region of first conductivity type formed in the drain extension region of second conductivity type (in the case of a high voltage MOS transistor) or in the lightly doped drain (LDD) region of second conductivity type (in the case of a low voltage MOS transistor). Such structure leads to higher on-breakdown voltage. The inventive principle applies to MOS transistors formed on bulky semiconductor substrate and MOS transistors formed in silicon-on-insulator configuration.