Abstract: An electronic device may have a display with touch sensors. One or more shielding layers may be interposed between the display and the touch sensors. The display may include transistors with gate conductors, a first planarization layer formed over the gate conductors, one or more contacts formed in a first source-drain layer within the first planarization layer, a second planarization layer formed on the first planarization layer, one or more data lines formed in a second source-drain layer within the second planarization layer, a third planarization layer formed on the second planarization layer, and a data line shielding structure formed at least partly in a third source-drain layer within the third planarization layer. The data line shielding structure may be a routing line, a blanket layer, a mesh layer formed in one or more metal layers, and/or a data line covering another data line.

Abstract: The present disclosure provides an audio compression device, an audio compressing system and an audio compression method. The audio compression device comprises a first transceiver and a first processor. The first transceiver is connected to the first processor. The processor obtains an audio signal and an available bandwidth, and the processor performs an audio compression encoding on the audio signal to obtain a sample audio signal, and then compares with the audio signal and the sample audio signal to generate a residual signal, and the residual signal is transmitted according to the available bandwidth. The audio signal can be completely transmitted to an audio decompression device to reduce the distortion of the audio signal.

Abstract: A communication apparatus and a sound playing method thereof are provided. The method is adapted for a communication apparatus having a first speaker used as an earpiece and a second speaker, in which the first speaker and the second speaker are disposed at opposite sides of the communication apparatus. In the method, an event with a sound notification is detected. A left channel sound and a right channel sound of the sound notification are mixed to generate a mixed sound in response to detecting the event. The mixed sound is played by the first speaker with a fade-in effect.

Abstract: A communication apparatus and a sound playing method thereof are provided. The method is adapted for a communication apparatus having a first speaker used as an earpiece and a second speaker, in which the first speaker and the second speaker are disposed at opposite sides of the communication apparatus. In the method, an event with a sound notification is detected. A left channel sound and a right channel sound of the sound notification are mixed to generate a mixed sound in response to detecting the event. The mixed sound is played by the first speaker with a fade-in effect.

Abstract: An LED package structure and a method of fabricating the same. The LED package structure includes: a package unit including a submount with a cavity, and a light emitting chip disposed in the cavity; a first light-pervious element disposed in the cavity; a multi-layered dam structure concentrically disposed on the first light-pervious element or around a rim of the cavity; a first light-pervious packaging material filled in the dam structure; and a second light-pervious element that combines with the dam structure. Accordingly, the multi-layered dam structure provides an advantage of eliminating gaps and overcomes the problem resulting from the uneven thickness of the first light-pervious packaging material used in the prior technique, thereby ensuring high illumination efficiency and enhanced airtightness.

Abstract: A non-volatile memory system and a method for reading data therefrom are provided. The data comprises a first sub-data and a second sub-data. The non-volatile memory system comprises a first storage unit and a second storage unit, adapted for storing the two sub-data respectively. The first storage unit reads a first command from the controller, and stores the first sub-data temporarily as the first temporary sub-data according to the first command. The second storage unit reads a second command from the controller, and stores the second sub-data temporarily as the second temporary sub-data according to the second command. The first temporary sub-data is read from the first storage unit. Then, the first storage unit reads a third command from the controller. The second temporary sub-data is also read from the second storage unit while reading the third command. The time for reading data from the non-volatile memory system is reduced.

Abstract: A method and related system for programming connections between a NAND flash memory controller and a plurality of NAND flash memory modules includes the NAND flash memory controller generating a switch signal and a swap signal according to a condition of one of the plurality of NAND flash memory modules, a remap module selectively coupling the plurality of NAND flash memory modules to the NAND flash memory controller according to the switch signal, and a swap module selectively coupling the plurality of NAND flash memory modules to the NAND flash memory controller according to the swap signal.

Abstract: A card reader includes a card interface, and one of the pins of the card interface is selected to decide the state of the card interface. The card reader further includes a control circuit to detect the logic state of the selected pin. If the logic state is a first one, the control circuit decides the card interface is enabled; otherwise, if the logic state is a second one, the control circuit decides the card interface is disabled. In some embodiments, a switch is connected between the selected pin and a power supply or a ground terminal, to be switched by a control signal to enable or disable the card interface.

Abstract: A non-volatile memory system and a method for reading data therefrom are provided. The data comprises a first sub-data and a second sub-data. The non-volatile memory system comprises a first storage unit and a second storage unit, adapted for storing the two sub-data respectively. The first storage unit reads a first command from the controller, and stores the first sub-data temporarily as the first temporary sub-data according to the first command. The second storage unit reads a second command from the controller, and stores the second sub-data temporarily as the second temporary sub-data according to the second command. The first temporary sub-data is read from the first storage unit. Then, the first storage unit reads a third command from the controller. The second temporary sub-data is also read from the second storage unit while reading the third command. The time for reading data from the non-volatile memory system is reduced.

Abstract: A method for programming a split gate memory cell comprises the following steps. First, a split gate memory cell formed on a semiconductor substrate of a first conductive type, e.g., p-type, is provided. The split gate memory cell has two bitlines of a second conductive type, e.g., n-type, a select gate, a floating gate, a wordline and a dielectric layer deposited between the floating gate and the semiconductor substrate, wherein the select gate and floating gate are transversely disposed between the two bitlines, the wordline is above the select gate and floating gate. Second, a positive voltage is applied to the wordline so as to turn on the floating gate, and a negative voltage is applied to the bitline next to the floating gate, whereby a bias voltage across the tunnel dielectric layer is generated for programming, that is, the so called F-N programming.

Abstract: A method for programming a split gate memory cell comprises the following steps. First, a split gate memory cell formed on a semiconductor substrate of a first conductive type, e.g., p-type, is provided. The split gate memory cell has two bitlines of a second conductive type, e.g., n-type, a select gate, a floating gate, a wordline and a dielectric layer deposited between the floating gate and the semiconductor substrate, wherein the select gate and floating gate are transversely disposed between the two bitlines, the wordline is above the select gate and floating gate. Second, a positive voltage is applied to the wordline so as to turn on the floating gate, and a negative voltage is applied to the bitline next to the floating gate, whereby a bias voltage across the tunnel dielectric layer is generated for programming, that is, the so called F-N programming.

Abstract: A dirt removing running board for automobile includes a cover, a linkage means, a base frame and two steel wires winding to a motor. The linkage means has an upper bar which has a hollow lower portion for housing the upper portion of a lower bar. There is a spring housed in the hollow portion between the upper and lower bars. The lower bar is thus movable up or down to suit different road conditions. The cover is screwed to the chassis of the automobile. The two ends of the linkage means pivotly engage with the cover and base frame respectively to form a substantially Z-shape structure. The motor can release the steel wires to extend the linkage means perpendicular to the cover and the base frame when in use. When the motor rotates in the opposite direction, the steel wires will pull and fold the linkage means and the base frame to the cover for storage.