Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer, an etch stop layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The etch stop layer includes silicon nitride and is disposed between the semiconductor substrate and the electrical insulating and thermal conductive layer. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

Abstract: A package structure is provided. The package structure includes a first interconnect structure formed over a first substrate. The package structure also includes a second interconnect structure formed below a second substrate. The package structure further includes a bonding structure between the first interconnect structure and the second interconnect structure. In addition, the bonding structure includes a first intermetallic compound (IMC) and a second intermetallic compound (IMC). The bonding structure also includes an underfill layer surrounding the bonding structure. A width of the first IMC is greater than a width of the second IMC, and the underfill layer covers a sidewall of the first IMC and a sidewall of the second IMC.

Abstract: A package structure and method for forming the same are provided. The package structure includes a first interconnect structure formed over a first substrate, and the first interconnect structure includes a first metal layer. The package structure further includes a second interconnect structure formed over a second substrate. The package structure includes a bonding structure between the first interconnect structure and the second interconnect structure. The bonding structure includes a first intermetallic compound (IMC) and a second intermetallic compound (IMC), a portion of the first IMC protrudes from the sidewall surfaces of the second IMC, and there could be a grain boundary between the first IMC and the second IMC.

Abstract: A package structure and method for forming the same are provided. The package structure includes a first interconnect structure formed over a first substrate, and the first interconnect structure includes a first metal layer. The package structure further includes a second interconnect structure formed over a second substrate. The package structure includes a bonding structure between the first interconnect structure and the second interconnect structure. The bonding structure includes a first intermetallic compound (IMC) and a second intermetallic compound (IMC), a portion of the first IMC protrudes from the sidewall surfaces of the second IMC, and there could be a grain boundary between the first IMC and the second IMC.

Abstract: A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.

Abstract: A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.

Abstract: A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.