Patents by Inventor Wen Luh Yang

Wen Luh Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Molding technique for copper interconnecting wires by electrochemical displacement deposition on the pre-shaped metal layer
    Patent number: 7141269
    Abstract: A molding technique for copper interconnecting wires by electrochemical displacement deposition on the pre-shaped metal layer in accordance with the present invention is used to form an adhering layer on a substrate and a sacrificial layer on the adhering layer. The sacrificial layer is patterned according to the copper interconnecting wires and displaced to form the copper interconnecting wires in a specific chemical solution.
    Type: Grant
    Filed: December 3, 2003
    Date of Patent: November 28, 2006
    Assignee: Feng Chia University
    Inventors: Don-Gey Liu, Tsong-Jen Yang, Chin-Hao Yang, Hong-Yuan Hsu, Wen Luh Yang, Giin-Shan Chen
  • Oxygen-removing pre-process for copper interconnect grown by electrochemical displacement deposition
    Patent number: 6838116
    Abstract: A solvent, such as deionized water, is heated up to boil to remove the oxygen dissolved in the water before preparing the plating solutions for the growth of copper interconnects. The resistance of the copper grown from the EDD solutions having undergone the oxygen-removing process is greatly improved, down to a value very close to copper's ideal value.
    Type: Grant
    Filed: November 20, 2003
    Date of Patent: January 4, 2005
    Assignee: Feng Chia University
    Inventors: Don-Gey Liu, Tsong-Jen Yang, Chin-Hao Yang, Wen Luh Yang, Giin-Shan Chen
  • Molding technique for copper interconnecting wires by electrochemical displacement deposition on the pre-shaped metal layer
    Publication number: 20040222558
    Abstract: A molding technique for copper interconnecting wires by electrochemical displacement deposition on the pre-shaped metal layer in accordance with the present invention is used to form an adhering layer on a substrate and a sacrificial layer on the adhering layer. The sacrificial layer is patterned according to the copper interconnecting wires and displaced to form the copper interconnecting wires in a specific chemical solution.
    Type: Application
    Filed: December 3, 2003
    Publication date: November 11, 2004
    Inventors: Don-Gey Liu, Tsong-Jen Yang, Chin-Hao Yang, Hong-Yuan Hsu, Wen Luh Yang, Giin-Shan Chen
  • Oxygen-removing pre-process for copper interconnect grown by electrochemical displacement deposition
    Publication number: 20040108221
    Abstract: An oxygen-removing pre-process for copper interconnect grown by electrochemical displacement deposition is to remove the oxygen in the reaction solution before displacement and deposition a copper film/conducting wire such that the copper film/conducting wire is grown and has a lower electric resistance.
    Type: Application
    Filed: November 20, 2003
    Publication date: June 10, 2004
    Inventors: Don-Gey Liu, Tsong-Jen Yang, Chin-Hao Yang, Wen Luh Yang, Giin-Shan Chen
  • Fast diffusion recipe for silicon by NO complexes
    Publication number: 20030100170
    Abstract: The present invention relates to a fast diffusion recipe for making silicon by NO complexes, which can quicken impurities diffusion by NO complexes, thus reducing effectiveness for a given period of time and cost of production. When it is used to make CMOS well, processing period would be more rapidly. Because of the produced interface depth is affected by ventilation at stage of heat treatment, and obtaining deeper depth by N2O compared with using traditional N2, it is thus clear that this recipe features application and use value.
    Type: Application
    Filed: November 29, 2001
    Publication date: May 29, 2003
    Applicant: Feng-Chia University
    Inventors: Wen-Luh Yang, Don-Gey Liu, Tsong-Jen Yang, Giin-Shan Chen, Kuo Wei Chu