Abstract: Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.

Abstract: A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, where the shower head is coated with a hydrophobic film. A patterned photoresist layer is formed on the metal oxide film. The metal oxide film is patterned by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film. The target layer is patterned by using the patterned metal oxide film as a mask.

Abstract: Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.

Abstract: Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.

Abstract: Provided is a deposition apparatus including a process chamber, a wafer platen and a shower head. The wafer platen is disposed in the process chamber. The shower head is located over the wafer platen and includes a shower plate and a hydrophobic film. The shower head has a plurality of dispensing holes for a reaction gas to pass through. The hydrophobic film is coated on a surface of the shower plate and surfaces of the plurality of dispensing holes. A method of forming a metal oxide layer using the deposition apparatus is further provided.

Abstract: A semiconductor apparatus is provided. The semiconductor apparatus includes a wafer carrier, and a cup surrounding the wafer carrier. The semiconductor apparatus also includes a bottom washing device located between the wafer carrier and the cup, and configured to spray washing liquid onto the cup. Therefore, the cup can be washed by the bottom washing device.

Abstract: A semiconductor apparatus is provided. The semiconductor apparatus includes a wafer carrier, and a cup surrounding the wafer carrier. The semiconductor apparatus also includes a bottom washing device located between the wafer carrier and the cup, and configured to spray washing liquid onto the cup. Therefore, the cup can be washed by the bottom washing device.

Abstract: Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure is provided. The semiconductor device structure includes a substrate having a front side and a back side. The semiconductor device structure also includes devices formed on the front side of the substrate and interconnect structures formed on the devices. The semiconductor device structure further includes a protection layer formed on the back side of the substrate, and the protection layer has a thickness over about 10 A.

Abstract: A semiconductor structure includes a substrate, an imaging pixel array disposed on a first region of the substrate, a first isolation disposed in the first region, a periphery circuitry disposed on a second region of the substrate, and a second isolation disposed in the second region. The imaging pixel array has a plurality of imaging pixels configured to capture image data. The periphery circuitry has a transistor configured to receive and process the image data. The first isolation has a first depth and a first protrusion projected from a surface of the substrate. The second isolation has a second depth and a second protrusion projected from the surface of the substrate. The first protrusion has a substantially same height as the second protrusion. The first depth is different from the second depth.

Abstract: A semiconductor structure includes a substrate, an imaging pixel array disposed on a first region of the substrate, a first isolation disposed in the first region, a periphery circuitry disposed on a second region of the substrate, and a second isolation disposed in the second region. The imaging pixel array has a plurality of imaging pixels configured to capture image data. The periphery circuitry has a transistor configured to receive and process the image data. The first isolation has a first depth and a first protrusion projected from a surface of the substrate. The second isolation has a second depth and a second protrusion projected from the surface of the substrate. The first protrusion has a substantially same height as the second protrusion. The first depth is different from the second depth.

Abstract: Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure is provided. The semiconductor device structure includes a substrate having a front side and a back side. The semiconductor device structure also includes devices formed on the front side of the substrate and interconnect structures formed on the devices. The semiconductor device structure further includes a protection layer formed on the back side of the substrate, and the protection layer has a thickness over about 10 A.

Abstract: A hand tool for rolling an O-ring under a downward pressure into a slot opening is described. The hand tool is constructed by a tool body that has an arcuate top surface adapted for gripping by a human hand and a planar bottom surface. The planar bottom surface of the tool body is provided with a cavity adapted for receiving a pair of rotatable balls mounted juxtaposed to each other. The pair of rotatable balls are mounted on a shaft through a center aperture of the balls in the cavity in such a way that only less than half of the spherical surface of the balls is protruding beyond the planar bottom surface of the tool body.

Abstract: An improved ion source head for use with an ion implantation machine includes an arc chamber within which a heated filament creates an ion plasma from a source gas. The source gas is introduced into the chamber evenly through at least four, but preferably six through hole openings in a bottom liner in the chamber. Even distribution of the gas entering the chamber reduces build-up and flaking of material in the chamber that can result in short circuits.

Abstract: A not rotatable enclosing buckle of fabric article, including a female buckle body formed with a shaft hole passing through a bottom end thereof and a male buckle body including a main body and a nail post upward projecting from the main body. The nail post penetrates through the fabric article and inserting into the shaft hole of the female buckle body so as to latch the male and female buckle bodies on the fabric article. A stem of the nail post is formed with at least one rib. The rib and the longitudinal axis of the stem contain an angle other than 90 degrees. The rib defines a maximum outer circumference of the stem, whereby the rib meshes with the peripheral wall of the shaft hole to prevent the male and female buckle bodies from rotating relative to each other.

Abstract: A cap crown button comprises a female retaining body, a decorating cloth, a fastening element, and a male retaining body. The female retaining body has an arcuate top, a periphery and a receiving space provided centrally with a projection having an axial hole which is provided therein with a shoulder. The projection has a belly portion. The female retaining body is covered with the decorating cloth. The fastening element is located in the receiving space such that the fastening element fastens the decorating cloth which extends into the receiving space. The male retaining body comprises a disklike bottom and a nail having thereon a tapered head capable of piercing the cap crown to engage the axial hole of the projection of the female retaining body. The female retaining body has a mating sustaining portion for supporting the head.

Abstract: A cap crown button comprises a female retaining body, a decorating cloth, a fastening element, and a male retaining body. The female retaining body has an arcuate top, a periphery and a receiving space provided centrally with a projection having an axial hole which is provided therein with a shoulder. The projection has a belly portion. The female retaining body is covered with the decorating cloth. The fastening element is located in the receiving space such that the fastening element fastens the decorating cloth which extends into the receiving space. The male retaining body comprises a disklike bottom and a nail having thereon a tapered head capable of piercing the cap crown to engage the axial hole of the projection of the female retaining body.