Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: An electronic device including a hinge module, a first body, a second body, and a flexible display assembled to the first body and the second body is provided. Each of the first body and the second body is pivoted and slidably connected to the hinge module, and a cover of the hinge module is exposed out of the first body and the second body. The first body and the second body are rotated relatively via the hinge module to bend or flatten the flexible display, when the flexible display is bending from a flat state, a bending portion of the flexible display leans against the cover and pushes the cover away from the first body and the second body.

Abstract: A manufacturing method of housing structure of electronic device is provided. The manufacturing method includes stacking a first structural layer, a painting layer, and a second structural layer, wherein the painting layer is located between the first and the second structural layers. The layer stacked after the painting layer washes and squeezes at least a portion of the flowing painting layer to form a random texture pattern.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over a semiconductor die. A portion of the RDL contacts a die pad of the semiconductor die. A metal layer is formed on a top surface and sidewalls of the RDL and configured to encase the RDL. A non-conductive layer is formed over the metal layer and underlying RDL. An opening in the non-conductive layer is formed exposing a portion of the metal layer formed on the RDL. An under-bump metallization (UBM) is formed in the opening and conductively connected to the die pad by way of the metal layer and RDL.

Abstract: A switch module with an automatic switching function and a method for automatically switching the switch module according to the load, wherein a first comparator and a second comparator are configured to automatically determine whether the load is light or heavy according to the voltage divided by a first resistor and a second resistor and the voltage of a source resistor, thereby generating a voltage control signal. A plurality of transistors are configured to receive a gate input signal according to the voltage control signal, thereby selectively bringing a GaN transistor or a MOSFET transistor in a conducting state. In this way, the output quality and efficiency of the power supply at light and heavy loads can be improved according to the characteristics of different transistors.

Abstract: A packaging structure with a magnetocaloric material, comprising a substrate, a plurality of electrical connection structures, a die, and a sealing compound. A magnetocaloric material is added to the substrate. The die is electrically connected to the substrate through the electrical connection structures, and then encapsulated with the sealing compound. When the packaging structure is turned on, the magnetocaloric material in the substrate creates a magnetocaloric effect, which can not only take away the temperature of the packaging structure through magnetic refrigeration, but also increase the temperature difference between the packaging structure and the outside, thereby improving the efficiency of heat dissipation.

Abstract: An electromagnetic interference regulator by use of capacitive parameters of the field-effect transistor for detecting the induced voltage and the induced current of the field-effect transistor to determine whether the operating frequency of the field-effect transistor is within the preset special management frequency of electromagnetic interference. When the basic frequency and the multiplied frequency exceed the limit, the content of the external capacitor unit can be adjusted to assist the products using field-effect transistors to maintain excellent electromagnetic interference adjustment capabilities under various loads, thereby optimizing the characteristics of electromagnetic interference.

Abstract: A circuit with a metal-oxide semiconductor field-effect transistor and a diode module is applied to a power factor correction circuit, which can effectively reduce the heat generated by the whole system under heavy load. The circuit includes a metal-oxide semiconductor field-effect transistor and a diode module and a load determination unit. The diode module includes a plurality of diodes with a switch. The load determination unit can control the connection/disconnection of each diode in the diode module based on the magnitude of the load current. It can effectively reduce the current generated by each diode due to the load, thereby reducing the heat generation of the overall system. Moreover, due to the contact capacitance effect after the diodes are connected in parallel, the electromagnetic interference (EMI) characteristics of the power factor correction circuit of the system can be further optimized.

Abstract: An electromagnetic interference regulator by use of capacitive parameters of the field-effect transistor for detecting the induced voltage and the induced current of the field-effect transistor to determine whether the operating frequency of the field-effect transistor is within the preset special management frequency of electromagnetic interference. When the basic frequency and the multiplied frequency exceed the limit, the content of the external capacitor unit can be adjusted to assist the products using field-effect transistors to maintain excellent electromagnetic interference adjustment capabilities under various loads, thereby optimizing the characteristics of electromagnetic interference.

Abstract: A circuit with a metal-oxide semiconductor field-effect transistor and a diode module is applied to a power factor correction circuit, which can effectively reduce the heat generated by the whole system under heavy load, The circuit includes a metal-oxide semiconductor field-effect transistor and a diode module and a load determination unit. The diode module includes a plurality of diodes with a switch. The load determination unit can control the connection/disconnection of each diode in the diode module based on the magnitude of the load current. It can effectively reduce the current generated by each diode due to the load, thereby reducing the heat generation of the overall system. Moreover, due to the contact capacitance effect after the diodes are connected in parallel, the electromagnetic interference (EMI) characteristics of the power factor correction circuit of the system can be further optimized.

Abstract: A metal-oxide semiconductor field-effect transistor with asymmetric parallel die and an implementation method thereof, comprising an inductor, a load recognition control unit and a metal-oxide semiconductor field-effect transistor having a first die, a second die, and a switch. The first die is larger in size than the second die. The inductor can produce a voltage signal when the load changes. The switch is controlled by the load recognition control unit such that different dies are switched on under different load conditions, thereby improving efficiency under light load condition in addition to reducing volume and cost.

Abstract: A hybrid metal-oxide semiconductor field-effect transistor with variable gate impedance and an implementation method thereof, wherein the hybrid metal-oxide semiconductor field-effect transistor has the characteristic of changing the on-resistance according to different drive voltages. By use of a feedback loop and a variable gate drive voltage generator which can vary the generated gate drive voltage based on different loads, the present disclosure can still adjust the gate drive voltage under different load conditions without requiring a plurality of metal-oxide semiconductor field-effect transistors in series/parallel to achieve the lowest power loss.

Abstract: A totem-pole bridgeless PFC conversion device includes a conversion unit, a control unit, a current detecting unit and a phase detecting unit. When the control unit determines that a peak value of an input current is within a predetermined interval between a positive current value and a negative current value based on a current signal of the current detecting unit and a phase signal of the phase detecting unit, the control unit controls the conversion unit to operate in a discontinuous conduction mode (DCM). When the control unit determines that the peak value of the input current is not within the predetermined interval, the control unit controls the conversion unit to operate in a critical conduction mode (CRM).

Abstract: A power supply device and a power supply method are provided. The power supply device is configured to generate a first feedback signal according to an output power source, and operate in a skip mode (or called burst mode) according to the first feedback signal. The power supply device is configured to obtain an overall efficiency according to an input power and an output power, and obtain a difference between the overall efficiency and a preset efficiency. When an output current value of the output power source is within a predetermined range and the difference is greater than a first value, the power supply device generates a second feedback signal and stops operating in the skip mode according to the second feedback signal.

Abstract: A power supply device is provided. The power supply device includes a power converter and a control circuit. The control circuit is coupled to a power converter. The power converter is configured to convert input power to provide output power. The control circuit is configured to receive a control signal and provide a dummy current according to the control signal and the output power, so that the sum of a current value of the dummy current and a current value of the output power is greater than or equal to a threshold value. The power converter can accordingly convert the input power in a soft switching manner.

Abstract: A surge voltage protection apparatus includes a surge voltage absorbing component, a ground component, an electrical status sensing circuit and a control unit. The surge voltage absorbing component receives a surge voltage, so that the electrical status sensing circuit senses an electrical status between the surge voltage absorbing component and the ground component to obtain an electrical data. The electrical status sensing circuit sends the electrical data to the control unit. After the control unit receives the electrical data, the control unit determines the electrical data. When the electrical data is greater than an electrical data predetermined value, the control unit informs a power supply apparatus that the electrical data is greater than the electrical data predetermined value, so that the power supply apparatus is turned off to protect the power supply apparatus.

Abstract: A power supply module coupled with a primary winding of a power conversion module, the power supply module includes a plurality of power-controlling modules, a plurality of second switches, and a microprocessor. Each power-controlling module includes an auxiliary winding and a first switch electrically connected in series, and each auxiliary winding is magnetic coupled with the primary winding. Each second switch is electrically connected to one of the power-controlling units. The microprocessor is electrically connected to the first switches of the power-controlling modules and the second switches. The microprocessor places at least one first switch and one of the second switches in a conducting state to make the first switch in the conducting state and the second switch in the conducting state electrically connect in series and output an electric power to power the power conversion module.

Abstract: An AC inrush current testing device is disclosure. The AC inrush current testing device includes a grid voltage peak point calculator, a grid voltage period and timing detector, a switch, an autotransformer, and a main relay. The grid voltage period and timing detector is connected to an AC power source and the grid voltage peak point calculator. A movable contact of the switch is connected to the AC power source. A first winding of the autotransformer is connected to the AC power source, a second winding of the autotransformer, and a first stationary contact of the switch. A third winding of the autotransformer is connected to a second stationary contact of the switch and the second winding. The main relay is electrically connected to the grid voltage peak point calculator, the second winding, and the third winding. A method for testing AC inrush current is further disclosed.

Abstract: An AC input voltage detecting device includes a first input, a second input, a determining unit, a first voltage-detecting unit, and a second voltage-detecting unit. The first input and the second input are electrically connected to a neutral line and a live line of an AC power, respectively. The determining unit includes a first power switch, a second power switch, and an output, the first and second power switch are electrically connected in series, and the output is coupled to the second power switch. The first voltage-detecting unit is electrically connected to the first input and the first power switch, the second voltage-detecting unit is electrically connected to the second input and the second power switch. A signal for indicating that the AC power supplies normally is generated from the determining unit while the voltages conducted by the live line and the neutral line are normal.

Abstract: A filtering module includes a first inductor and a first capacitor. The first inductor has a first inductance varied by varying the current into the first inductor. The first capacitor is electrically connected to the first inductor. The filtering bandwidth of the filtering module is varied by varying the current into the filtering module.