Abstract: A method of prevention maintenance preventing parts of an etcher from being eroded is disclosed. First, a layer of hydrogen-free chemical compound is formed on surface of the parts of the etcher according to one embodiment of the present invention. Otherwise, the parts of the etcher are immersed into a tank containing hydrogen-free chemical compound according to another embodiment of the present invention. After that, a standard process of prevention maintenance is performed by a cleaning agent.

Abstract: An apparatus for maintaining semiconductor is disclosed. The cleaning apparatus includes two parts of a maintaining apparatus and gas-absorbing apparatus The maintaining apparatus mainly comprises a container using for isolating poison gas outside and a inner vessel, both being shaped as a cylinder, having an absorption exit with hose extending. There are an entrance and an exit end for absorption exit of container as well. This absorption exit is formed as for receiving and passing toxic gas. The vessel is as like cylinder shape and which has a hole on the top, also a plurality of holes embodied on the vessel for gas exiting. A disk is provided for covering the vessel container, and also for isolating toxic gas and the natural atmosphere. A plurality of rollers is for providing both functions of loading and rotation of vessel. The gas-absorbing apparatus can provide a source for absorbing gas quickly as well.

Abstract: A method used in some step of processing for ashing a photoresist resin film of a semiconductor wafer is disclosed. Generally the present method will conclude the following steps. Firstly adjusting Etch-Module-Asher endpoint is carried out. Then placing the substrate coated with the resist film in a vacuum chamber will be achieved. The next step is that positing silicon wafer into asher through the vacuum chamber having a wafer holding-set plate, it is for closely receiving and orderly stepped ranking the wafer. Here, the silicon wafer is pushed to the chamber. Finally, the last process is that adjusting second Etch-Module-Asher Endpoint. Simultaneously ashing the resist film by an oxygen plasma is carried out while heating the substrate to remove the resist film, therefore photoresist is peeled up a first end of the silicon wafer and the silicon wafer is cleaned up and the other end of the silicon wafer.

Abstract: The present invention relates to a method for prolonging life time of a dry etching chamber. A neck portion of the dry etching chamber, according to the present invention, is divided three sections, namely a first section, a second section and a third section in sequence from top of the neck portion to bottom thereof and each section has the same area. A first phase of a two-phase connection method, according to the present invention, then proceeds as the following. The first section is surrounded by an electrode coil connected to a rf power and the second section is surrounded by an electrode coil connected to the ground, not touching the electrode coil connected to the rf power, so that a plasma field within the dry etching chamber can be produced to perform a dry etching. The dry etching can be applied in production line until before life time of the first section comes to an end, i.e. about 95 % of life time of the dry etching chamber disclosed in prior art.