Abstract: The present invention provides a general four-port on-wafer high frequency de-embedding method. The method comprises: for each on-wafer de-embedding dummy, building a model considering the distributive nature of high frequency characteristics of the on-wafer de-embedding dummy; obtaining the intrinsic Y-parameter admittance matrix of said N on-wafer de-embedding dummies by calculation or simulation by using said models; and solving the equation set which the corresponding measurement and calculation or simulation data of said on-wafer de-embedding dummies satisfy for the elements of the related admittance matrices of the parasitic four-port network to be stripped in de-embedding and model parameters of models on which said calculation or simulation is based.

Abstract: The present invention provides a general four-port on-wafer high frequency de-embedding method. The method comprises: for each on-wafer de-embedding dummy, building a model considering the distributive nature of high frequency characteristics of the on-wafer de-embedding dummy; obtaining the intrinsic Y-parameter admittance matrix of said N on-wafer de-embedding dummies by calculation or simulation by using said models; and solving the equation set which the corresponding measurement and calculation or simulation data of said on-wafer de-embedding dummies satisfy for the elements of the related admittance matrices of the parasitic four-port network to be stripped in de-embedding and model parameters of models on which said calculation or simulation is based.