Patents by Inventor Wensheng Ren

Wensheng Ren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130178011
    Abstract: Dopant compositions comprising a semiconductor material are described. Examples of dopant compositions comprise a particulate dopant component and a liquid or paste component, or comprise a dopant component and a particulate silicon component. Methods of forming doped regions in a semiconductor substrate material using the dopant compositions are described. A dopant composition including a dopant particulate component is described as a dopant source in a method for the formation of radiation-fired or radiation-doped contacts, for example in the formation of laser-fired or laser-doped contacts. Examples of the method find application in relation to the manufacture of photovoltaic cells. The use of doped particulate material, for example a composition including doped silicon powder, may reduce the likelihood of damage to the substrate.
    Type: Application
    Filed: August 29, 2012
    Publication date: July 11, 2013
    Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLC
    Inventors: David S. Ginley, Calvin J. Curtis, Marinus Franciscus Antonius Maria van Hest, Heather A. S. Platt, Alexander Miedaner, David E. Carlson, Murry S. Bennett, Wensheng Ren
  • Patent number: 8248688
    Abstract: Embodiments of laser systems advantageously use pulsed optical fiber-based laser source (12) output, the temporal pulse profile of which may be programmed to assume a range of pulse shapes. Pulsed fiber lasers are subject to peak power limits to prevent an onset of undesirable nonlinear effects; therefore, the laser output power of these devices is subsequently amplified in a diode-pumped solid state photonic power amplifier (DPSS-PA) (16). The DPSS PA provides for amplification of the desirable low peak power output of a pulsed fiber master oscillator power amplifier (14) to much higher peak power levels and thereby also effectively increases the available energy per pulse at a specified pulse repetition frequency. The combination of the pulsed fiber master oscillator power amplifier and the diode-pumped solid state power amplifier is referred to as a tandem solid state photonic amplifier (10).
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: August 21, 2012
    Assignee: Electro Scientific Industries, Inc.
    Inventors: Brian W. Baird, David M. Hemenway, Xiaoyuan Peng, Wensheng Ren
  • Publication number: 20120092755
    Abstract: Embodiments of laser systems advantageously use pulsed optical fiber-based laser source (12) output, the temporal pulse profile of which may be programmed to assume a range of pulse shapes. Pulsed fiber lasers are subject to peak power limits to prevent an onset of undesirable nonlinear effects; therefore, the laser output power of these devices is subsequently amplified in a diode-pumped solid state photonic power amplifier (DPSS-PA) (16). The DPSS PA provides for amplification of the desirable low peak power output of a pulsed fiber master oscillator power amplifier (14) to much higher peak power levels and thereby also effectively increases the available energy per pulse at a specified pulse repetition frequency. The combination of the pulsed fiber master oscillator power amplifier and the diode-pumped solid state power amplifier is referred to as a tandem solid state photonic amplifier (10).
    Type: Application
    Filed: July 25, 2007
    Publication date: April 19, 2012
    Applicant: Electro Scientific Industries, Inc.
    Inventors: Brian W. Baird, David M. Hemenway, Xiaoyuan Peng, Wensheng Ren
  • Patent number: 7813394
    Abstract: High-power, diode-pumped solid state (DPSS) pulsed lasers are preferred for applications such as micromachining, via drilling of integrated circuits, and ultraviolet (UV) conversion. Nd:YVO4 (vanadate) lasers are good candidates for high power applications because they feature a high energy absorption coefficient over a wide bandwidth of pumping wavelengths. However, vanadate has poor thermo-mechanical properties, in that the material is stiff and fractures easily when thermally stressed. By optimizing laser parameters and selecting pumping wavelengths and doping a concentration of the gain medium to control the absorption coefficient less than 2 cm?1 such as the pumping wavelength between about 910 nm and about 920 nm, a doped vanadate laser may be enhanced to produce as much as 100 W of output power without fracturing the crystal material, while delivering a 40% reduction in thermal lensing.
    Type: Grant
    Filed: April 1, 2010
    Date of Patent: October 12, 2010
    Assignee: Electro Scientific Industries, Inc.
    Inventors: Xiaoyuan Peng, Wensheng Ren
  • Patent number: 7796671
    Abstract: Anisotropic crystals such as Nd:YVO4, Nd:YLF, and Nd:GdVO4 have become preferred gain materials for many laser applications. The anisotropic gain medium without ancillary compensation ensures there is no degradation of laser modes when passing through the gain medium. An optical power amplifier that incorporates an anisotropic gain medium achieves power scaling with multiple passes while also maintaining good mode matching between the laser and the pump during each pass. Preferred embodiments implement for multiple passes of a seed laser beam through an anisotropic gain medium with substantially zero angular beam displacement during each pass. The multi-pass system provides an economical, reliable method of achieving high TEM00 power to meet the demands of micromachining, via drilling, and harmonic conversion applications.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: September 14, 2010
    Assignee: Electro Scientific Industries, Inc.
    Inventors: Xiaoyuan Peng, Wensheng Ren
  • Publication number: 20100189145
    Abstract: High-power, diode-pumped solid state (DPSS) pulsed lasers are preferred for applications such as micromachining, via drilling of integrated circuits, and ultraviolet (UV) conversion. Nd:YVO4 (vanadate) lasers are good candidates for high power applications because they feature a high energy absorption coefficient over a wide bandwidth of pumping wavelengths. However, vanadate has poor thermo-mechanical properties, in that the material is stiff and fractures easily when thermally stressed. By optimizing laser parameters and selecting pumping wavelengths and doping a concentration of the gain medium to control the absorption coefficient less than 2 cm?1 such as the pumping wavelength between about 910 nm and about 920 nm, a doped vanadate laser may be enhanced to produce as much as 100 W of output power without fracturing the crystal material, while delivering a 40% reduction in thermal lensing.
    Type: Application
    Filed: April 1, 2010
    Publication date: July 29, 2010
    Applicant: Electro Scientific Industries, Inc.
    Inventors: Xiaoyuan Peng, Wensheng Ren
  • Patent number: 7720121
    Abstract: High-power, diode-pumped solid state (DPSS) pulsed lasers are preferred for applications such as micromachining, via drilling of integrated circuits, and ultraviolet (UV) conversion. Nd:YVO4 (vanadate) lasers are good candidates for high power applications because they feature a high energy absorption coefficient over a wide bandwidth of pumping wavelengths. However, vanadate has poor thermo-mechanical properties, in that the material is stiff and fractures easily when thermally stressed. By optimizing laser parameters and selecting pumping wavelengths and doping a concentration of the gain medium to control the absorption coefficient less than 2 cm?1 such as the pumping wavelength between about 910 nm and about 920 nm, a doped vanadate laser may be enhanced to produce as much as 100 W of output power without fracturing the crystal material, while delivering a 40% reduction in thermal lensing.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: May 18, 2010
    Assignee: Electro Scientific Industries, Inc.
    Inventors: Xiaoyuan Peng, Wensheng Ren
  • Publication number: 20090245304
    Abstract: Anisotropic crystals such as Nd:YVO4, Nd:YLF, and Nd:GdVO4 have become preferred gain materials for many laser applications. The anisotropic gain medium without ancillary compensation ensures there is no degradation of laser modes when passing through the gain medium. An optical power amplifier that incorporates an anisotropic gain medium achieves power scaling with multiple passes while also maintaining good mode matching between the laser and the pump during each pass. Preferred embodiments implement for multiple passes of a seed laser beam through an anisotropic gain medium with substantially zero angular beam displacement during each pass. The multi-pass system provides an economical, reliable method of achieving high TEM00 power to meet the demands of micromachining, via drilling, and harmonic conversion applications.
    Type: Application
    Filed: March 31, 2008
    Publication date: October 1, 2009
    Applicant: Electro Scientific Industries, Inc.
    Inventors: Xiaoyuan Peng, Wensheng Ren
  • Publication number: 20090245317
    Abstract: High-power, diode-pumped solid state (DPSS) pulsed lasers are preferred for applications such as micromachining, via drilling of integrated circuits, and ultraviolet (UV) conversion. Nd:YVO4 (vanadate) lasers are good candidates for high power applications because they feature a high energy absorption coefficient over a wide bandwidth of pumping wavelengths. However, vanadate has poor thermo-mechanical properties, in that the material is stiff and fractures easily when thermally stressed. By optimizing laser parameters and selecting pumping wavelengths and doping a concentration of the gain medium to control the absorption coefficient less than 2 cm?1 such as the pumping wavelength between about 910 nm and about 920 nm, a doped vanadate laser may be enhanced to produce as much as 100 W of output power without fracturing the crystal material, while delivering a 40% reduction in thermal lensing.
    Type: Application
    Filed: March 28, 2008
    Publication date: October 1, 2009
    Applicant: Electro Scientific Industries, Inc.
    Inventors: Xiaoyuan Peng, Wensheng Ren