Patents by Inventor Wen-Sheng Wu
Wen-Sheng Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240139990Abstract: An internal rotor type nail drive device of electric nail gun, comprising a nailing rod and an internal rotor type rotary actuator that can output a specific rotation angle and can drive the nailing rod to move downward for nailing. Specifically, the rotary actuator comprises a stator and a rotor arranged inside the stator, even groups of electromagnetic mutual action components are configured in pairs between the stator and the rotor, to generate a tangential force to drive the rotor to rotate for a specific rotation angle, and to drive the nailing rod to move for a nailing stroke. The nailing stroke can be determined by a specific rotation angle. Thus, through the above configuration of the rotary actuator, the structure of the electric nail gun can be simplified, and the kinetic energy for nailing can be increased.Type: ApplicationFiled: August 22, 2023Publication date: May 2, 2024Inventors: I-TSUNG WU, CHIA-SHENG LIANG, YU-CHE LIN, WEN-CHIN CHEN
-
Publication number: 20240120304Abstract: The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a package structure, a circuit structure, a bonding structure and an external element. The circuit structure is disposed on the package structure and is electrically connected to the package structure. The circuit structure has a recess. The bonding structure includes a first bonding pad and a second bonding pad. The second bonding pad is disposed in the recess, and the second bonding pad is disposed on the first bonding pad. The bonding structure is disposed between the circuit structure and the external element. The external element is electrically connected to the circuit structure through the bonding structure. A width of the first bonding pad is smaller than a width of the second bonding pad.Type: ApplicationFiled: November 24, 2022Publication date: April 11, 2024Applicant: Innolux CorporationInventors: Tzu-Sheng Wu, Haw-Kuen Liu, Chung-Jyh Lin, Cheng-Chi Wang, Wen-Hsiang Liao, Te-Hsun Lin
-
Patent number: 10011532Abstract: A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.Type: GrantFiled: February 2, 2015Date of Patent: July 3, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fei-Fan Chen, Wen-Sheng Wu, Chien Kuo Huang
-
Publication number: 20170368119Abstract: The present invention provides the use of a fungal immunomodulatory protein (FIP) in manufacturing a medicament for inhibiting hepatocyte growth factor receptor (HGFR) activity in a cell, and for treating HGFR-associated cancer.Type: ApplicationFiled: August 28, 2015Publication date: December 28, 2017Applicant: YEASTERN BIOTECH CO., LTDInventors: Wen-Sheng Wu, Jia-Ru Wu, Chi-Tan Hu, Ren-In You, Pei-Ling Ma, Tzu-Chih Chen
-
Patent number: 9728669Abstract: A method of manufacturing solar cell includes providing a semiconductor substrate. A coating layer is then formed on a plurality of sides. Subsequently, an anti-reflective layer is formed on the layer. Finally at least one first electrode and at least one second electrode are formed. The first and second electrodes respectively and electrically connect to the second conductive amorphous substrate and the semiconductor substrate. The potential induced degradation is greatly reduced.Type: GrantFiled: June 24, 2013Date of Patent: August 8, 2017Assignee: Sino-American Silicon Products Inc.Inventors: Budi Tjahjono, Ming-Jui Yang, Chuan-Wen Ting, Yu-Ting Chiu, Jen-Ting Tan, Wen Sheng Wu, Kuo-Wei Shen, Fang-Wei Hu
-
Publication number: 20160005915Abstract: A method for inhibiting light-induced degradation of a photovoltaic device includes steps of: a) subjecting the photovoltaic device to an illumination treatment using a light having a wavelength not less than 300 nm to heat the photovoltaic device in the absence of ambient light; and b) maintaining the temperature of the photovoltaic device above an annealing temperature of the photovoltaic device for at least 0.5 minute. An apparatus for inhibiting light-induced degradation of a photovoltaic device is also disclosed.Type: ApplicationFiled: July 1, 2015Publication date: January 7, 2016Applicant: Sino-American Silicon Products Inc.Inventors: Budi Tjahjono, Ming-Jui Yang, Chien-Hong Liu, Kuo-Wei Shen, Chuan-Wen Ting, Wen-Sheng Wu
-
Publication number: 20150155185Abstract: A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.Type: ApplicationFiled: February 2, 2015Publication date: June 4, 2015Inventors: Fei-Fan Chen, Wen-Sheng Wu, Chien Kuo Huang
-
Publication number: 20150096613Abstract: The invention provides a photovoltaic device and method of manufacturing the same. The photovoltaic device of the invention includes a semiconductor structure assembly and a protection layer. The semiconductor structure assembly has a plurality of side surfaces, and includes a p-n junction, an n-p junction, a p-i-n junction, an n-i-p junction, a tandem junction or a multi-junction. In particular, the protection layer is formed to overlay the sides of the semiconductor structure assembly. Thereby, the protection layer can effectively inhibit the potential-induced degradation effect of the photovoltaic device of the invention.Type: ApplicationFiled: December 12, 2014Publication date: April 9, 2015Inventors: BUDI TJAHJONO, MING-JUI YANG, CHUAN-WEN TING, WEN SHENG WU, KUO-WEI SHEN, CHIEN HONG LIU
-
Patent number: 8944003Abstract: A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.Type: GrantFiled: November 16, 2012Date of Patent: February 3, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fei-Fan Chen, Wen-Sheng Wu, Chien Kuo Huang
-
Patent number: 8889435Abstract: A first embodiment is a method for semiconductor processing. The method comprises forming a component on a wafer in a chamber; determining a non-uniformity of the plasma in the chamber, the determining being based at least in part on the component on the wafer; and providing a material on a surface of the chamber corresponding to the non-uniformity. The forming the component includes using a plasma. The material can have various shapes, compositions, thicknesses, and/or placements on the surface of the chamber. Other embodiments include a chamber having a material on a surface to control a plasma uniformity.Type: GrantFiled: September 29, 2011Date of Patent: November 18, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Sheng Wu, Fei-Fan Chen, Chia-I Shen, Hua-Sheng Chiu
-
Publication number: 20140251421Abstract: A method of manufacturing solar cell includes providing a semiconductor substrate. A coating layer is then formed on a plurality of sides. Subsequently, an anti-reflective layer is formed on the layer. Finally at least one first electrode and at least one second electrode are formed. The first and second electrodes respectively and electrically connect to the second conductive amorphous substrate and the semiconductor substrate. The potential induced degradation is greatly reduced.Type: ApplicationFiled: June 24, 2013Publication date: September 11, 2014Inventors: BUDI TJAHJONO, MING-JUI YANG, CHUAN-WEN TING, YU-TING CHIU, JEN-TING TAN, WEN SHENG WU, KUO-WEI SHEN, FANG-WEI HU
-
Publication number: 20140141614Abstract: A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.Type: ApplicationFiled: November 16, 2012Publication date: May 22, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fei-Fan Chen, Wen-Sheng Wu, Chien Kuo Huang
-
Publication number: 20130084657Abstract: A first embodiment is a method for semiconductor processing. The method comprises forming a component on a wafer in a chamber; determining a non-uniformity of the plasma in the chamber, the determining being based at least in part on the component on the wafer; and providing a material on a surface of the chamber corresponding to the non-uniformity. The forming the component includes using a plasma. The material can have various shapes, compositions, thicknesses, and/or placements on the surface of the chamber. Other embodiments include a chamber having a material on a surface to control a plasma uniformity.Type: ApplicationFiled: September 29, 2011Publication date: April 4, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Sheng Wu, Fei-Fan Chen, Chia-I Shen, Hua-Sheng Chiu
-
Patent number: 8404135Abstract: A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process deposits from the exterior surface of the chamber component.Type: GrantFiled: August 26, 2008Date of Patent: March 26, 2013Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jian-Bin Chiou, Wen-Cheng Cheng, Wen-Sheng Wu
-
Patent number: 8093074Abstract: An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not.Type: GrantFiled: December 18, 2009Date of Patent: January 10, 2012Assignee: United Microelectronics Corp.Inventors: Chih-Chung Chang, Jian-Chang Lin, Wen-Sheng Wu, Ching-Lin Chang, Chih-Yang Tsai
-
Publication number: 20110151597Abstract: An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not.Type: ApplicationFiled: December 18, 2009Publication date: June 23, 2011Applicant: United Microelectronics Corp.Inventors: Chih-Chung Chang, Jian-Chang Lin, Wen-Sheng Wu, Ching-Lin Chang, Chih-Yang Tsai
-
Publication number: 20100051581Abstract: A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process deposits from the exterior surface of the chamber component.Type: ApplicationFiled: August 26, 2008Publication date: March 4, 2010Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jian-Bin CHIOU, Wen-Cheng Cheng, Wen-Sheng Wu
-
Publication number: 20080078326Abstract: Pre-cleaning tools and semiconductor processing apparatuses using the same are provided. An exemplary pre-cleaning tool comprises a support unit for supporting a substrate, a dome unit for substantially covering the support unit, a first RF unit connected to the support unit and a second RF unit connected to the dome unit. The dome unit is partially ceramic bead-blasted at an inner surface thereof.Type: ApplicationFiled: September 29, 2006Publication date: April 3, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuo-Liang Sung, Wen-Sheng Wu, Victor Chen, Shuen-Liang Tseng
-
Patent number: 6912915Abstract: An apparatus for shear testing bonds on 8? and 12? silicon substrates. The apparatus includes a removable platform for securing the 8? wafer and a vacuum chuck for securing a 12? wafer and the removable platform at the same time. A control module controls a moving mechanism to shift a probe to contact the solder ball of the 12? substrate secured on the vacuum chuck or the solder ball of the 8? wafer on the removable platform when the removable platform is fixed on the vacuum chuck. The moving mechanism moves the probe in a direction to separate the solder ball from the wafer. A sensor measures the pulling force exerted on the probe when the probe is moved in a direction and separates the solder ball from the wafer.Type: GrantFiled: November 21, 2003Date of Patent: July 5, 2005Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yue-Ying Jian, Wen-Sheng Wu, Jien-Ren Chen, Wei-Jen Huang
-
Publication number: 20050109117Abstract: An apparatus for shear testing bonds on 8? and 12? silicon substrates. The apparatus includes a removable platform for securing the 8? wafer and a vacuum chuck for securing a 12? wafer and the removable platform at the same time. A control module controls a moving mechanism to shift a probe to contact the solder ball of the 12? substrate secured on the vacuum chuck or the solder ball of the 8? wafer on the removable platform when the removable platform is fixed on the vacuum chuck. The moving mechanism moves the probe in a direction to separate the solder ball from the wafer. A sensor measures the pulling force exerted on the probe when the probe is moved in a direction and separates the solder ball from the wafer.Type: ApplicationFiled: November 21, 2003Publication date: May 26, 2005Inventors: Yue-Ying Jian, Wen-Sheng Wu, Jien-Ren Chen, Wei-Jen Huang