Abstract: A device includes a gate isolation plug, which further includes a U-shaped layer having a bottom portion and two sidewall portions, and an inner region overlapping the bottom portion. The inner region contacts the two sidewall portions. A first transistor has a first gate stack, and a first end of the first gate stack is in contact with both the inner region and the U-shaped layer of the gate isolation plug. A second transistor has a second gate stack, and a second end of the second gate stack is in contact with both the inner region and the U-shaped layer of the gate isolation plug. The first gate stack and the second gate stack are on opposite sides of the gate isolation plug.

Abstract: An amperometric oxygen sensor for sensing the partial pressure of oxygen is disclosed. The amperometric oxygen sensor having a multilayered body which comprises a plurality of oxygen ion conductor layers interposed between a plurality of oxygen-porous electrode layers. Oxygen from a sample gas enters porous cathode layer of the sensor, through the ion conductor diffuses to anode because of a potential difference, and then an amperometric current is measured, which is proportional to the partial pressure of the oxygen. The amperometric oxygen sensor further comprises a heating member embedded within the sensor body and a heating controller electrically connects with the heating member to heat and maintain the sensor at working temperature, about 500˜800° C. An electrical insulator layer, but not thermal insulator, is blocked between the heating member and the oxygen-porous electrode strips so as to prevent the amperometric current from electromagnetic field interference.